BC817-25QB-QZ
  • Share:

Nexperia USA Inc. BC817-25QB-QZ

Manufacturer No:
BC817-25QB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25QB-QZ is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC817 series, known for its reliability and versatility in various electronic applications. The BC817-25QB-QZ is packaged in a DFN1110D-3 (SOT8015) surface-mount device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Package/Case DFN1110D-3 (SOT8015)
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100 mA, 1 V
Power - Max 350 mW
Frequency - Transition 100 MHz
Operating Temperature -55°C to 150°C
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
RoHS Compliance Yes

Key Features

  • High Current Capability: The BC817-25QB-QZ can handle a maximum collector current of 500 mA, making it suitable for applications requiring moderate to high current levels.
  • High Voltage Rating: With a collector-emitter voltage rating of 45 V, this transistor is robust and can handle a wide range of voltage conditions.
  • Low Vce Saturation: The transistor has a low Vce saturation voltage of 700 mV, which is beneficial for reducing power losses in switching and amplification applications.
  • High DC Current Gain: The minimum DC current gain (hFE) of 160 at 100 mA and 1 V ensures reliable amplification and switching performance.
  • Compact Packaging: The DFN1110D-3 package is compact and suitable for surface mount technology (SMT), making it ideal for modern, space-efficient designs.
  • AEC-Q101 Qualified: This transistor is qualified to the AEC-Q101 standard, ensuring its reliability and suitability for automotive and other demanding applications.

Applications

The BC817-25QB-QZ is versatile and can be used in a variety of applications across different industries:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive systems, including power management, sensor interfaces, and control circuits.
  • Industrial Control: It can be used in industrial control systems for switching and amplification tasks, such as in motor control, power supplies, and signal processing.
  • Consumer Electronics: The transistor is also used in consumer electronics for general-purpose switching and amplification, such as in audio amplifiers, power supplies, and other electronic devices.
  • Power Management: Its high current and voltage ratings make it suitable for power management circuits, including voltage regulators and power switches.

Q & A

  1. What is the maximum collector current of the BC817-25QB-QZ?

    The maximum collector current is 500 mA.

  2. What is the collector-emitter breakdown voltage of the BC817-25QB-QZ?

    The collector-emitter breakdown voltage is 45 V.

  3. What is the minimum DC current gain (hFE) of the BC817-25QB-QZ?

    The minimum DC current gain (hFE) is 160 at 100 mA and 1 V.

  4. What is the operating temperature range of the BC817-25QB-QZ?

    The operating temperature range is -55°C to 150°C.

  5. Is the BC817-25QB-QZ RoHS compliant?

    Yes, the BC817-25QB-QZ is RoHS compliant.

  6. What is the package type of the BC817-25QB-QZ?

    The package type is DFN1110D-3 (SOT8015).

  7. What is the qualification standard for the BC817-25QB-QZ?

    The transistor is qualified to the AEC-Q101 standard.

  8. What are some common applications of the BC817-25QB-QZ?

    Common applications include automotive systems, industrial control, consumer electronics, and power management circuits.

  9. What is the maximum power dissipation of the BC817-25QB-QZ?

    The maximum power dissipation is 350 mW.

  10. What is the transition frequency of the BC817-25QB-QZ?

    The transition frequency is 100 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.04
2,223

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
PBSS4021NX,115
PBSS4021NX,115
Nexperia USA Inc.
TRANS NPN 20V 7A SOT89
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74AUP1G157GM-Q100X
74AUP1G157GM-Q100X
Nexperia USA Inc.
IC MULTIPLX 1 X 2:1 6XSON/SOT886