BC807-25QCZ
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Nexperia USA Inc. BC807-25QCZ

Manufacturer No:
BC807-25QCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25QCZ is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC807 series, known for its high power dissipation capability and high current handling. It is packaged in a small SOT8009 (SOT23) Surface-Mounted Device (SMD) plastic package, making it suitable for space-restricted applications. The BC807-25QCZ is designed for general-purpose switching and amplification and is qualified for use in various industries, including automotive, industrial, and consumer electronics.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCB) 45 V
Collector-Emitter Voltage (VCE) 45 V
Emitter-Base Voltage (VEB) 5 V
Collector Current (IC) 500 mA
Power Dissipation (Ptot) 250 mW
Transition Frequency (fT) 80 MHz
Package Type SOT8009 (SOT23) -
Package Dimensions 2.9 x 1.3 x 0.5 mm -
Junction Temperature (TJ) 150 °C

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections available
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • Qualified according to AEC-Q101 for automotive applications (for the Q version)

Applications

The BC807-25QCZ transistor is versatile and finds applications across various industries, including:

  • Automotive: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Industrial: Used in industrial control systems and automation.
  • Consumer Electronics: Found in mobile devices, wearables, and other consumer electronics.
  • Power and Computing: Used in power management and computing applications.

Q & A

  1. What is the collector-base voltage of the BC807-25QCZ transistor?

    The collector-base voltage (VCB) is 45 V.

  2. What is the maximum collector current of the BC807-25QCZ transistor?

    The maximum collector current (IC) is 500 mA.

  3. What package type is used for the BC807-25QCZ transistor?

    The BC807-25QCZ is packaged in a SOT8009 (SOT23) Surface-Mounted Device (SMD) plastic package.

  4. Is the BC807-25QCZ suitable for automotive applications?
  5. What are the key features of the BC807-25QCZ transistor?

    The key features include high power dissipation capability, high current handling, three current gain selections, suitability for AOI, and a small footprint.

  6. What is the maximum junction temperature of the BC807-25QCZ transistor?

    The maximum junction temperature (TJ) is 150 °C.

  7. Can the BC807-25QCZ be used in space-restricted applications?
  8. What are some common applications of the BC807-25QCZ transistor?
  9. Is the BC807-25QCZ RoHS compliant?
  10. What is the transition frequency of the BC807-25QCZ transistor?

    The transition frequency (fT) is 80 MHz.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:380 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC807-25QCZ BC807-25QAZ BC807-25QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - PNP -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 40 @ 500mA, 1V 160 @ 100mA, 1V
Power - Max 380 mW 900 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1010D-3 DFN1110D-3

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