CSD17551Q3A
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Texas Instruments CSD17551Q3A

Manufacturer No:
CSD17551Q3A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 12A 8SON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17551Q3A is a 30-V, N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed in a compact SON 3.3 mm x 3.3 mm package, making it ideal for applications where space is limited. The MOSFET is engineered to minimize losses in power conversion applications, offering ultra-low on-resistance and low thermal resistance. It is also avalanche rated, Pb-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
On-Resistance (Rds(on))7.8 mΩ
Continuous Drain Current (Id)12 A (at Tc)
Package TypeSON 3.3 mm x 3.3 mm (8-VSONP)
Thermal Resistance (RθJA)60°C/W (minimum pad area of 1 inch^2)
Gate-Source Voltage (Vgs)±20 V
Operating Temperature Range-55°C to 150°C

Key Features

  • Ultra-low on-resistance (Rds(on)) of 7.8 mΩ
  • Low thermal resistance (RθJA) of 60°C/W
  • Avalanche rated for robust operation
  • Pb-free, RoHS compliant, and halogen-free for environmental sustainability
  • Compact SON 3.3 mm x 3.3 mm package for space-efficient designs
  • Ultra-low Qgd (gate-drain charge) for reduced switching losses

Applications

The CSD17551Q3A is suitable for various power conversion applications, including:

  • DC-DC converters (synchronous buck, boost, and buck-boost)
  • Power supplies for PoE (Power over Ethernet) devices
  • Motor drive systems, particularly for BLDC motors
  • High-efficiency synchronous rectifier applications

Q & A

  1. What is the voltage rating of the CSD17551Q3A MOSFET?
    The voltage rating (Vds) of the CSD17551Q3A is 30 V.
  2. What is the on-resistance (Rds(on)) of the CSD17551Q3A?
    The on-resistance (Rds(on)) is 7.8 mΩ.
  3. What is the package type of the CSD17551Q3A?
    The package type is SON 3.3 mm x 3.3 mm (8-VSONP).
  4. Is the CSD17551Q3A environmentally friendly?
    Yes, it is Pb-free, RoHS compliant, and halogen-free.
  5. What are the typical applications for the CSD17551Q3A?
    Typical applications include DC-DC converters, power supplies for PoE devices, motor drive systems, and high-efficiency synchronous rectifier applications.
  6. What is the thermal resistance (RθJA) of the CSD17551Q3A?
    The thermal resistance (RθJA) is 60°C/W when mounted on a minimum pad area of 1 inch^2.
  7. Is the CSD17551Q3A avalanche rated?
    Yes, it is avalanche rated for robust operation.
  8. What is the gate-source voltage (Vgs) rating of the CSD17551Q3A?
    The gate-source voltage (Vgs) rating is ±20 V.
  9. What tools are available for designing with the CSD17551Q3A?
    Tools include MOSFET power loss calculators, SOA calculation tools, and TINA-TI Spice models.
  10. Where can I find detailed technical documentation for the CSD17551Q3A?
    Detailed technical documentation, including datasheets and application notes, can be found on the Texas Instruments website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SON (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number CSD17551Q3A CSD17551Q5A CSD17581Q3A CSD17552Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 48A (Tc) 21A (Ta) 15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 11A, 10V 8.8mOhm @ 11A, 10V 3.8mOhm @ 16A, 10V 6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.2V @ 250µA 1.7V @ 250µA 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V 7.2 nC @ 4.5 V 54 nC @ 10 V 12 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 15 V 1272 pF @ 15 V 3640 pF @ 15 V 2050 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 2.6W (Ta) 3W (Ta) 2.8W (Ta), 63W (Tc) 2.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SON (3.3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3) 8-SON (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN

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