NX1029X,115
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Nexperia USA Inc. NX1029X,115

Manufacturer No:
NX1029X,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 60V/50V SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NX1029X,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia. This device utilizes Trench MOSFET technology and is packaged in an ultra-small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. The NX1029X is designed for high efficiency and reliability, making it suitable for a wide range of applications across various industries, including automotive, industrial, power, computing, and consumer electronics.

Key Specifications

Type number Package version Package name Product status Channel type Nr of transistors V DS [max] (V) V GS [max] (V) R DSon [max] @ V GS = 10 V (mΩ) R DSon [max] @ V GS = 5 V (mΩ) V ESD (kV) T j [max] (°C) I D [max] (A) Q GD [typ] (nC) Q G(tot) [typ] @ V GS = 4.5 V (nC) P tot [max] (W) V GSth [typ] (V) Automotive qualified C iss [typ] (pF) C oss [typ] (pF) Release date
NX1029X SOT666 SOT666 Production N/P 2 60 20 1600 2000 2000 150 0.33 0.09 0.5 0.33 1.6 N 24 4.5 2011-08-12

Key Features

  • Logic-level compatible: Ensures easy integration with logic circuits.
  • Very fast switching: Optimized for high-speed applications.
  • Trench MOSFET technology: Provides high efficiency and low on-resistance.
  • ESD protection: Up to 2 kV for N-channel and 1 kV for P-channel.

Applications

  • Level shifter: Suitable for voltage translation in digital circuits.
  • Power supply converter: Used in DC-DC converters and power management systems.
  • Loadswitch: Ideal for controlling power to various loads in electronic systems.
  • Switching circuits: Applicable in high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (V DS) for the NX1029X?

    The maximum drain-source voltage (V DS) is 60 V for the NX1029X.

  2. What is the package type of the NX1029X,115?

    The package type is SOT666, an ultra-small and flat lead Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum drain current (I D) for the NX1029X?

    The maximum drain current (I D) is 0.33 A.

  4. Does the NX1029X have ESD protection?
  5. Is the NX1029X RoHS compliant?
  6. What are the typical applications of the NX1029X?

    The NX1029X is typically used in level shifters, power supply converters, load switches, and switching circuits.

  7. Is the NX1029X automotive qualified?
  8. What is the maximum junction temperature (T j) for the NX1029X?

    The maximum junction temperature (T j) is 150°C).

  9. Does the NX1029X have any precious metal content?
  10. Is the NX1029X lead-free and halogen-free?
  11. Where can I find more detailed technical information about the NX1029X?

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V, 50V
Current - Continuous Drain (Id) @ 25°C:330mA, 170mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:36pF @ 25V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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