NX3020NAKV,115
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Nexperia USA Inc. NX3020NAKV,115

Manufacturer No:
NX3020NAKV,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 200MA SOT666
Delivery:
Payment:
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Product Introduction

Overview

The NX3020NAKV,115 is a high-performance Dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes advanced Trench MOSFET technology and is packaged in a compact and efficient SOT666 Surface-Mounted Device (SMD) plastic package. The NX3020NAKV,115 is designed for reliability and exceptional power handling capabilities, making it suitable for various electronic applications such as power management, battery charging, and motor control systems.

Key Specifications

Type NumberChannel TypeNr of TransistorsVDS [max] (V)
NX3020NAKVN230
VGS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)
204500520013000
Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)
1500.20.060.34
Ptot [max] (W)VGSth [typ] (V)Ciss [typ] (pF)Coss [typ] (pF)
0.261.2132.6

Key Features

  • Improved thermal performance
  • Compact package design (SOT666)
  • Rugged construction
  • Silicon gate oxide isolation

Applications

  • Signal conditioning
  • Amplification
  • Noise filtering
  • Power management
  • Battery charging
  • Motor control systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3020NAKV,115?
    The maximum drain-source voltage (VDS) is 30 V.
  2. How many transistors are in the NX3020NAKV,115?
    The NX3020NAKV,115 contains 2 N-channel transistors.
  3. What is the maximum continuous drain current (ID) of the NX3020NAKV,115?
    The maximum continuous drain current (ID) is 0.2 A.
  4. What is the typical threshold voltage (VGSth) of the NX3020NAKV,115?
    The typical threshold voltage (VGSth) is 1.2 V.
  5. What is the maximum junction temperature (Tj) of the NX3020NAKV,115?
    The maximum junction temperature (Tj) is 150 °C.
  6. What package type is used for the NX3020NAKV,115?
    The NX3020NAKV,115 is packaged in a SOT666 Surface-Mounted Device (SMD) plastic package.
  7. Is the NX3020NAKV,115 RoHS compliant?
    Yes, the NX3020NAKV,115 is RoHS compliant.
  8. What are some typical applications of the NX3020NAKV,115?
    Typical applications include signal conditioning, amplification, noise filtering, power management, battery charging, and motor control systems.
  9. What is the maximum total power dissipation (Ptot) of the NX3020NAKV,115?
    The maximum total power dissipation (Ptot) is 0.26 W.
  10. What is the typical input capacitance (Ciss) of the NX3020NAKV,115?
    The typical input capacitance (Ciss) is 13 pF.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:200mA
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:13pF @ 10V
Power - Max:375mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Same Series
NX3020NAKV,115
NX3020NAKV,115
MOSFET 2N-CH 30V 200MA SOT666

Similar Products

Part Number NX3020NAKV,115 NX3020NAKS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 200mA 180mA
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.44nC @ 4.5V 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V 13pF @ 10V
Power - Max 375mW 375mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-666 6-TSSOP

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