Overview
The BC807-25B5000 is a PNP silicon AF (Audio Frequency) transistor array produced by Infineon Technologies. This component is designed for general AF applications, including input stages and driver circuits. It features high collector current, high current gain, and low collector-emitter saturation voltage, making it suitable for a variety of audio and signal processing tasks. The transistor array is packaged in a Pb-free (RoHS compliant) SOT23 package and is qualified according to AEC Q101 standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Continuous Collector Current | IC | 500 mA | mA |
| Peak Collector Current (tp ≤ 10 ms) | ICM | 1000 mA | mA |
| Base Current | IB | 100 mA | mA |
| Peak Base Current (tp ≤ 10 ms) | IBM | 200 mA | mA |
| Total Power Dissipation (TS ≤ 115 °C) | Ptot | 330 mW | mW |
| Junction Temperature | Tj | 150 °C | °C |
| Storage Temperature | Tstg | -65 to 150 °C | °C |
| DC Current Gain (hFE) at IC = 100 mA, VCE = 1 V | hFE | 160 - 400 | - |
| Collector-Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VCEsat | 0.7 V | V |
| Base-Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VBEsat | 1.2 V | V |
| Transition Frequency at IC = 50 mA, VCE = 5 V, f = 100 MHz | fT | 200 MHz | MHz |
Key Features
- High collector current up to 500 mA
- High current gain (hFE) ranging from 160 to 400
- Low collector-emitter saturation voltage (VCEsat) of 0.7 V
- Low base-emitter saturation voltage (VBEsat) of 1.2 V
- Pb-free (RoHS compliant) SOT23 package
- Qualified according to AEC Q101 standards
- Complementary NPN types available (BC817)
- Ideal for AF input stages and driver applications
- Good matching of transistors within the package
Applications
- Audio frequency (AF) applications
- Input stages and driver circuits
- Switching and amplifier circuits
- Automotive and industrial electronics where high reliability is required
- General purpose transistor applications requiring high current gain and low saturation voltages
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC807-25B5000?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the continuous collector current (IC) rating of this transistor?
The continuous collector current (IC) rating is 500 mA.
- What is the typical DC current gain (hFE) of the BC807-25B5000?
The typical DC current gain (hFE) ranges from 160 to 400 at IC = 100 mA and VCE = 1 V.
- What is the collector-emitter saturation voltage (VCEsat) of this transistor?
The collector-emitter saturation voltage (VCEsat) is 0.7 V at IC = 500 mA and IB = 50 mA.
- Is the BC807-25B5000 Pb-free and RoHS compliant?
Yes, the BC807-25B5000 is Pb-free and RoHS compliant.
- What are the storage temperature limits for the BC807-25B5000?
The storage temperature range is from -65 °C to 150 °C.
- What is the transition frequency (fT) of this transistor?
The transition frequency (fT) is 200 MHz at IC = 50 mA, VCE = 5 V, and f = 100 MHz.
- Are there complementary NPN types available for the BC807-25B5000?
Yes, the complementary NPN types are available as BC817.
- What is the package type of the BC807-25B5000?
The package type is SOT23.
- What are the typical applications of the BC807-25B5000?
The typical applications include AF input stages, driver circuits, switching, and amplifier circuits.
