NTMFD4C86NT3G
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onsemi NTMFD4C86NT3G

Manufacturer No:
NTMFD4C86NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 11.3/18.1A 8DFN
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The NTMFD4C86NT3G is a dual N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by onsemi. This component is configured as an asymmetrical dual N-Channel MOSFET, packaged in an SO8FL package. However, it is important to note that the NTMFD4C86NT3G is currently obsolete and no longer manufactured by onsemi.

Key Specifications

Parameter Value
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 30V
Package SO8FL

Key Features

  • Dual N-Channel MOSFET configuration, allowing for two separate channels in a single package.
  • Asymmetrical configuration, which can be beneficial for specific circuit designs requiring different characteristics for each channel.
  • Maximum drain to source voltage (Vdss) of 30V, making it suitable for a variety of power management and switching applications.
  • Compact SO8FL package, which is space-efficient and suitable for dense PCB designs.

Applications

The NTMFD4C86NT3G MOSFET is suitable for various applications including power management, switching circuits, and general-purpose amplification. It can be used in:

  • Power supplies and DC-DC converters.
  • Motor control and drive circuits.
  • Audio and general-purpose amplifiers.
  • Other electronic circuits requiring dual N-Channel MOSFETs.

Q & A

  1. What is the NTMFD4C86NT3G?

    The NTMFD4C86NT3G is a dual N-Channel MOSFET produced by onsemi.

  2. What is the configuration of the NTMFD4C86NT3G?

    The NTMFD4C86NT3G is configured as an asymmetrical dual N-Channel MOSFET.

  3. What is the maximum drain to source voltage (Vdss) of the NTMFD4C86NT3G?

    The maximum drain to source voltage (Vdss) is 30V.

  4. What package type is the NTMFD4C86NT3G available in?

    The NTMFD4C86NT3G is packaged in an SO8FL package.

  5. Is the NTMFD4C86NT3G still in production?

    No, the NTMFD4C86NT3G is currently obsolete and no longer manufactured by onsemi.

  6. What are some common applications for the NTMFD4C86NT3G?

    Common applications include power management, switching circuits, motor control, and general-purpose amplification.

  7. What are the benefits of the asymmetrical configuration of the NTMFD4C86NT3G?

    The asymmetrical configuration allows for different characteristics for each channel, which can be beneficial for specific circuit designs.

  8. Can I still find the NTMFD4C86NT3G for purchase?

    Although the NTMFD4C86NT3G is obsolete, you may still find it through some distributors or as part of existing inventory. However, it is recommended to look for substitutes.

  9. What substitutes are available for the NTMFD4C86NT3G?

    Substitutes such as the HP8KA1TB from Rohm Semiconductor may be considered as alternatives.

  10. Why is the SO8FL package beneficial?

    The SO8FL package is compact and space-efficient, making it suitable for dense PCB designs.

Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:11.3A, 18.1A
Rds On (Max) @ Id, Vgs:5.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1153pF @ 15V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
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In Stock

$2.36
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Same Series
NTMFD4C86NT3G
NTMFD4C86NT3G
MOSFET 2N-CH 30V 11.3/18.1A 8DFN

Similar Products

Part Number NTMFD4C86NT3G NTMFD4C87NT3G NTMFD4C88NT3G NTMFD4C85NT3G NTMFD4C86NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Standard Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 30V 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 11.3A, 18.1A 11.7A, 14.9A 11.7A, 14.2A 15.4A, 29.7A 11.3A, 18.1A
Rds On (Max) @ Id, Vgs 5.4mOhm @ 30A, 10V 5.4mOhm @ 30A, 10V 5.4mOhm @ 10A, 10V 3mOhm @ 20A, 10V 5.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V 22.2nC @ 10V 22.2nC @ 10V 32nC @ 10V 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1153pF @ 15V 1252pF @ 15V 1252pF @ 15V 1960pF @ 15V 1153pF @ 15V
Power - Max 1.1W 1.1W 1.1W 1.13W 1.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6) 8-DFN (5x6)

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