Overview
The CSD17581Q3A is a 30-V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This component is designed for high-efficiency power conversion applications, offering low gate charge (Qg) and low on-resistance (RDS(on)). It is targeted at engineers and designers working on power management systems in industries such as automotive, industrial automation, and consumer electronics. Its unique selling points include its compact VSONP-8 package, avalanche-rated durability, and compliance with RoHS and lead-free standards.
Key Specifications
Parameter | Value | Unit | Notes |
---|---|---|---|
Drain-Source Voltage (VDS) | 30 | V | |
Continuous Drain Current (ID) | 30 | A | @ TC = 25°C |
On-Resistance (RDS(on)) | 2.5 | mΩ | @ VGS = 10 V, ID = 30 A |
Gate-Source Threshold Voltage (VGS(th)) | 1.8 | V | @ ID = 250 µA |
Total Gate Charge (Qg) | 18 | nC | @ VDS = 15 V, VGS = 10 V |
Package | VSONP-8 | Compact, lead-free | |
Avalanche Energy (EAS) | 12 | mJ | Single pulse |
Key Features
- Low gate charge (Qg) and gate-drain charge (Qgd) for improved switching efficiency.
- Low on-resistance (RDS(on)) minimizes conduction losses.
- Avalanche-rated for enhanced reliability in rugged environments.
- RoHS compliant and lead-free, meeting environmental standards.
- Compact VSONP-8 package for space-constrained designs.
Applications
The CSD17581Q3A is widely used in power management applications, including DC-DC converters, motor drives, and load switches. In automotive systems, it is ideal for battery management and power distribution modules. Industrial applications include power supplies and inverters, while consumer electronics benefit from its efficiency in portable devices and chargers. Its low power dissipation and high reliability make it a preferred choice for modern power systems.
Q & A
1. What is the maximum drain-source voltage of the CSD17581Q3A?
The maximum drain-source voltage is 30 V.
2. What is the typical on-resistance of this MOSFET?
The typical on-resistance is 2.5 mΩ at VGS = 10 V and ID = 30 A.
3. Is the CSD17581Q3A RoHS compliant?
Yes, it is RoHS compliant and lead-free.
4. What package does the CSD17581Q3A use?
It uses the compact VSONP-8 package.
5. What is the gate-source threshold voltage?
The gate-source threshold voltage is 1.8 V at ID = 250 µA.
6. Can this MOSFET handle avalanche conditions?
Yes, it is avalanche-rated for enhanced durability.
7. What is the total gate charge of the CSD17581Q3A?
The total gate charge is 18 nC at VDS = 15 V and VGS = 10 V.
8. What are the typical applications of this MOSFET?
Typical applications include DC-DC converters, motor drives, and load switches.
9. What is the continuous drain current rating?
The continuous drain current rating is 30 A at TC = 25°C.
10. Is the CSD17581Q3A suitable for automotive applications?
Yes, it is ideal for automotive systems such as battery management and power distribution.