Overview
The STS4DNF60L is a high-performance N-Channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II family, which utilizes a unique 'single feature size' strip-based process. This technology enhances the device's electrical characteristics, making it suitable for a variety of power management applications. The MOSFET is housed in an SO-8 package, which is compact and suitable for surface mount assembly, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 60 V |
| RDS(on) (On-State Resistance) | 0.045 Ω (typical at VGS = 10 V) |
| ID (Continuous Drain Current) | 4 A |
| PD (Power Dissipation) | 2 W |
| VGS(th) (Threshold Voltage) | 1.5 V to 3.5 V |
| Package | SO-8 |
| Operating Temperature Range | -55°C to 150°C |
Key Features
- Low on-state resistance (RDS(on)) of 0.045 Ω, reducing power losses and improving efficiency.
- High continuous drain current (ID) of 4 A, suitable for demanding power applications.
- Compact SO-8 package, ideal for surface mount assembly and space-constrained designs.
- Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environmental conditions.
- Low gate charge (Qg) and low input capacitance, facilitating fast switching times and reducing switching losses.
Applications
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, including battery management and power distribution.
- Industrial control and automation.
- Consumer electronics, such as power adapters and chargers.
Q & A
- What is the maximum drain-source voltage (VDS) of the STS4DNF60L?
The maximum drain-source voltage (VDS) is 60 V. - What is the typical on-state resistance (RDS(on)) of the STS4DNF60L?
The typical on-state resistance (RDS(on)) is 0.045 Ω at VGS = 10 V. - What is the continuous drain current (ID) of the STS4DNF60L?
The continuous drain current (ID) is 4 A. - What is the power dissipation (PD) of the STS4DNF60L?
The power dissipation (PD) is 2 W. - What package type is the STS4DNF60L available in?
The STS4DNF60L is available in an SO-8 package. - What is the operating temperature range of the STS4DNF60L?
The operating temperature range is from -55°C to 150°C. - What are some typical applications of the STS4DNF60L?
Typical applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics. - How does the STripFET™ II process benefit the STS4DNF60L?
The STripFET™ II process enhances the electrical characteristics of the MOSFET, such as lower on-state resistance and faster switching times. - Is the STS4DNF60L suitable for high-frequency applications?
Yes, the low gate charge and input capacitance make it suitable for high-frequency applications. - Where can I find detailed specifications and datasheets for the STS4DNF60L?
Detailed specifications and datasheets can be found on the STMicroelectronics official website and other authorized distributors like Digi-Key and Future Electronics.
