BC857BQCZ
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Nexperia USA Inc. BC857BQCZ

Manufacturer No:
BC857BQCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BQCZ is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857XQC series and is designed for a wide range of applications, including general-purpose switching and amplification. It is packaged in the DFN1412D-3 (SOT8009) package, which is a small, leadless ultra small outline package with side-wettable flanks (SWF), making it ideal for space-constrained designs.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) V CEO [max] (V) I C [max] (mA) h FE [min] h FE [max] T J [max] (°C) f T [min] (MHz) Automotive qualified
BC857BQC SOT8009 DFN1412D-3 1.4 x 1.2 x 0.48 PNP 360.0 -45.0 -100.0 220.0 475.0 150 100.0 N

Key Features

  • Low Current Capability: Maximum collector current of 100 mA.
  • Low Voltage Capability: Maximum collector-emitter voltage of 45 V.
  • High Current Gain: Minimum current gain (hFE) of 220 and maximum of 475.
  • High Transition Frequency: Minimum transition frequency of 100 MHz.
  • Compact Package: DFN1412D-3 (SOT8009) package, which is a small, leadless ultra small outline package with side-wettable flanks (SWF).
  • Automotive Qualified: Although not specifically qualified for automotive use in this package, the BC857 series is known for its reliability and can be considered for demanding applications.

Applications

  • General-Purpose Switching and Amplification: Suitable for a variety of switching and amplification applications due to its high current gain and low voltage capabilities.
  • Consumer Electronics: Used in consumer electronic devices such as audio equipment, home appliances, and other electronic gadgets.
  • Industrial Automation: Can be used in industrial control systems, sensors, and other automation equipment.
  • Automotive Systems: Although not specifically qualified for automotive use in this package, similar transistors in the series are used in automotive applications due to their reliability and performance.

Q & A

  1. What is the maximum collector current of the BC857BQCZ transistor?

    The maximum collector current is 100 mA.

  2. What is the maximum collector-emitter voltage of the BC857BQCZ transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What is the package type of the BC857BQCZ transistor?

    The transistor is packaged in the DFN1412D-3 (SOT8009) package.

  4. What are the dimensions of the DFN1412D-3 package?

    The dimensions are 1.4 x 1.2 x 0.48 mm.

  5. What is the minimum current gain (hFE) of the BC857BQCZ transistor?

    The minimum current gain is 220.

  6. What is the maximum junction temperature of the BC857BQCZ transistor?

    The maximum junction temperature is 150°C.

  7. Is the BC857BQCZ transistor automotive qualified?

    No, the BC857BQCZ is not specifically qualified for automotive use in this package, but similar transistors in the series are qualified according to AEC-Q101.

  8. What is the transition frequency of the BC857BQCZ transistor?

    The minimum transition frequency is 100 MHz.

  9. How can I obtain samples of the BC857BQCZ transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

  10. What are some common applications of the BC857BQCZ transistor?

    It is used in general-purpose switching and amplification, consumer electronics, industrial automation, and similar applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:850mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC857BQCZ BC857CQCZ BC857AQCZ BC857BQAZ BC857BQBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc.
Product Status Active Active Active Active Obsolete
Transistor Type PNP PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 850mV @ 5mA, 100mA 850mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 360 mW 360 mW 360 mW 280 mW 340 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3 DFN1412D-3 DFN1010D-3 DFN1110D-3

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