Overview
The NTLUD3A260PZTAG is a dual P-channel MOSFET produced by ON Semiconductor. This device is designed for high-performance applications, particularly in power management and switching roles. It features a compact 6-UFDFN exposed pad package, measuring 1.6 x 1.6 x 0.55 mm, which is ideal for space-constrained designs. The MOSFET is ESD protected, Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Category | Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Number of Pins | 6 Pins |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate to Source Voltage (Vgs) | ±8 V |
| Continuous Drain Current (ID) | 1.7 A (at TA = 25°C), 1.2 A (at TA = 85°C) |
| Power Dissipation | 0.5 W (steady state), 1.3 W (for t ≤ 5 s) |
| Operating Temperature | -55°C to 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 200 mΩ @ 2 A, 4.5 V |
| Vgs(th) (Max) @ Id | 1 V @ 250 μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4.5 V |
| Rise Time | 32.3 ns |
| Fall Time (Typ) | 74 ns |
| Turn On Delay Time | 17.4 ns |
| Turn Off Delay Time | 149 ns |
Key Features
- Compact 6-UFDFN exposed pad package for excellent thermal conduction and board space saving.
- ESD protected to enhance reliability in harsh environments.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- Logic level gate for easy integration with digital circuits.
- Low profile design (1.6 x 1.6 x 0.55 mm) suitable for portable and compact devices.
- Enhancement mode operation with low Rds(on) for efficient switching.
Applications
- High side load switching.
- PA (Power Amplifier) switching.
- Power management applications for portable products such as cell phones, portable media players (PMP), digital still cameras (DSC), GPS devices, and others.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the NTLUD3A260PZTAG MOSFET?
The maximum drain-to-source voltage (Vdss) is 20 V.
- What is the continuous drain current (ID) rating at 25°C and 85°C?
The continuous drain current (ID) is 1.7 A at 25°C and 1.2 A at 85°C.
- What is the maximum gate-to-source voltage (Vgs) for this MOSFET?
The maximum gate-to-source voltage (Vgs) is ±8 V.
- What is the typical turn-on and turn-off delay time for this device?
The typical turn-on delay time is 17.4 ns, and the typical turn-off delay time is 149 ns.
- Is the NTLUD3A260PZTAG MOSFET RoHS compliant?
Yes, the NTLUD3A260PZTAG MOSFET is RoHS compliant, Pb-free, and halogen-free.
- What are the typical rise and fall times for this MOSFET?
The typical rise time is 32.3 ns, and the typical fall time is 74 ns.
- What is the maximum power dissipation for the NTLUD3A260PZTAG MOSFET?
The maximum power dissipation is 0.5 W (steady state) and 1.3 W (for t ≤ 5 s).
- What are the operating temperature ranges for this device?
The operating temperature range is -55°C to 150°C (TJ).
- What are some common applications for the NTLUD3A260PZTAG MOSFET?
Common applications include high side load switching, PA switching, and power management in portable devices like cell phones, PMP, DSC, GPS, etc.
- What is the package type and dimensions of the NTLUD3A260PZTAG MOSFET?
The package type is 6-UFDFN exposed pad, with dimensions of 1.6 x 1.6 x 0.55 mm.
