NX1029X,115
  • Share:

Nexperia USA Inc. NX1029X,115

Manufacturer No:
NX1029X,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 60V/50V SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX1029X,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia. This device utilizes Trench MOSFET technology and is packaged in an ultra-small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. The NX1029X is designed for high efficiency and reliability, making it suitable for a wide range of applications across various industries, including automotive, industrial, power, computing, and consumer electronics.

Key Specifications

Type number Package version Package name Product status Channel type Nr of transistors V DS [max] (V) V GS [max] (V) R DSon [max] @ V GS = 10 V (mΩ) R DSon [max] @ V GS = 5 V (mΩ) V ESD (kV) T j [max] (°C) I D [max] (A) Q GD [typ] (nC) Q G(tot) [typ] @ V GS = 4.5 V (nC) P tot [max] (W) V GSth [typ] (V) Automotive qualified C iss [typ] (pF) C oss [typ] (pF) Release date
NX1029X SOT666 SOT666 Production N/P 2 60 20 1600 2000 2000 150 0.33 0.09 0.5 0.33 1.6 N 24 4.5 2011-08-12

Key Features

  • Logic-level compatible: Ensures easy integration with logic circuits.
  • Very fast switching: Optimized for high-speed applications.
  • Trench MOSFET technology: Provides high efficiency and low on-resistance.
  • ESD protection: Up to 2 kV for N-channel and 1 kV for P-channel.

Applications

  • Level shifter: Suitable for voltage translation in digital circuits.
  • Power supply converter: Used in DC-DC converters and power management systems.
  • Loadswitch: Ideal for controlling power to various loads in electronic systems.
  • Switching circuits: Applicable in high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (V DS) for the NX1029X?

    The maximum drain-source voltage (V DS) is 60 V for the NX1029X.

  2. What is the package type of the NX1029X,115?

    The package type is SOT666, an ultra-small and flat lead Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum drain current (I D) for the NX1029X?

    The maximum drain current (I D) is 0.33 A.

  4. Does the NX1029X have ESD protection?
  5. Is the NX1029X RoHS compliant?
  6. What are the typical applications of the NX1029X?

    The NX1029X is typically used in level shifters, power supply converters, load switches, and switching circuits.

  7. Is the NX1029X automotive qualified?
  8. What is the maximum junction temperature (T j) for the NX1029X?

    The maximum junction temperature (T j) is 150°C).

  9. Does the NX1029X have any precious metal content?
  10. Is the NX1029X lead-free and halogen-free?
  11. Where can I find more detailed technical information about the NX1029X?

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V, 50V
Current - Continuous Drain (Id) @ 25°C:330mA, 170mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:36pF @ 25V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
0 Remaining View Similar

In Stock

$0.44
265

Please send RFQ , we will respond immediately.

Related Product By Categories

FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
FDG1024NZ
FDG1024NZ
onsemi
MOSFET 2N-CH 20V 1.2A SC70-6
PMGD290UCEAX
PMGD290UCEAX
Nexperia USA Inc.
MOSFET N/P-CH 20V 6TSSOP
BSS138BKSH
BSS138BKSH
Nexperia USA Inc.
BSS138BKS/SOT363/SC-88
FDG6317NZ
FDG6317NZ
onsemi
MOSFET 2N-CH 20V 0.7A SC70-6
NVMFD5C462NLT1G
NVMFD5C462NLT1G
onsemi
MOSFET 2N-CH 40V 84A S08FL
PSMN035-150B
PSMN035-150B
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 5
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
NVMD3P03R2G
NVMD3P03R2G
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
FDG6301N-F085
FDG6301N-F085
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
BSS84V-7-79
BSS84V-7-79
Diodes Incorporated
DIODE

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
IP4791CZ12,132
IP4791CZ12,132
Nexperia USA Inc.
IC INTERFACE SPECIALIZED 12HXSON
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC