Overview
The PSMN4R8-100BSE is a standard level N-channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's 'NextPower Live' portfolio and is packaged in a D2PAK (SOT404) package, qualified to operate at temperatures up to 175 °C. It is designed to offer robust performance, particularly in applications requiring low on-resistance and high efficiency.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 100 V |
| RDS(on) (On-Resistance) | 4.8 mΩ |
| VGS(th) (Threshold Voltage) | 1.5 - 3.5 V |
| ID (Continuous Drain Current) | 60 A |
| Tj (Junction Temperature) | -55 to 175 °C |
| Package | D2PAK (SOT404) |
Key Features
- Very low RDS(on) for low conduction losses.
- Enhanced forward biased safe operating area for superior linear mode operation.
- Robust enough to withstand substantial inrush currents during turn-on.
- Ideal for hot-swap, load switch, and soft start applications.
- Qualified to 175 °C, making it suitable for high-temperature environments.
Applications
The PSMN4R8-100BSE is suitable for various applications, including:
- Telecommunication systems, particularly those based on a 48 V backplane or supply rail.
- Hot-swap and load switch applications.
- Electronic fuse and soft start circuits.
- Industrial and automotive systems requiring high efficiency and reliability.
Q & A
- What is the maximum drain-source voltage of the PSMN4R8-100BSE?
The maximum drain-source voltage (VDS) is 100 V. - What is the on-resistance (RDS(on)) of this MOSFET?
The on-resistance (RDS(on)) is 4.8 mΩ. - What is the package type of the PSMN4R8-100BSE?
The package type is D2PAK (SOT404). - What are the typical applications for this MOSFET?
Typical applications include telecommunication systems, hot-swap, load switch, electronic fuse, and soft start circuits. - What is the maximum junction temperature for this component?
The maximum junction temperature (Tj) is 175 °C. - Is the PSMN4R8-100BSE suitable for high-temperature environments?
Yes, it is qualified to operate at temperatures up to 175 °C. - What is the continuous drain current (ID) of this MOSFET?
The continuous drain current (ID) is 60 A. - Does the PSMN4R8-100BSE have enhanced safe operating area characteristics?
Yes, it has an enhanced forward biased safe operating area for superior linear mode operation. - Can the PSMN4R8-100BSE withstand substantial inrush currents?
Yes, it is robust enough to withstand substantial inrush currents during turn-on. - Where can I find more detailed specifications and models for this component?
You can find detailed specifications, Spice models, and thermal models on Nexperia's official website and other authorized distributors.
