NX3008NBK,215
  • Share:

Nexperia USA Inc. NX3008NBK,215

Manufacturer No:
NX3008NBK,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 400MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBK,215 is a 30 V, 400 mA N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed in an enhancement mode Field-Effect Transistor (FET) configuration and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The NX3008NBK is part of Nexperia’s extensive portfolio of MOSFETs, which are known for their high performance and reliability across various applications.

Key Specifications

Parameter Value Unit
Type Number NX3008NBK
Package SOT23 (TO-236AB)
Channel Type N-channel
Number of Transistors 1
VDS [max] 30 V
VGS [max] 8 V
RDSon [max] @ VGS = 4.5 V 1400
RDSon [max] @ VGS = 2.5 V 2100
Tj [max] 150 °C
ID [max] 0.4 A
QGD [typ] 0.08 nC
QG(tot) [typ] @ VGS = 4.5 V 0.52 nC
Ptot [max] 0.42 W
VGSth [typ] 0.9 V
Automotive Qualified Yes (AEC-Q101)
Ciss [typ] 34 pF
Coss [typ] 6.5 pF

Key Features

  • Very Fast Switching: The NX3008NBK is known for its fast switching capabilities, making it suitable for high-speed applications.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET ensures efficient operation and reduced power consumption.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and reliability.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the component's durability and robustness.
  • AEC-Q101 Qualified: Meets the stringent automotive standards, ensuring reliability and performance in automotive applications.

Applications

  • Relay Driver: Suitable for driving relays in various electronic systems.
  • High-Speed Line Driver: Ideal for high-speed line driving applications due to its fast switching capabilities.
  • Low-Side Load Switch: Can be used as a low-side load switch in power management circuits.
  • Switching Circuits: Applicable in various switching circuits requiring fast and efficient operation.
  • Automotive and Industrial Applications: Given its AEC-Q101 qualification, it is widely used in automotive and industrial applications where reliability and performance are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3008NBK?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the package type of the NX3008NBK?

    The package type is SOT23 (TO-236AB).

  3. Is the NX3008NBK automotive qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the maximum drain current (ID) of the NX3008NBK?

    The maximum drain current (ID) is 0.4 A.

  5. What is the typical threshold voltage (VGSth) of the NX3008NBK?

    The typical threshold voltage (VGSth) is 0.9 V.

  6. Does the NX3008NBK have ESD protection?

    Yes, it offers ESD protection up to 2 kV.

  7. What are some common applications of the NX3008NBK?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  8. What is the maximum junction temperature (Tj) of the NX3008NBK?

    The maximum junction temperature (Tj) is 150°C.

  9. What is the typical input capacitance (Ciss) of the NX3008NBK?

    The typical input capacitance (Ciss) is 34 pF.

  10. Where can I find detailed specifications and datasheets for the NX3008NBK?

    Detailed specifications and datasheets can be found on Nexperia’s official website or through authorized distributors like Mouser, Digi-Key, and others.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 1.14W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.31
1,032

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008NBK,215 NX3008PBK,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc) 350mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
BZX84-C12/DG/B3,23
BZX84-C12/DG/B3,23
Nexperia USA Inc.
DIODE ZENER 12.05V 250MW TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP