CSD17581Q3AT
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Texas Instruments CSD17581Q3AT

Manufacturer No:
CSD17581Q3AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 60A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17581Q3AT is a high-performance N-channel MOSFET produced by Texas Instruments, designed for efficient power management in a variety of applications. This product belongs to the NexFET™ Power MOSFET series, known for its low on-resistance and high switching speed. It is specifically targeted at applications requiring high efficiency and thermal performance, such as power supplies, motor drives, and DC-DC converters. The CSD17581Q3AT stands out for its compact DFN (Dual Flat No-Lead) package, which enhances thermal dissipation and reduces board space, making it an ideal choice for modern, space-constrained designs.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30VMaximum voltage
Continuous Drain Current (ID)60AAt 25°C
On-Resistance (RDS(on))1.8At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum voltage
Power Dissipation (PD)2.5WAt 25°C
PackageDFN-8 (3x3)-Compact, space-saving
Operating Temperature Range-55 to 150°CWide range for versatility

Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency.
  • High Switching Speed: Enhances performance in high-frequency applications.
  • Compact DFN Package: Reduces board space and improves thermal performance.
  • Wide Operating Temperature Range: Suitable for demanding environments.
  • Robust Design: Ensures reliability in high-power applications.

Applications

The CSD17581Q3AT is widely used in various high-efficiency power management applications. Its primary applications include:

  • Power Supplies: Enhances efficiency in AC-DC and DC-DC converters.
  • Motor Drives: Provides reliable switching for motor control systems.
  • Battery Management Systems: Ensures efficient power delivery in portable devices.
  • LED Lighting: Supports high-efficiency drivers for LED applications.
  • Automotive Electronics: Meets the stringent requirements of automotive power systems.

Q & A

1. What is the maximum drain-source voltage of the CSD17581Q3AT?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 1.8 mΩ at VGS = 10V.

3. What package does the CSD17581Q3AT use?

It uses a compact DFN-8 (3x3) package.

4. What is the continuous drain current rating?

The continuous drain current (ID) is 60A at 25°C.

5. Is this MOSFET suitable for high-frequency applications?

Yes, its high switching speed makes it ideal for high-frequency applications.

6. What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

7. Can the CSD17581Q3AT be used in automotive applications?

Yes, it is suitable for automotive electronics due to its robust design.

8. What are the key advantages of the DFN package?

The DFN package offers reduced board space and improved thermal performance.

9. How does the low on-resistance benefit applications?

Low on-resistance minimizes conduction losses, improving overall efficiency.

10. Is this MOSFET suitable for battery management systems?

Yes, it is ideal for battery management systems due to its efficiency and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3640 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number CSD17581Q3AT CSD17581Q5AT CSD17581Q3A
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 24A (Ta), 123A (Tc) 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 16A, 10V 3.4mOhm @ 16A, 10V 3.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.7V @ 250µA 1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 54 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 15 V 3640 pF @ 15 V 3640 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.8W (Ta), 63W (Tc) 3.1W (Ta), 83W (Tc) 2.8W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (3x3.3) 8-VSONP (5x6) 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN

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