CSD17581Q5A
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Texas Instruments CSD17581Q5A

Manufacturer No:
CSD17581Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 24A/123A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17581Q5A is a high-performance N-channel MOSFET produced by Texas Instruments, designed for applications requiring efficient power management and switching. This product is part of the NexFET™ Power MOSFET family, known for its low on-resistance and high switching speed. The CSD17581Q5A is specifically targeted at power supply, motor control, and load switching applications, making it an ideal choice for industrial, automotive, and consumer electronics. Its compact DFN5x6 package and advanced thermal performance ensure reliability and efficiency in demanding environments.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)60A@ TC = 25°C
On-Resistance (RDS(on))1.7@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)3.3W@ TA = 25°C
Operating Junction Temperature (TJ)-55 to 150°C
PackageDFN5x6

Key Features

  • Low on-resistance (1.7 mΩ) for reduced conduction losses.
  • High continuous drain current (60 A) for robust performance.
  • Optimized for high-speed switching applications.
  • Compact DFN5x6 package for space-constrained designs.
  • Excellent thermal performance for reliable operation in demanding environments.

Applications

The CSD17581Q5A is widely used in various applications, including:

  • Power Supplies: Efficient DC-DC conversion and load switching.
  • Motor Control: High-speed switching for motor drivers.
  • Automotive Systems: Reliable performance in automotive power management.
  • Consumer Electronics: Compact and efficient power solutions for portable devices.

Q & A

1. What is the maximum drain-source voltage for the CSD17581Q5A?

The maximum drain-source voltage (VDS) is 30 V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 1.7 mΩ at VGS = 10V.

3. What is the maximum continuous drain current?

The maximum continuous drain current (ID) is 60 A at TC = 25°C.

4. What package does the CSD17581Q5A use?

It uses the DFN5x6 package.

5. Is this MOSFET suitable for automotive applications?

Yes, it is designed for reliable performance in automotive power management systems.

6. What is the operating junction temperature range?

The operating junction temperature (TJ) ranges from -55°C to 150°C.

7. Can this MOSFET handle high-speed switching?

Yes, it is optimized for high-speed switching applications.

8. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±20 V.

9. What is the power dissipation at 25°C ambient temperature?

The power dissipation (PD) is 3.3 W at TA = 25°C.

10. Is the CSD17581Q5A suitable for portable devices?

Yes, its compact size and efficiency make it ideal for portable consumer electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3640 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD17581Q5A CSD17581Q5AT CSD17501Q5A CSD17551Q5A CSD17581Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 123A (Tc) 24A (Ta), 123A (Tc) 100A (Tc) 48A (Tc) 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 16A, 10V 3.4mOhm @ 16A, 10V 2.9mOhm @ 25A, 10V 8.8mOhm @ 11A, 10V 3.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.7V @ 250µA 1.8V @ 250µA 2.2V @ 250µA 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 54 nC @ 10 V 17 nC @ 4.5 V 7.2 nC @ 4.5 V 54 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 15 V 3640 pF @ 15 V 2630 pF @ 15 V 1272 pF @ 15 V 3640 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 3.1W (Ta), 83W (Tc) 3.1W (Ta), 83W (Tc) 3.2W (Ta) 3W (Ta) 2.8W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerVDFN

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