English
2N7002DWK-7
  • Share:

Diodes Incorporated 2N7002DWK-7

Manufacturer No:
2N7002DWK-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT363 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWK is a dual N-Channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer low on-state resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and fast switching speed, making it ideal for high-efficiency power management applications. The MOSFET is packaged in an ultra-small surface mount package, specifically the SOT363 package, and is fully RoHS compliant, lead-free, and halogen and antimony free.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 10µA
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 261 mA (TA = +25°C)
208 mA (TA = +70°C)		 VGS = 10V
Gate Threshold Voltage VGS(TH) 1.0 - 2.0 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 3.0 Ω @ VGS = 10V, ID = 200mA
4.0 Ω @ VGS = 4.5V, ID = 150mA
Turn-On Rise Time tR 5.8 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 37.8 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Ultra-Small Surface Mount Package (SOT363)

Applications

  • Motor Control
  • Power Management Functions
  • High-efficiency power management applications
  • Automotive applications requiring specific change control (e.g., AEC-Q100/101/200 qualified)

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002DWK?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = 10V?

    The typical on-state resistance (RDS(ON)) at VGS = 10V is 3.0 Ω.

  3. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.0 V.

  4. What are the key features of the 2N7002DWK MOSFET?

    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  5. Is the 2N7002DWK RoHS compliant?
  6. What is the package type of the 2N7002DWK?

    The package type is SOT363.

  7. What are the typical applications of the 2N7002DWK?

    The typical applications include motor control, power management functions, and high-efficiency power management applications.

  8. What is the maximum continuous drain current at TA = +25°C?

    The maximum continuous drain current at TA = +25°C is 261 mA.

  9. What is the turn-on rise time of the 2N7002DWK?

    The turn-on rise time is 5.8 ns.

  10. Is the 2N7002DWK suitable for automotive applications?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:261mA (Ta)
Rds On (Max) @ Id, Vgs:3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:41pF @ 30V
Power - Max:330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.06
1,657

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number 2N7002DWK-7 2N7002DWS-7 2N7002DW-7 2N7002DWA-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 261mA (Ta) 247mA (Ta) 230mA 180mA
Rds On (Max) @ Id, Vgs 3Ohm @ 200mA, 10V 4Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.04nC @ 10V 0.4nC @ 4.5V - 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 30V 41pF @ 25V 50pF @ 25V 22pF @ 25V
Power - Max 330mW (Ta) 290mW (Ta) 310mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

FDMC8200S
FDMC8200S
onsemi
MOSFET 2N-CH 30V 6A/8.5A 8MLP
PMDXB550UNEZ
PMDXB550UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.59A 6DFN
IRF7103TRPBF
IRF7103TRPBF
Infineon Technologies
MOSFET 2N-CH 50V 3A 8-SOIC
CSD87501LT
CSD87501LT
Texas Instruments
MOSFET 2N-CH 30V 10PICOSTAR
NVMFD5C680NLWFT1G
NVMFD5C680NLWFT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
BUK9K6R8-40EX
BUK9K6R8-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
NVMFD5C470NLT1G
NVMFD5C470NLT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
PMZB290UNE2315
PMZB290UNE2315
NXP USA Inc.
1A, 20V, N CHANNEL, MOSFET, XQF
NVMFD5C446NWFT1G
NVMFD5C446NWFT1G
onsemi
40V 2.9 MOHM T8 S08FL DUA
NTMFD4C86NT3G
NTMFD4C86NT3G
onsemi
MOSFET 2N-CH 30V 11.3/18.1A 8DFN
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8
2N7002DWKX-7
2N7002DWKX-7
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAV170-7-F
BAV170-7-F
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT23-3
BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C13S-7-F
BZX84C13S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 13V SOT363
BZX84C8V2W-7-F
BZX84C8V2W-7-F
Diodes Incorporated
DIODE ZENER 8.2V 200MW SOT323
BZX84C5V6TA
BZX84C5V6TA
Diodes Incorporated
DIODE ZENER 5.6V 350MW SOT23-3
BZX84B5V6-7-F-79
BZX84B5V6-7-F-79
Diodes Incorporated
DIODE ZENER
BCX17TA
BCX17TA
Diodes Incorporated
TRANS PNP 45V 0.5A SOT23-3
MMBT2222A-7-F-79
MMBT2222A-7-F-79
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
2N7002DW-7-G
2N7002DW-7-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
74LVC1G07SE-7
74LVC1G07SE-7
Diodes Incorporated
IC BUF NON-INVERT 5.5V SOT353
74HC04T14-13
74HC04T14-13
Diodes Incorporated
IC INVERTER 6CH 1-INP 14TSSOP