2N7002DWS-7
  • Share:

Diodes Incorporated 2N7002DWS-7

Manufacturer No:
2N7002DWS-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET BVDSS: 41V-60V SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWS-7 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for high-efficiency power management applications. The MOSFET is packaged in an ultra-small surface mount package, specifically the SC-70-6 or SOT-363, and is fully RoHS compliant, halogen-free, and antimony-free.

Key Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
Drain-Source Breakdown VoltageBVDSS6070VVGS = 0V, ID = 10µA
Gate Threshold VoltageVGS(TH)1.02.0VVDS = VGS, ID = 250µA
Static Drain-Source On-ResistanceRDS(ON)7.5ΩVGS = 5V, ID = 0.05A
On-State Drain CurrentID(ON)0.23AVGS = 10V, VDS = 7.5V
Input CapacitanceCiss50pFVDS = 25V, VGS = 0V, f = 1.0MHz
Operating TemperatureTJ-55150°C
PackageSC-70-6, SOT-363

Key Features

  • Dual N-channel MOSFET
  • Low on-state resistance (RDS(ON))
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free

Applications

  • Motor control
  • Power management functions

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002DWS-7?
    The drain-source breakdown voltage (BVDSS) is 60V to 70V.
  2. What is the gate threshold voltage range for this MOSFET?
    The gate threshold voltage (VGS(TH)) ranges from 1.0V to 2.0V.
  3. What is the maximum on-state drain current for this device?
    The maximum on-state drain current (ID(ON)) is 0.23A at VGS = 10V and VDS = 7.5V.
  4. What is the typical input capacitance of the 2N7002DWS-7?
    The input capacitance (Ciss) is typically up to 50pF at VDS = 25V and VGS = 0V.
  5. What are the operating temperature ranges for this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. Is the 2N7002DWS-7 RoHS compliant?
    Yes, the 2N7002DWS-7 is fully RoHS compliant, halogen-free, and antimony-free.
  7. What are the common applications of the 2N7002DWS-7?
    Common applications include motor control and power management functions.
  8. What package types are available for the 2N7002DWS-7?
    The device is available in SC-70-6 and SOT-363 packages.
  9. What is the maximum power dissipation for this MOSFET?
    The maximum power dissipation is 200mW.
  10. Is the 2N7002DWS-7 suitable for automotive applications?
    For automotive applications, please refer to the related automotive grade (Q-suffix) part.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:247mA (Ta)
Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:41pF @ 25V
Power - Max:290mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.09
7,471

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number 2N7002DWS-7 2N7002DW-7 2N7002DWA-7 2N7002DWK-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 247mA (Ta) 230mA 180mA 261mA (Ta)
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 10V 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V - 0.87nC @ 10V 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 25V 50pF @ 25V 22pF @ 25V 41pF @ 30V
Power - Max 290mW (Ta) 310mW 300mW 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

NTUD3170NZT5G
NTUD3170NZT5G
onsemi
MOSFET 2N-CH 20V 0.22A SOT-963
FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
NX3020NAKV,115
NX3020NAKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 200MA SOT666
PMGD290XN,115
PMGD290XN,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.86A 6TSSOP
BSS138DWQ-7
BSS138DWQ-7
Diodes Incorporated
MOSFET 2NCH 50V 200MA SOT363
BSS138DW-7-F
BSS138DW-7-F
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
FDG1024NZ
FDG1024NZ
onsemi
MOSFET 2N-CH 20V 1.2A SC70-6
NTJD4105CT1G
NTJD4105CT1G
onsemi
MOSFET N/P-CH 20V/8V SOT-363
NDC7001C
NDC7001C
onsemi
MOSFET N/P-CH 60V SSOT6
EFC4C002NLTDG
EFC4C002NLTDG
onsemi
MOSFET 2N-CH 8WLCSP
FDG6301N-F085
FDG6301N-F085
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
EFC6604R-TR
EFC6604R-TR
onsemi
MOSFET 2N-CH 6EFCP

Related Product By Brand

BAS20DWQ-13
BAS20DWQ-13
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS20W-7-F
BAS20W-7-F
Diodes Incorporated
DIODE GEN PURP 150V 200MA SOT323
BAT42W-7
BAT42W-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD123
1N4007L-T
1N4007L-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BZX84C3V9TS-7-F
BZX84C3V9TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.9V SOT363
BZX84C4V3TS-7-F
BZX84C4V3TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 4.3V SOT363
BZX84C33-7-F
BZX84C33-7-F
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C36-7-G
BZX84C36-7-G
Diodes Incorporated
DIODE ZENER
BCV49TA
BCV49TA
Diodes Incorporated
TRANS NPN DARL 60V 0.5A SOT89-3
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523
74LVC1G08FW5-7
74LVC1G08FW5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6