NX3020NAKV,115
  • Share:

Nexperia USA Inc. NX3020NAKV,115

Manufacturer No:
NX3020NAKV,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 200MA SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3020NAKV,115 is a high-performance Dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes advanced Trench MOSFET technology and is packaged in a compact and efficient SOT666 Surface-Mounted Device (SMD) plastic package. The NX3020NAKV,115 is designed for reliability and exceptional power handling capabilities, making it suitable for various electronic applications such as power management, battery charging, and motor control systems.

Key Specifications

Type NumberChannel TypeNr of TransistorsVDS [max] (V)
NX3020NAKVN230
VGS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)
204500520013000
Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)
1500.20.060.34
Ptot [max] (W)VGSth [typ] (V)Ciss [typ] (pF)Coss [typ] (pF)
0.261.2132.6

Key Features

  • Improved thermal performance
  • Compact package design (SOT666)
  • Rugged construction
  • Silicon gate oxide isolation

Applications

  • Signal conditioning
  • Amplification
  • Noise filtering
  • Power management
  • Battery charging
  • Motor control systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3020NAKV,115?
    The maximum drain-source voltage (VDS) is 30 V.
  2. How many transistors are in the NX3020NAKV,115?
    The NX3020NAKV,115 contains 2 N-channel transistors.
  3. What is the maximum continuous drain current (ID) of the NX3020NAKV,115?
    The maximum continuous drain current (ID) is 0.2 A.
  4. What is the typical threshold voltage (VGSth) of the NX3020NAKV,115?
    The typical threshold voltage (VGSth) is 1.2 V.
  5. What is the maximum junction temperature (Tj) of the NX3020NAKV,115?
    The maximum junction temperature (Tj) is 150 °C.
  6. What package type is used for the NX3020NAKV,115?
    The NX3020NAKV,115 is packaged in a SOT666 Surface-Mounted Device (SMD) plastic package.
  7. Is the NX3020NAKV,115 RoHS compliant?
    Yes, the NX3020NAKV,115 is RoHS compliant.
  8. What are some typical applications of the NX3020NAKV,115?
    Typical applications include signal conditioning, amplification, noise filtering, power management, battery charging, and motor control systems.
  9. What is the maximum total power dissipation (Ptot) of the NX3020NAKV,115?
    The maximum total power dissipation (Ptot) is 0.26 W.
  10. What is the typical input capacitance (Ciss) of the NX3020NAKV,115?
    The typical input capacitance (Ciss) is 13 pF.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:200mA
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:13pF @ 10V
Power - Max:375mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
0 Remaining View Similar

In Stock

$0.42
142

Please send RFQ , we will respond immediately.

Same Series
NX3020NAKV,115
NX3020NAKV,115
MOSFET 2N-CH 30V 200MA SOT666

Similar Products

Part Number NX3020NAKV,115 NX3020NAKS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 200mA 180mA
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.44nC @ 4.5V 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V 13pF @ 10V
Power - Max 375mW 375mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-666 6-TSSOP

Related Product By Categories

PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
FDME1024NZT
FDME1024NZT
onsemi
MOSFET 2N-CH 20V 3.8A 6-MICROFET
NX3008NBKS,115
NX3008NBKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.35A 6TSSOP
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
BUK9K29-100E,115
BUK9K29-100E,115
Nexperia USA Inc.
MOSFET 2N-CH 100V 30A LFPAK56D
FDG6317NZ
FDG6317NZ
onsemi
MOSFET 2N-CH 20V 0.7A SC70-6
STL8DN6LF6AG
STL8DN6LF6AG
STMicroelectronics
MOSFET N-CH 60V 32A POWERFLAT
STL15DN4F5
STL15DN4F5
STMicroelectronics
MOSFET 2N-CH 40V 60A POWERFLAT
CSD88584Q5DC
CSD88584Q5DC
Texas Instruments
MOSFET 2 N-CH 40V 22-VSON-CLIP
2N7002K36
2N7002K36
Rectron USA
MOSFET 2 N-CH 60V 250MA SOT23-6
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
ECH8667-TL-HX
ECH8667-TL-HX
onsemi
MOSFET 2P-CH 30V 5.5A ECH8

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
PDZ20BF
PDZ20BF
Nexperia USA Inc.
DIODE ZENER 20.39V 400MW SOD323
2N7002P,235
2N7002P,235
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74VHC245PW,118
74VHC245PW,118
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20TSSOP