2N7002DWK-7
  • Share:

Diodes Incorporated 2N7002DWK-7

Manufacturer No:
2N7002DWK-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT363 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWK is a dual N-Channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer low on-state resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and fast switching speed, making it ideal for high-efficiency power management applications. The MOSFET is packaged in an ultra-small surface mount package, specifically the SOT363 package, and is fully RoHS compliant, lead-free, and halogen and antimony free.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 10µA
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 261 mA (TA = +25°C)
208 mA (TA = +70°C)
VGS = 10V
Gate Threshold Voltage VGS(TH) 1.0 - 2.0 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 3.0 Ω @ VGS = 10V, ID = 200mA
4.0 Ω @ VGS = 4.5V, ID = 150mA
Turn-On Rise Time tR 5.8 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 37.8 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Ultra-Small Surface Mount Package (SOT363)

Applications

  • Motor Control
  • Power Management Functions
  • High-efficiency power management applications
  • Automotive applications requiring specific change control (e.g., AEC-Q100/101/200 qualified)

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002DWK?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = 10V?

    The typical on-state resistance (RDS(ON)) at VGS = 10V is 3.0 Ω.

  3. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.0 V.

  4. What are the key features of the 2N7002DWK MOSFET?

    The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  5. Is the 2N7002DWK RoHS compliant?
  6. What is the package type of the 2N7002DWK?

    The package type is SOT363.

  7. What are the typical applications of the 2N7002DWK?

    The typical applications include motor control, power management functions, and high-efficiency power management applications.

  8. What is the maximum continuous drain current at TA = +25°C?

    The maximum continuous drain current at TA = +25°C is 261 mA.

  9. What is the turn-on rise time of the 2N7002DWK?

    The turn-on rise time is 5.8 ns.

  10. Is the 2N7002DWK suitable for automotive applications?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:261mA (Ta)
Rds On (Max) @ Id, Vgs:3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:41pF @ 30V
Power - Max:330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.06
1,657

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002DWK-7 2N7002DWS-7 2N7002DW-7 2N7002DWA-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 261mA (Ta) 247mA (Ta) 230mA 180mA
Rds On (Max) @ Id, Vgs 3Ohm @ 200mA, 10V 4Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.04nC @ 10V 0.4nC @ 4.5V - 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 30V 41pF @ 25V 50pF @ 25V 22pF @ 25V
Power - Max 330mW (Ta) 290mW (Ta) 310mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

NTUD3170NZT5G
NTUD3170NZT5G
onsemi
MOSFET 2N-CH 20V 0.22A SOT-963
NX7002AKS,115
NX7002AKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.17A SC-88
NTMD6N02R2G
NTMD6N02R2G
onsemi
MOSFET 2N-CH 20V 3.92A 8SOIC
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
NVMFD5C466NLWFT1G
NVMFD5C466NLWFT1G
onsemi
MOSFET 2N-CH 40V 52A S08FL
PMZ370UNE,315
PMZ370UNE,315
Nexperia USA Inc.
0.9A, 30V, N CHANNEL, MOSFET, S
PMV20XNEA,215
PMV20XNEA,215
Nexperia USA Inc.
6.3A, 20V, N CHANNEL, SILICON, M
NTGD4167CT1G
NTGD4167CT1G
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
PHKD13N03LT,518
PHKD13N03LT,518
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
NVMD6P02R2G
NVMD6P02R2G
onsemi
MOSFET 2P-CH 20V 4.8A 8SOIC
PMGD175XNEAX
PMGD175XNEAX
Nexperia USA Inc.
MOSFET 2 N-CH 30V 900MA SOT363

Related Product By Brand

BAV70LP-7
BAV70LP-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA 3XDFN
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS40-06Q-7-F
BAS40-06Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
BAT54CDW-13-F
BAT54CDW-13-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
1N4148WT-7-G
1N4148WT-7-G
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BZX84C6V8Q-13-F
BZX84C6V8Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C20-7
BZX84C20-7
Diodes Incorporated
DIODE ZENER 20V 300MW SOT23-3
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
74LVC1G07FW4-7
74LVC1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
74HCT595S16-13
74HCT595S16-13
Diodes Incorporated
HC HIGH PIN COUNT SO-16