CSD17581Q3A
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Texas Instruments CSD17581Q3A

Manufacturer No:
CSD17581Q3A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 21A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17581Q3A is a 30-V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This component is designed for high-efficiency power conversion applications, offering low gate charge (Qg) and low on-resistance (RDS(on)). It is targeted at engineers and designers working on power management systems in industries such as automotive, industrial automation, and consumer electronics. Its unique selling points include its compact VSONP-8 package, avalanche-rated durability, and compliance with RoHS and lead-free standards.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)30A@ TC = 25°C
On-Resistance (RDS(on))2.5mΩ@ VGS = 10 V, ID = 30 A
Gate-Source Threshold Voltage (VGS(th))1.8V@ ID = 250 µA
Total Gate Charge (Qg)18nC@ VDS = 15 V, VGS = 10 V
PackageVSONP-8Compact, lead-free
Avalanche Energy (EAS)12mJSingle pulse

Key Features

  • Low gate charge (Qg) and gate-drain charge (Qgd) for improved switching efficiency.
  • Low on-resistance (RDS(on)) minimizes conduction losses.
  • Avalanche-rated for enhanced reliability in rugged environments.
  • RoHS compliant and lead-free, meeting environmental standards.
  • Compact VSONP-8 package for space-constrained designs.

Applications

The CSD17581Q3A is widely used in power management applications, including DC-DC converters, motor drives, and load switches. In automotive systems, it is ideal for battery management and power distribution modules. Industrial applications include power supplies and inverters, while consumer electronics benefit from its efficiency in portable devices and chargers. Its low power dissipation and high reliability make it a preferred choice for modern power systems.

Q & A

1. What is the maximum drain-source voltage of the CSD17581Q3A?

The maximum drain-source voltage is 30 V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 2.5 mΩ at VGS = 10 V and ID = 30 A.

3. Is the CSD17581Q3A RoHS compliant?

Yes, it is RoHS compliant and lead-free.

4. What package does the CSD17581Q3A use?

It uses the compact VSONP-8 package.

5. What is the gate-source threshold voltage?

The gate-source threshold voltage is 1.8 V at ID = 250 µA.

6. Can this MOSFET handle avalanche conditions?

Yes, it is avalanche-rated for enhanced durability.

7. What is the total gate charge of the CSD17581Q3A?

The total gate charge is 18 nC at VDS = 15 V and VGS = 10 V.

8. What are the typical applications of this MOSFET?

Typical applications include DC-DC converters, motor drives, and load switches.

9. What is the continuous drain current rating?

The continuous drain current rating is 30 A at TC = 25°C.

10. Is the CSD17581Q3A suitable for automotive applications?

Yes, it is ideal for automotive systems such as battery management and power distribution.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3640 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number CSD17581Q3A CSD17581Q5A CSD17581Q3AT CSD17551Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta) 24A (Ta), 123A (Tc) 60A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 16A, 10V 3.4mOhm @ 16A, 10V 3.8mOhm @ 16A, 10V 9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.7V @ 250µA 1.7V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 54 nC @ 10 V 54 nC @ 10 V 7.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 15 V 3640 pF @ 15 V 3640 pF @ 15 V 1370 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 2.8W (Ta), 63W (Tc) 3.1W (Ta), 83W (Tc) 2.8W (Ta), 63W (Tc) 2.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3) 8-SON (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN

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