FDMQ8203
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onsemi FDMQ8203

Manufacturer No:
FDMQ8203
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N/2P-CH 100V/80V 12-MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMQ8203 is a quad MOSFET solution developed by ON Semiconductor, now known as onsemi. This component is part of the GreenBridge™ family and is designed to provide significant improvements in power dissipation compared to traditional diode bridges. It is particularly suited for applications requiring efficient power management and high reliability.

Key Specifications

Parameter Value Remark
Part Number FDMQ8203
BVDSS (V) 100 (Q1, Q4), -80 (Q2, Q3)
RDS(ON) [mΩ] 175 at 6 VGS (Q1, Q4), 235 at 4.5 VGS (Q2, Q3)
Qg [nC] 1.8 at 5 VGS (Q1, Q4), 6.8 at 4.5 VGS (Q2, Q3)
COSS [pF] 47 (Q1, Q4), 49 (Q2, Q3)

Key Features

  • Quad MOSFET Configuration: The FDMQ8203 features a quad P&N-channel MOSFET configuration, enhancing power dissipation and efficiency.
  • High Voltage Rating: The component has a high voltage rating of up to 100V for the P-channel MOSFETs and -80V for the N-channel MOSFETs.
  • Low On-Resistance: It offers low on-resistance values, contributing to reduced power losses and improved thermal performance.
  • Compact Design: Part of the GreenBridge™ family, it is designed for compact and efficient power management solutions.

Applications

  • Power Over Ethernet (PoE): The FDMQ8203 is often used in PoE applications, particularly in evaluation kits and boards that require efficient rectification and regulation of power from Power Source Equipment (PSE).
  • DC-DC Converters: It is suitable for flyback DC-DC converters, where high efficiency and reliability are crucial.
  • Industrial and Automotive Systems: The component can be used in various industrial and automotive applications requiring robust and efficient power management.

Q & A

  1. What is the FDMQ8203?

    The FDMQ8203 is a quad MOSFET solution from onsemi, designed for efficient power management and high reliability.

  2. What are the key specifications of the FDMQ8203?

    The key specifications include a BVDSS of 100V and -80V, RDS(ON) of 175mΩ and 235mΩ, Qg of 1.8nC and 6.8nC, and COSS of 47pF and 49pF.

  3. What are the main features of the FDMQ8203?

    The main features include a quad MOSFET configuration, high voltage rating, low on-resistance, and compact design.

  4. What are the typical applications of the FDMQ8203?

    Typical applications include Power Over Ethernet (PoE), DC-DC converters, and various industrial and automotive systems.

  5. How does the FDMQ8203 improve power dissipation?

    The FDMQ8203 provides a ten-fold improvement in power dissipation over traditional diode bridges.

  6. What is the switching frequency in typical PoE applications?

    The switching frequency in typical PoE applications using the FDMQ8203 is 250 kHz, adjustable by capacitor settings.

  7. What is the maximum output current supported by the FDMQ8203 in PoE applications?

    The maximum output current is 5 A, limited by the power components used in the application.

  8. How does the FDMQ8203 compare to diode bridges in terms of thermal performance?

    The FDMQ8203 shows significantly better thermal performance compared to diode bridges, with lower operating temperatures under similar load conditions.

  9. What kind of evaluation kits are available for the FDMQ8203?

    Evaluation kits such as the MLP 4.5x5 GreenBridge™ MOSFET evaluation board are available to support the development and testing of applications using the FDMQ8203.

  10. What are the safety considerations when using the FDMQ8203?

    Users should ensure that the component is used within its specified ratings and follow proper safety guidelines to avoid any potential risks or damages.

Product Attributes

FET Type:2 N and 2 P-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V, 80V
Current - Continuous Drain (Id) @ 25°C:3.4A, 2.6A
Rds On (Max) @ Id, Vgs:110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:210pF @ 50V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:12-WDFN Exposed Pad
Supplier Device Package:12-MLP (5x4.5)
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Similar Products

Part Number FDMQ8203 FDMQ8403
Manufacturer onsemi onsemi
Product Status Active Active
FET Type 2 N and 2 P-Channel (Half Bridge) 4 N-Channel (Half Bridge)
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 100V, 80V 100V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.6A 3.1A
Rds On (Max) @ Id, Vgs 110mOhm @ 3A, 10V 110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V 215pF @ 15V
Power - Max 2.5W 1.9W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 12-WDFN Exposed Pad 12-WDFN Exposed Pad
Supplier Device Package 12-MLP (5x4.5) 12-MLP (5x4.5)

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