NX1029X,115
  • Share:

Nexperia USA Inc. NX1029X,115

Manufacturer No:
NX1029X,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 60V/50V SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX1029X,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia. This device utilizes Trench MOSFET technology and is packaged in an ultra-small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. The NX1029X is designed for high efficiency and reliability, making it suitable for a wide range of applications across various industries, including automotive, industrial, power, computing, and consumer electronics.

Key Specifications

Type number Package version Package name Product status Channel type Nr of transistors V DS [max] (V) V GS [max] (V) R DSon [max] @ V GS = 10 V (mΩ) R DSon [max] @ V GS = 5 V (mΩ) V ESD (kV) T j [max] (°C) I D [max] (A) Q GD [typ] (nC) Q G(tot) [typ] @ V GS = 4.5 V (nC) P tot [max] (W) V GSth [typ] (V) Automotive qualified C iss [typ] (pF) C oss [typ] (pF) Release date
NX1029X SOT666 SOT666 Production N/P 2 60 20 1600 2000 2000 150 0.33 0.09 0.5 0.33 1.6 N 24 4.5 2011-08-12

Key Features

  • Logic-level compatible: Ensures easy integration with logic circuits.
  • Very fast switching: Optimized for high-speed applications.
  • Trench MOSFET technology: Provides high efficiency and low on-resistance.
  • ESD protection: Up to 2 kV for N-channel and 1 kV for P-channel.

Applications

  • Level shifter: Suitable for voltage translation in digital circuits.
  • Power supply converter: Used in DC-DC converters and power management systems.
  • Loadswitch: Ideal for controlling power to various loads in electronic systems.
  • Switching circuits: Applicable in high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (V DS) for the NX1029X?

    The maximum drain-source voltage (V DS) is 60 V for the NX1029X.

  2. What is the package type of the NX1029X,115?

    The package type is SOT666, an ultra-small and flat lead Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum drain current (I D) for the NX1029X?

    The maximum drain current (I D) is 0.33 A.

  4. Does the NX1029X have ESD protection?
  5. Is the NX1029X RoHS compliant?
  6. What are the typical applications of the NX1029X?

    The NX1029X is typically used in level shifters, power supply converters, load switches, and switching circuits.

  7. Is the NX1029X automotive qualified?
  8. What is the maximum junction temperature (T j) for the NX1029X?

    The maximum junction temperature (T j) is 150°C).

  9. Does the NX1029X have any precious metal content?
  10. Is the NX1029X lead-free and halogen-free?
  11. Where can I find more detailed technical information about the NX1029X?

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V, 50V
Current - Continuous Drain (Id) @ 25°C:330mA, 170mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:36pF @ 25V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
0 Remaining View Similar

In Stock

$0.44
265

Please send RFQ , we will respond immediately.

Related Product By Categories

NTJD4001NT1G
NTJD4001NT1G
onsemi
MOSFET 2N-CH 30V 0.25A SOT-363
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NTZD5110NT1G
NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 294MA SOT563
FDS4935BZ
FDS4935BZ
onsemi
MOSFET 2P-CH 30V 6.9A 8SOIC
NVJD5121NT1G
NVJD5121NT1G
onsemi
MOSFET 2N-CH 60V 0.295A SC88
BUK7K52-60EX
BUK7K52-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 15.4A LFPAK
NVMFD5C674NLT1G
NVMFD5C674NLT1G
onsemi
MOSFET 2N-CH 60V 42A S08FL
NTLJD4116NT1G
NTLJD4116NT1G
onsemi
MOSFET 2N-CH 30V 2.5A 6WDFN
2N7002DWK-13
2N7002DWK-13
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
BSS8402DWQ-13
BSS8402DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
EFC4621R-TR
EFC4621R-TR
onsemi
MOSFET 2N-CH EFCP

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
PCMF3USB30Z
PCMF3USB30Z
Nexperia USA Inc.
CMC 6LN SMD ESD
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D