ECH8651R-TL-H
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onsemi ECH8651R-TL-H

Manufacturer No:
ECH8651R-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 24V 10A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ECH8651R-TL-H is a dual N-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is part of the ECH8 package and is notable for its low ON-resistance, built-in gate protection resistor, and 2.5V drive capability. It is particularly suited for lithium-ion battery (LiB) charging and discharging switch applications. The MOSFET is halogen-free and includes a protection diode, making it a reliable choice for various power management systems.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS - 24 V
Gate-to-Source Voltage VGSS - ±12 V
Drain Current (DC) ID - 10 A
Drain Current (Pulse) IDP PW ≤ 10μs, duty cycle ≤ 1% 60 A
Allowable Power Dissipation PD When mounted on ceramic substrate (900mm² × 0.8mm) 1unit 1.4 W
Total Dissipation PT When mounted on ceramic substrate (900mm² × 0.8mm) 1.5 W
Channel Temperature Tch - 150 °C
Storage Temperature Tstg - -55 to +150 °C
Static Drain-to-Source On-State Resistance RDS(on) ID = 5A, VGS = 4.5V 7 - 10.5 - 14 mΩ
Turn-ON Delay Time td(on) - 300 ns
Rise Time tr - 1000 ns
Turn-OFF Delay Time td(off) - 4000 ns
Fall Time tf - 2500 ns
Total Gate Charge Qg VDS = 10V, VGS = 10V, ID = 10A 24 nC

Key Features

  • Low ON-resistance: Ensures minimal power loss during operation.
  • Built-in gate protection resistor: Enhances device reliability by protecting the gate from voltage spikes.
  • 2.5V drive capability: Allows for low-voltage control, making it suitable for a wide range of applications.
  • Best suited for LiB charging and discharging switch: Optimized for battery management systems.
  • Common-drain type: Simplifies circuit design and reduces component count.
  • Halogen-free compliance: Meets environmental and safety standards.
  • Protection diode included: Provides additional protection against reverse currents.

Applications

  • Lithium-ion battery (LiB) charging and discharging switches: Ideal for battery management systems in electric vehicles, renewable energy systems, and consumer electronics.
  • Power management systems: Suitable for DC-DC converters, power supplies, and other high-efficiency power management applications.
  • Automotive systems: Can be used in various automotive applications requiring high reliability and efficiency.
  • Industrial power systems: Applicable in industrial power supplies, motor control, and other high-power applications.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the ECH8651R-TL-H?

    A: The maximum drain-to-source voltage (VDSS) is 24V.

  2. Q: What is the continuous drain current rating of the ECH8651R-TL-H?

    A: The continuous drain current (ID) is 10A.

  3. Q: What is the typical ON-resistance of the ECH8651R-TL-H?

    A: The typical static drain-to-source ON-resistance (RDS(on)) is 7-10.5-14 mΩ at ID = 5A and VGS = 4.5V.

  4. Q: Is the ECH8651R-TL-H halogen-free?

    A: Yes, the ECH8651R-TL-H is halogen-free, complying with environmental and safety standards.

  5. Q: What is the package type of the ECH8651R-TL-H?

    A: The package type is ECH8, an 8-pin surface mount package.

  6. Q: What is the storage temperature range for the ECH8651R-TL-H?

    A: The storage temperature range is -55°C to +150°C.

  7. Q: Does the ECH8651R-TL-H have built-in protection features?

    A: Yes, it includes a built-in gate protection resistor and a protection diode.

  8. Q: What is the typical turn-on delay time of the ECH8651R-TL-H?

    A: The typical turn-on delay time (td(on)) is 300 ns.

  9. Q: What is the maximum channel temperature of the ECH8651R-TL-H?

    A: The maximum channel temperature (Tch) is 150°C.

  10. Q: How many pieces are included in the minimum packing quantity of the ECH8651R-TL-H?

    A: The minimum packing quantity is 3,000 pieces per reel.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):24V
Current - Continuous Drain (Id) @ 25°C:10A
Rds On (Max) @ Id, Vgs:14mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:1.5W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
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In Stock

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Same Series
ECH8651R-TL-HX
ECH8651R-TL-HX
MOSFET 2N-CH 24V 10A ECH8

Similar Products

Part Number ECH8651R-TL-H ECH8655R-TL-H ECH8651R-TL-HX
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 24V 24V 24V
Current - Continuous Drain (Id) @ 25°C 10A 9A 10A
Rds On (Max) @ Id, Vgs 14mOhm @ 5A, 4.5V 17mOhm @ 4.5A, 4.5V 14mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V 16.8nC @ 10V 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - - -
Power - Max 1.5W 1.5W 1.5W
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH 8-ECH

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