2N7002DWS-7
  • Share:

Diodes Incorporated 2N7002DWS-7

Manufacturer No:
2N7002DWS-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET BVDSS: 41V-60V SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWS-7 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for high-efficiency power management applications. The MOSFET is packaged in an ultra-small surface mount package, specifically the SC-70-6 or SOT-363, and is fully RoHS compliant, halogen-free, and antimony-free.

Key Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
Drain-Source Breakdown VoltageBVDSS6070VVGS = 0V, ID = 10µA
Gate Threshold VoltageVGS(TH)1.02.0VVDS = VGS, ID = 250µA
Static Drain-Source On-ResistanceRDS(ON)7.5ΩVGS = 5V, ID = 0.05A
On-State Drain CurrentID(ON)0.23AVGS = 10V, VDS = 7.5V
Input CapacitanceCiss50pFVDS = 25V, VGS = 0V, f = 1.0MHz
Operating TemperatureTJ-55150°C
PackageSC-70-6, SOT-363

Key Features

  • Dual N-channel MOSFET
  • Low on-state resistance (RDS(ON))
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free

Applications

  • Motor control
  • Power management functions

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002DWS-7?
    The drain-source breakdown voltage (BVDSS) is 60V to 70V.
  2. What is the gate threshold voltage range for this MOSFET?
    The gate threshold voltage (VGS(TH)) ranges from 1.0V to 2.0V.
  3. What is the maximum on-state drain current for this device?
    The maximum on-state drain current (ID(ON)) is 0.23A at VGS = 10V and VDS = 7.5V.
  4. What is the typical input capacitance of the 2N7002DWS-7?
    The input capacitance (Ciss) is typically up to 50pF at VDS = 25V and VGS = 0V.
  5. What are the operating temperature ranges for this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. Is the 2N7002DWS-7 RoHS compliant?
    Yes, the 2N7002DWS-7 is fully RoHS compliant, halogen-free, and antimony-free.
  7. What are the common applications of the 2N7002DWS-7?
    Common applications include motor control and power management functions.
  8. What package types are available for the 2N7002DWS-7?
    The device is available in SC-70-6 and SOT-363 packages.
  9. What is the maximum power dissipation for this MOSFET?
    The maximum power dissipation is 200mW.
  10. Is the 2N7002DWS-7 suitable for automotive applications?
    For automotive applications, please refer to the related automotive grade (Q-suffix) part.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:247mA (Ta)
Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:41pF @ 25V
Power - Max:290mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.09
7,471

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002DWS-7 2N7002DW-7 2N7002DWA-7 2N7002DWK-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 247mA (Ta) 230mA 180mA 261mA (Ta)
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 10V 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V - 0.87nC @ 10V 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 25V 50pF @ 25V 22pF @ 25V 41pF @ 30V
Power - Max 290mW (Ta) 310mW 300mW 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
FDME1024NZT
FDME1024NZT
onsemi
MOSFET 2N-CH 20V 3.8A 6-MICROFET
FDC6561AN-NB5S007A
FDC6561AN-NB5S007A
onsemi
FET 30V 95.0 MOHM SSOT6
FDMB2308PZ
FDMB2308PZ
onsemi
MOSFET 2P-CH MLP2X3
NTJD4105CT2G
NTJD4105CT2G
onsemi
MOSFET N/P-CH 20V/8V SOT-363
FDG6308P
FDG6308P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NDC7003P
NDC7003P
onsemi
MOSFET 2P-CH 60V 0.34A SSOT6
BUK9K89-100E,115
BUK9K89-100E,115
Nexperia USA Inc.
MOSFET 2N-CH 100V 12.5A LFPAK56D
STL8DN6LF6AG
STL8DN6LF6AG
STMicroelectronics
MOSFET N-CH 60V 32A POWERFLAT
2N7002DWAQ-7
2N7002DWAQ-7
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 3K
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NTMFD4C86NT3G
NTMFD4C86NT3G
onsemi
MOSFET 2N-CH 30V 11.3/18.1A 8DFN

Related Product By Brand

BAS16HTWQ-13
BAS16HTWQ-13
Diodes Incorporated
DIODE FS 100V 200MA SOT363
BAV23SQ-13-F
BAV23SQ-13-F
Diodes Incorporated
DIODE ARRAY GP 200V SOT23-3
BAV70DW-7
BAV70DW-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BAS16-7-G
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
BZX84C3V6-7-F
BZX84C3V6-7-F
Diodes Incorporated
DIODE ZENER 3.6V 300MW SOT23-3
BZX84C12Q-7-F
BZX84C12Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C33Q-13-F
BZX84C33Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C30Q-13-F
BZX84C30Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C13T-7-F
BZX84C13T-7-F
Diodes Incorporated
DIODE ZENER 13V 150MW SOT523
BZX84C30-7-F-31
BZX84C30-7-F-31
Diodes Incorporated
DIODE ZENER 30V 300MW SOT23
BC857C-7-F
BC857C-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT23-3