CSD17552Q3A
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Texas Instruments CSD17552Q3A

Manufacturer No:
CSD17552Q3A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 15A/60A 8SON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17552Q3A is a 30-V N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and high efficiency. It features a compact SON 3.3 mm × 3.3 mm package, making it suitable for space-constrained designs. The MOSFET is Pb-free, RoHS compliant, and halogen-free, aligning with modern environmental standards.

Key Specifications

ParameterTest ConditionsTypical ValueUnit
Drain-to-Source Voltage (VDS)VGS = 0 V, ID = 250 μA30V
Gate-to-Source Threshold Voltage (VGS(th))VDS = VGS, ID = 250 μA1.5V
Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 VID = 11 A6.5mΩ
Drain-to-Source On Resistance (RDS(on)) at VGS = 10 VID = 11 A5.5mΩ
Gate Charge Total (Qg) at 4.5 VVDS = 15 V, ID = 11 A9nC
Gate Charge Gate-to-Drain (Qgd)VDS = 15 V, ID = 11 A2.3nC
Junction-to-Ambient Thermal Resistance (RθJA)Device mounted on FR4 material with 1 inch^2 (6.45 cm^2), 2 oz. (0.071 mm thick) Cu.48°C/W
Continuous Drain Current (ID) at TC = 25°C15A
Pulsed Drain Current (IDM) at TA = 25°CPulse duration ≤300 μs, duty cycle ≤2%84A

Key Features

  • Ultra-low Qg and Qgd for efficient switching.
  • Low thermal resistance, enhancing heat dissipation.
  • Avalanche rated, providing robustness against transient conditions.
  • Pb-free, RoHS compliant, and halogen-free, ensuring environmental compliance.
  • Compact SON 3.3 mm × 3.3 mm package for space-saving designs.

Applications

The CSD17552Q3A is suitable for various high-performance applications, including:

  • Point-of-Load synchronous buck converters in networking, telecom, and computing systems.
  • Power management in high-efficiency DC-DC converters.
  • Switching power supplies requiring low on-state resistance and high current handling.

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD17552Q3A?
    The maximum drain-to-source voltage (VDS) is 30 V.
  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
    The typical on-state resistance (RDS(on)) at VGS = 10 V is 5.5 mΩ.
  3. What is the gate charge total (Qg) at 4.5 V?
    The gate charge total (Qg) at 4.5 V is 9 nC.
  4. What is the junction-to-ambient thermal resistance (RθJA) of the device?
    The junction-to-ambient thermal resistance (RθJA) is 48 °C/W when mounted on a 1 inch^2 (6.45 cm^2), 2 oz. (0.071 mm thick) Cu pad.
  5. What are the environmental compliance standards of the CSD17552Q3A?
    The device is Pb-free, RoHS compliant, and halogen-free.
  6. What is the package type and dimensions of the CSD17552Q3A?
    The device is packaged in a SON 3.3 mm × 3.3 mm plastic package.
  7. What are the typical applications of the CSD17552Q3A?
    The device is typically used in point-of-load synchronous buck converters, power management in high-efficiency DC-DC converters, and switching power supplies.
  8. What is the continuous drain current (ID) at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is 15 A.
  9. What is the pulsed drain current (IDM) at TA = 25°C?
    The pulsed drain current (IDM) at TA = 25°C is 84 A for pulse durations ≤300 μs and duty cycles ≤2%.
  10. Is the CSD17552Q3A avalanche rated?
    Yes, the CSD17552Q3A is avalanche rated, providing robustness against transient conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SON (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number CSD17552Q3A CSD17552Q5A CSD17551Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 60A (Tc) 17A (Ta), 60A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 11A, 10V 6.2mOhm @ 15A, 10V 9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250µA 1.9V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 12 nC @ 4.5 V 7.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 15 V 2050 pF @ 15 V 1370 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.6W (Ta) 3W (Ta) 2.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SON (3.3x3.3) 8-VSONP (5x6) 8-SON (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN

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