NTMFD4902NFT1G
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onsemi NTMFD4902NFT1G

Manufacturer No:
NTMFD4902NFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 8DFN
Delivery:
Payment:
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iso45001
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iso13485

Product Introduction

Overview

The NTMFD4902NFT1G is a dual N-Channel power MOSFET produced by onsemi, designed to offer high performance and reliability in various electronic applications. This component integrates two N-Channel MOSFETs with an integrated Schottky diode, making it suitable for applications requiring efficient power management and low power losses.

Key Specifications

Parameter Value
Minimum Operating Temperature -55°C
Maximum Operating Temperature +150°C
Power Dissipation (Pd) 3.45 W
Channel Mode Enhancement
FET Type 2 N-Channel (Dual) with Schottky
Drain to Source Voltage (Vdss) 30V
FET Feature Logic Level Gate
Package 8-DFN (5x6)

Key Features

  • Dual N-Channel MOSFET configuration with integrated Schottky diodes for reduced power losses and improved efficiency.
  • Logic Level Gate feature for easy control and compatibility with various logic circuits.
  • Wide operating temperature range from -55°C to +150°C, making it suitable for harsh environments.
  • High power dissipation capability of 3.45 W.
  • Compact 8-DFN (5x6) package for space-efficient designs.

Applications

  • Power management in automotive systems, including battery management and motor control.
  • Industrial power supplies and DC-DC converters.
  • Consumer electronics requiring efficient power switching, such as in audio amplifiers and power adapters.
  • Aerospace and defense applications where high reliability and temperature stability are crucial.

Q & A

  1. What is the NTMFD4902NFT1G?

    The NTMFD4902NFT1G is a dual N-Channel power MOSFET with integrated Schottky diodes, produced by onsemi.

  2. What is the maximum operating temperature of the NTMFD4902NFT1G?

    The maximum operating temperature is +150°C.

  3. What is the power dissipation capability of the NTMFD4902NFT1G?

    The power dissipation capability is 3.45 W.

  4. What type of gate does the NTMFD4902NFT1G have?

    The NTMFD4902NFT1G has a logic level gate.

  5. What is the package type of the NTMFD4902NFT1G?

    The package type is 8-DFN (5x6).

  6. What are some common applications of the NTMFD4902NFT1G?

    Common applications include automotive systems, industrial power supplies, consumer electronics, and aerospace and defense systems.

  7. What is the drain to source voltage (Vdss) of the NTMFD4902NFT1G?

    The drain to source voltage (Vdss) is 30V.

  8. Is the NTMFD4902NFT1G suitable for harsh environments?

    Yes, it is suitable for harsh environments due to its wide operating temperature range from -55°C to +150°C.

  9. What are the benefits of the integrated Schottky diodes in the NTMFD4902NFT1G?

    The integrated Schottky diodes reduce power losses and improve efficiency in the MOSFET.

  10. Is the NTMFD4902NFT1G currently in production?

    No, the NTMFD4902NFT1G is listed as obsolete on some supplier websites.

Product Attributes

FET Type:2 N-Channel (Dual), Schottky
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10.3A, 13.3A
Rds On (Max) @ Id, Vgs:6.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1150pF @ 15V
Power - Max:1.1W, 1.16W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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Same Series
NTMFD4902NFT3G
NTMFD4902NFT3G
MOSFET 2N-CH 30V 8DFN

Similar Products

Part Number NTMFD4902NFT1G NTMFD4902NFT3G NTMFD4901NFT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual), Schottky 2 N-Channel (Dual), Schottky 2 N-Channel (Dual), Schottky
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 10.3A, 13.3A 10.3A, 13.3A 10.3A, 17.9A
Rds On (Max) @ Id, Vgs 6.5mOhm @ 10A, 10V 6.5mOhm @ 10A, 10V 6.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V 9.7nC @ 4.5V 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V 1150pF @ 15V 1150pF @ 15V
Power - Max 1.1W, 1.16W 1.1W, 1.16W 1.1W, 1.2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

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