NX3008NBK,215
  • Share:

Nexperia USA Inc. NX3008NBK,215

Manufacturer No:
NX3008NBK,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 400MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBK,215 is a 30 V, 400 mA N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed in an enhancement mode Field-Effect Transistor (FET) configuration and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The NX3008NBK is part of Nexperia’s extensive portfolio of MOSFETs, which are known for their high performance and reliability across various applications.

Key Specifications

Parameter Value Unit
Type Number NX3008NBK
Package SOT23 (TO-236AB)
Channel Type N-channel
Number of Transistors 1
VDS [max] 30 V
VGS [max] 8 V
RDSon [max] @ VGS = 4.5 V 1400
RDSon [max] @ VGS = 2.5 V 2100
Tj [max] 150 °C
ID [max] 0.4 A
QGD [typ] 0.08 nC
QG(tot) [typ] @ VGS = 4.5 V 0.52 nC
Ptot [max] 0.42 W
VGSth [typ] 0.9 V
Automotive Qualified Yes (AEC-Q101)
Ciss [typ] 34 pF
Coss [typ] 6.5 pF

Key Features

  • Very Fast Switching: The NX3008NBK is known for its fast switching capabilities, making it suitable for high-speed applications.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET ensures efficient operation and reduced power consumption.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and reliability.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the component's durability and robustness.
  • AEC-Q101 Qualified: Meets the stringent automotive standards, ensuring reliability and performance in automotive applications.

Applications

  • Relay Driver: Suitable for driving relays in various electronic systems.
  • High-Speed Line Driver: Ideal for high-speed line driving applications due to its fast switching capabilities.
  • Low-Side Load Switch: Can be used as a low-side load switch in power management circuits.
  • Switching Circuits: Applicable in various switching circuits requiring fast and efficient operation.
  • Automotive and Industrial Applications: Given its AEC-Q101 qualification, it is widely used in automotive and industrial applications where reliability and performance are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3008NBK?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the package type of the NX3008NBK?

    The package type is SOT23 (TO-236AB).

  3. Is the NX3008NBK automotive qualified?

    Yes, it is AEC-Q101 qualified.

  4. What is the maximum drain current (ID) of the NX3008NBK?

    The maximum drain current (ID) is 0.4 A.

  5. What is the typical threshold voltage (VGSth) of the NX3008NBK?

    The typical threshold voltage (VGSth) is 0.9 V.

  6. Does the NX3008NBK have ESD protection?

    Yes, it offers ESD protection up to 2 kV.

  7. What are some common applications of the NX3008NBK?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  8. What is the maximum junction temperature (Tj) of the NX3008NBK?

    The maximum junction temperature (Tj) is 150°C.

  9. What is the typical input capacitance (Ciss) of the NX3008NBK?

    The typical input capacitance (Ciss) is 34 pF.

  10. Where can I find detailed specifications and datasheets for the NX3008NBK?

    Detailed specifications and datasheets can be found on Nexperia’s official website or through authorized distributors like Mouser, Digi-Key, and others.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 1.14W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.31
1,032

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008NBK,215 NX3008PBK,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc) 350mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
NX3008PBK,215
NX3008PBK,215
Nexperia USA Inc.
MOSFET P-CH 30V 230MA TO236AB
74HC244D-Q100,118
74HC244D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN