BC817-25QB-QZ
  • Share:

Nexperia USA Inc. BC817-25QB-QZ

Manufacturer No:
BC817-25QB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25QB-QZ is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC817 series, known for its reliability and versatility in various electronic applications. The BC817-25QB-QZ is packaged in a DFN1110D-3 (SOT8015) surface-mount device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Package/Case DFN1110D-3 (SOT8015)
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100 mA, 1 V
Power - Max 350 mW
Frequency - Transition 100 MHz
Operating Temperature -55°C to 150°C
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
RoHS Compliance Yes

Key Features

  • High Current Capability: The BC817-25QB-QZ can handle a maximum collector current of 500 mA, making it suitable for applications requiring moderate to high current levels.
  • High Voltage Rating: With a collector-emitter voltage rating of 45 V, this transistor is robust and can handle a wide range of voltage conditions.
  • Low Vce Saturation: The transistor has a low Vce saturation voltage of 700 mV, which is beneficial for reducing power losses in switching and amplification applications.
  • High DC Current Gain: The minimum DC current gain (hFE) of 160 at 100 mA and 1 V ensures reliable amplification and switching performance.
  • Compact Packaging: The DFN1110D-3 package is compact and suitable for surface mount technology (SMT), making it ideal for modern, space-efficient designs.
  • AEC-Q101 Qualified: This transistor is qualified to the AEC-Q101 standard, ensuring its reliability and suitability for automotive and other demanding applications.

Applications

The BC817-25QB-QZ is versatile and can be used in a variety of applications across different industries:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive systems, including power management, sensor interfaces, and control circuits.
  • Industrial Control: It can be used in industrial control systems for switching and amplification tasks, such as in motor control, power supplies, and signal processing.
  • Consumer Electronics: The transistor is also used in consumer electronics for general-purpose switching and amplification, such as in audio amplifiers, power supplies, and other electronic devices.
  • Power Management: Its high current and voltage ratings make it suitable for power management circuits, including voltage regulators and power switches.

Q & A

  1. What is the maximum collector current of the BC817-25QB-QZ?

    The maximum collector current is 500 mA.

  2. What is the collector-emitter breakdown voltage of the BC817-25QB-QZ?

    The collector-emitter breakdown voltage is 45 V.

  3. What is the minimum DC current gain (hFE) of the BC817-25QB-QZ?

    The minimum DC current gain (hFE) is 160 at 100 mA and 1 V.

  4. What is the operating temperature range of the BC817-25QB-QZ?

    The operating temperature range is -55°C to 150°C.

  5. Is the BC817-25QB-QZ RoHS compliant?

    Yes, the BC817-25QB-QZ is RoHS compliant.

  6. What is the package type of the BC817-25QB-QZ?

    The package type is DFN1110D-3 (SOT8015).

  7. What is the qualification standard for the BC817-25QB-QZ?

    The transistor is qualified to the AEC-Q101 standard.

  8. What are some common applications of the BC817-25QB-QZ?

    Common applications include automotive systems, industrial control, consumer electronics, and power management circuits.

  9. What is the maximum power dissipation of the BC817-25QB-QZ?

    The maximum power dissipation is 350 mW.

  10. What is the transition frequency of the BC817-25QB-QZ?

    The transition frequency is 100 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.04
2,223

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
NXB0108PWJ
NXB0108PWJ
Nexperia USA Inc.
NXB0108PW/SOT360/TSSOP20