NX3008NBKSH
  • Share:

Nexperia USA Inc. NX3008NBKSH

Manufacturer No:
NX3008NBKSH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CH 30V 350MA 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKW,115 is an N-Channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. This MOSFET is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring fast switching and low power consumption.

Key Specifications

Parameter Value Unit
Brand Nexperia
Channel Type N
Maximum Continuous Drain Current 350 mA
Maximum Drain Source Voltage 30 V
Package Type SOT-323
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 1.4 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.1 V
Minimum Gate Threshold Voltage 0.6 V
Maximum Power Dissipation 830 mW
Maximum Gate Source Voltage -8 V, +8 V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Forward Diode Voltage 1.2 V
Automotive Standard AEC-Q101

Key Features

  • Very fast switching
  • Low threshold voltage
  • Trench MOSFET technology for high efficiency
  • ESD protection up to 2 kV
  • AEC-Q101 qualified for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum continuous drain current of the NX3008NBKW,115?

    The maximum continuous drain current is 350 mA.

  2. What is the maximum drain-source voltage of the NX3008NBKW,115?

    The maximum drain-source voltage is 30 V.

  3. What package type is used for the NX3008NBKW,115?

    The package type is SOT-323.

  4. What is the channel mode of the NX3008NBKW,115?

    The channel mode is enhancement.

  5. What is the maximum gate threshold voltage of the NX3008NBKW,115?

    The maximum gate threshold voltage is 1.1 V.

  6. What is the maximum power dissipation of the NX3008NBKW,115?

    The maximum power dissipation is 830 mW.

  7. What is the automotive standard qualification for the NX3008NBKW,115?

    The NX3008NBKW,115 is AEC-Q101 qualified.

  8. What are some typical applications of the NX3008NBKW,115?

    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  9. What is the ESD protection level of the NX3008NBKW,115?

    The ESD protection level is up to 2 kV.

  10. What is the operating temperature range of the NX3008NBKW,115?

    The operating temperature range is from -55 °C to +150 °C.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 15V
Power - Max:445mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.51
1,330

Please send RFQ , we will respond immediately.

Same Series
NX3008NBKS,115
NX3008NBKS,115
MOSFET 2N-CH 30V 0.35A 6TSSOP

Related Product By Categories

FDME1024NZT
FDME1024NZT
onsemi
MOSFET 2N-CH 20V 3.8A 6-MICROFET
BSS138AKDW-TP
BSS138AKDW-TP
Micro Commercial Co
DUAL N-CHANNEL MOSFET, SOT-363
BUK9K29-100E,115
BUK9K29-100E,115
Nexperia USA Inc.
MOSFET 2N-CH 100V 30A LFPAK56D
NVMFD5C462NLT1G
NVMFD5C462NLT1G
onsemi
MOSFET 2N-CH 40V 84A S08FL
BUK9K13-60EX
BUK9K13-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 40A LFPAK56D
FDG6321C-F169
FDG6321C-F169
onsemi
DUAL N & P CHANNEL DIGITAL FET 2
NTMD4820NR2G
NTMD4820NR2G
onsemi
MOSFET 2N-CH 30V 4.9A 8SOIC
STL13DP10F6
STL13DP10F6
STMicroelectronics
MOSFET 2P-CH 100V 13A PWRFLAT56
MCH6661-TL-W
MCH6661-TL-W
onsemi
MOSFET 2N-CH 30V 1.8A SOT363
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8
FDC6333C-G
FDC6333C-G
onsemi
MOSFET N-CH 60V SUPERSOT6
BSS84V-7-79
BSS84V-7-79
Diodes Incorporated
DIODE

Related Product By Brand

BAT54QB-QZ
BAT54QB-QZ
Nexperia USA Inc.
BAT54QB-Q/SOT8015/DFN1110D-3
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HC4050DB,112
74HC4050DB,112
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74HC11DB,112
74HC11DB,112
Nexperia USA Inc.
NEXPERIA 74HC11D - AND GATE, HC/
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
74AUP1G157GM-Q100X
74AUP1G157GM-Q100X
Nexperia USA Inc.
IC MULTIPLX 1 X 2:1 6XSON/SOT886