Overview
The CSD17552Q3A is a 30-V N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and high efficiency. It features a compact SON 3.3 mm × 3.3 mm package, making it suitable for space-constrained designs. The MOSFET is Pb-free, RoHS compliant, and halogen-free, aligning with modern environmental standards.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage (VDS) | VGS = 0 V, ID = 250 μA | 30 | V |
| Gate-to-Source Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250 μA | 1.5 | V |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V | ID = 11 A | 6.5 | mΩ |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V | ID = 11 A | 5.5 | mΩ |
| Gate Charge Total (Qg) at 4.5 V | VDS = 15 V, ID = 11 A | 9 | nC |
| Gate Charge Gate-to-Drain (Qgd) | VDS = 15 V, ID = 11 A | 2.3 | nC |
| Junction-to-Ambient Thermal Resistance (RθJA) | Device mounted on FR4 material with 1 inch^2 (6.45 cm^2), 2 oz. (0.071 mm thick) Cu. | 48 | °C/W |
| Continuous Drain Current (ID) at TC = 25°C | 15 | A | |
| Pulsed Drain Current (IDM) at TA = 25°C | Pulse duration ≤300 μs, duty cycle ≤2% | 84 | A |
Key Features
- Ultra-low Qg and Qgd for efficient switching.
- Low thermal resistance, enhancing heat dissipation.
- Avalanche rated, providing robustness against transient conditions.
- Pb-free, RoHS compliant, and halogen-free, ensuring environmental compliance.
- Compact SON 3.3 mm × 3.3 mm package for space-saving designs.
Applications
The CSD17552Q3A is suitable for various high-performance applications, including:
- Point-of-Load synchronous buck converters in networking, telecom, and computing systems.
- Power management in high-efficiency DC-DC converters.
- Switching power supplies requiring low on-state resistance and high current handling.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD17552Q3A?
The maximum drain-to-source voltage (VDS) is 30 V. - What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
The typical on-state resistance (RDS(on)) at VGS = 10 V is 5.5 mΩ. - What is the gate charge total (Qg) at 4.5 V?
The gate charge total (Qg) at 4.5 V is 9 nC. - What is the junction-to-ambient thermal resistance (RθJA) of the device?
The junction-to-ambient thermal resistance (RθJA) is 48 °C/W when mounted on a 1 inch^2 (6.45 cm^2), 2 oz. (0.071 mm thick) Cu pad. - What are the environmental compliance standards of the CSD17552Q3A?
The device is Pb-free, RoHS compliant, and halogen-free. - What is the package type and dimensions of the CSD17552Q3A?
The device is packaged in a SON 3.3 mm × 3.3 mm plastic package. - What are the typical applications of the CSD17552Q3A?
The device is typically used in point-of-load synchronous buck converters, power management in high-efficiency DC-DC converters, and switching power supplies. - What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 15 A. - What is the pulsed drain current (IDM) at TA = 25°C?
The pulsed drain current (IDM) at TA = 25°C is 84 A for pulse durations ≤300 μs and duty cycles ≤2%. - Is the CSD17552Q3A avalanche rated?
Yes, the CSD17552Q3A is avalanche rated, providing robustness against transient conditions.
