CSD87502Q2T
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Texas Instruments CSD87502Q2T

Manufacturer No:
CSD87502Q2T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 5A 6WSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD87502Q2T is a 30 V, N-channel NexFET™ power MOSFET produced by Texas Instruments. This device features dual independent MOSFETs packaged in a space-saving SON 2 x 2 mm plastic package. It is designed for use in half-bridge configurations for synchronous buck and other power supply applications. The CSD87502Q2T is optimized for 5 V gate drivers and offers low drain-to-source on-resistance, making it suitable for applications where minimal losses and compact design are crucial.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDS)30V
Drain-to-Source On-Resistance (RDS(on)) at VGS = 3.8 V42.0 mΩ
Drain-to-Source On-Resistance (RDS(on)) at VGS = 4.5 V35.5 mΩ
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V27.0 mΩ
Continuous Drain Current (ID)5.0 AA
Pulsed Drain Current (IDM)23 AA
Power Dissipation (PD)2.3 WW
Operating Junction Temperature (TJ)-55 to 150 °C°C
Gate-to-Source Threshold Voltage (VGS(th))1.2 to 2.0 VV
Gate Charge Total (Qg) at VGS = 4.5 V2.2 nCnC
Junction-to-Ambient Thermal Resistance (RθJA)70 °C/W (typical)°C/W

Key Features

  • Low On-Resistance: Minimizes losses and enhances efficiency.
  • Dual Independent MOSFETs: Designed for half-bridge configurations in synchronous buck and other power supply applications.
  • Space Saving SON 2 x 2 mm Plastic Package: Ideal for space-constrained applications.
  • Optimized for 5 V Gate Driver: Ensures compatibility with standard gate drive voltages.
  • Avalanche Rated: Provides robustness against transient conditions.
  • Pb and Halogen Free: Compliant with environmental regulations.
  • RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances directive.

Applications

  • Point-of-Load Synchronous Buck Converters: Suitable for networking, telecom, and computing systems.
  • Adaptor and USB Input Protection: Used in notebook PCs and tablets.
  • Battery Charging: Ideal for battery protection and charging circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the CSD87502Q2T?
    The maximum drain-to-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance of the CSD87502Q2T at VGS = 4.5 V?
    The typical on-resistance (RDS(on)) at VGS = 4.5 V is 35.5 mΩ.
  3. What is the continuous drain current rating of the CSD87502Q2T?
    The continuous drain current (ID) is 5.0 A.
  4. Is the CSD87502Q2T RoHS compliant?
    Yes, the CSD87502Q2T is RoHS compliant.
  5. What is the operating junction temperature range of the CSD87502Q2T?
    The operating junction temperature (TJ) range is -55 to 150 °C.
  6. What type of package does the CSD87502Q2T come in?
    The CSD87502Q2T comes in a SON 2 x 2 mm plastic package.
  7. What are some common applications of the CSD87502Q2T?
    Common applications include point-of-load synchronous buck converters, adaptor and USB input protection, and battery charging.
  8. Is the CSD87502Q2T optimized for a specific gate drive voltage?
    Yes, it is optimized for a 5 V gate driver.
  9. What is the typical junction-to-ambient thermal resistance of the CSD87502Q2T?
    The typical junction-to-ambient thermal resistance (RθJA) is 70 °C/W.
  10. Does the CSD87502Q2T feature avalanche rating?
    Yes, the CSD87502Q2T is avalanche rated.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5A
Rds On (Max) @ Id, Vgs:32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:353pF @ 15V
Power - Max:2.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-WDFN Exposed Pad
Supplier Device Package:6-WSON (2x2)
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Similar Products

Part Number CSD87502Q2T CSD87502Q2
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate, 5V Drive Standard
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 5A 5A
Rds On (Max) @ Id, Vgs 32.4mOhm @ 4A, 10V 32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 353pF @ 15V 353pF @ 15V
Power - Max 2.3W 2.3W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2)

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