NX3008PBK,215
  • Share:

Nexperia USA Inc. NX3008PBK,215

Manufacturer No:
NX3008PBK,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 230MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008PBK,215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of Nexperia’s extensive portfolio of MOSFETs, designed to meet the demands of various electronic applications. The NX3008PBK is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology for enhanced performance.

This MOSFET is suitable for a wide range of applications, including automotive, industrial, power, computing, consumer, mobile, and wearables, due to its robust specifications and reliability.

Key Specifications

Parameter Description Value
Type number Part number NX3008PBK
Package SOT23 (TO-236AB) SOT23
Channel type P-channel P
VDS [max] (V) Maximum drain-source voltage -30
VGS [max] (V) Maximum gate-source voltage 8
RDSon [max] @ VGS = 4.5 V (mΩ) Maximum on-resistance at VGS = 4.5 V 4100
RDSon [max] @ VGS = 2.5 V (mΩ) Maximum on-resistance at VGS = 2.5 V 6500
Tj [max] (°C) Maximum junction temperature 150
ID [max] (A) Maximum drain current -0.23
QGD [typ] (nC) Typical gate-drain charge 0.09
QG(tot) [typ] @ VGS = 4.5 V (nC) Typical total gate charge at VGS = 4.5 V 0.55
Ptot [max] (W) Maximum total power dissipation 0.35
VGSth [typ] (V) Typical gate-source threshold voltage -0.9
Automotive qualified Automotive qualification status Yes
Ciss [typ] (pF) Typical input capacitance 31
Coss [typ] (pF) Typical output capacitance 6.5

Key Features

  • Trench MOSFET Technology: Enhances performance with lower on-resistance and improved thermal characteristics.
  • Small SOT23 Package: Compact TO-236AB package suitable for space-constrained designs.
  • High Voltage and Current Capability: Maximum drain-source voltage of -30 V and maximum drain current of -0.23 A.
  • Low On-Resistance: Maximum on-resistance of 4100 mΩ at VGS = 4.5 V and 6500 mΩ at VGS = 2.5 V.
  • Automotive Qualified: Suitable for use in automotive applications due to its robust and reliable design.
  • High Junction Temperature: Maximum junction temperature of 150°C, ensuring reliability in high-temperature environments.

Applications

  • Automotive Systems: Ideal for various automotive applications such as power management, motor control, and battery management.
  • Industrial Control: Used in industrial control systems, power supplies, and motor drives.
  • Power Management: Suitable for power management in computing, consumer electronics, and mobile devices.
  • Wearables and IoT Devices: Compact size and low power consumption make it suitable for wearables and IoT applications.

Q & A

  1. What is the maximum drain-source voltage of the NX3008PBK,215?

    The maximum drain-source voltage is -30 V.

  2. What is the package type of the NX3008PBK,215?

    The package type is SOT23 (TO-236AB).

  3. What is the maximum on-resistance at VGS = 4.5 V?

    The maximum on-resistance at VGS = 4.5 V is 4100 mΩ.

  4. Is the NX3008PBK,215 automotive qualified?

    Yes, the NX3008PBK,215 is automotive qualified.

  5. What is the maximum junction temperature of the NX3008PBK,215?

    The maximum junction temperature is 150°C.

  6. What is the typical gate-source threshold voltage?

    The typical gate-source threshold voltage is -0.9 V.

  7. What are the typical input and output capacitances?

    The typical input capacitance (Ciss) is 31 pF, and the typical output capacitance (Coss) is 6.5 pF.

  8. What is the maximum total power dissipation?

    The maximum total power dissipation is 0.35 W.

  9. What are some common applications of the NX3008PBK,215?

    Common applications include automotive systems, industrial control, power management, and wearables/IoT devices.

  10. How can I obtain the datasheet for the NX3008PBK,215?

    The datasheet can be obtained from the Nexperia website or through authorized distributors like Mouser, Digi-Key, or LCSC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 1.14W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.31
3,136

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008PBK,215 NX3008NBK,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V 50 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc) 350mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PDZ10B-QX
PDZ10B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
BZX84-C33
BZX84-C33
Nexperia USA Inc.
BZX84 SERIES - VOLTAGE REGULATOR