2N7002DWS-7
  • Share:

Diodes Incorporated 2N7002DWS-7

Manufacturer No:
2N7002DWS-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET BVDSS: 41V-60V SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWS-7 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for high-efficiency power management applications. The MOSFET is packaged in an ultra-small surface mount package, specifically the SC-70-6 or SOT-363, and is fully RoHS compliant, halogen-free, and antimony-free.

Key Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
Drain-Source Breakdown VoltageBVDSS6070VVGS = 0V, ID = 10µA
Gate Threshold VoltageVGS(TH)1.02.0VVDS = VGS, ID = 250µA
Static Drain-Source On-ResistanceRDS(ON)7.5ΩVGS = 5V, ID = 0.05A
On-State Drain CurrentID(ON)0.23AVGS = 10V, VDS = 7.5V
Input CapacitanceCiss50pFVDS = 25V, VGS = 0V, f = 1.0MHz
Operating TemperatureTJ-55150°C
PackageSC-70-6, SOT-363

Key Features

  • Dual N-channel MOSFET
  • Low on-state resistance (RDS(ON))
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free

Applications

  • Motor control
  • Power management functions

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002DWS-7?
    The drain-source breakdown voltage (BVDSS) is 60V to 70V.
  2. What is the gate threshold voltage range for this MOSFET?
    The gate threshold voltage (VGS(TH)) ranges from 1.0V to 2.0V.
  3. What is the maximum on-state drain current for this device?
    The maximum on-state drain current (ID(ON)) is 0.23A at VGS = 10V and VDS = 7.5V.
  4. What is the typical input capacitance of the 2N7002DWS-7?
    The input capacitance (Ciss) is typically up to 50pF at VDS = 25V and VGS = 0V.
  5. What are the operating temperature ranges for this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. Is the 2N7002DWS-7 RoHS compliant?
    Yes, the 2N7002DWS-7 is fully RoHS compliant, halogen-free, and antimony-free.
  7. What are the common applications of the 2N7002DWS-7?
    Common applications include motor control and power management functions.
  8. What package types are available for the 2N7002DWS-7?
    The device is available in SC-70-6 and SOT-363 packages.
  9. What is the maximum power dissipation for this MOSFET?
    The maximum power dissipation is 200mW.
  10. Is the 2N7002DWS-7 suitable for automotive applications?
    For automotive applications, please refer to the related automotive grade (Q-suffix) part.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:247mA (Ta)
Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:41pF @ 25V
Power - Max:290mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.09
7,471

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number 2N7002DWS-7 2N7002DW-7 2N7002DWA-7 2N7002DWK-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 247mA (Ta) 230mA 180mA 261mA (Ta)
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 10V 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V - 0.87nC @ 10V 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 25V 50pF @ 25V 22pF @ 25V 41pF @ 30V
Power - Max 290mW (Ta) 310mW 300mW 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

NTMFD4C20NT1G
NTMFD4C20NT1G
onsemi
MOSFET 2N-CH 30V SO8FL
2N7002DW-7-F
2N7002DW-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT-363
BUK7K17-60EX
BUK7K17-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 30A 56LFPAK
NTZD3155CT1G
NTZD3155CT1G
onsemi
MOSFET N/P-CH 20V SOT-563
FDC6327C
FDC6327C
onsemi
MOSFET N/P-CH 20V SSOT-6
FDC6420C
FDC6420C
onsemi
MOSFET N/P-CH 20V 3A/2.2A SSOT-6
CSD87502Q2
CSD87502Q2
Texas Instruments
MOSFET 2N-CH 30V 5A 6WSON
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
BUK9K35-60E,115
BUK9K35-60E,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 22A LFPAK56D
2N7002DW L6327
2N7002DW L6327
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
EFC6604R-TR
EFC6604R-TR
onsemi
MOSFET 2N-CH 6EFCP
FDG6332C-PG
FDG6332C-PG
onsemi
MOSFET N P-CH 20V SC70-6

Related Product By Brand

MURS140-13-F
MURS140-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAT54LP-7B
BAT54LP-7B
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA 2DFN
MUR160-T
MUR160-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84C12W-7-F
BZX84C12W-7-F
Diodes Incorporated
DIODE ZENER 12V 200MW SOT323
BZX84C47Q-7-F
BZX84C47Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C15W-7
BZX84C15W-7
Diodes Incorporated
DIODE ZENER 15V 200MW SOT323
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BSS123TC
BSS123TC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74HC04T14-13
74HC04T14-13
Diodes Incorporated
IC INVERTER 6CH 1-INP 14TSSOP