BUK9K52-60E,115
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Nexperia USA Inc. BUK9K52-60E,115

Manufacturer No:
BUK9K52-60E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 16A LFPAK56D
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK9K52-60E,115 is a high-performance MOSFET array produced by Nexperia USA Inc. This component is part of Nexperia's TrenchMOS™ series, designed for automotive and other demanding applications. It features a dual 2 N-channel configuration, making it suitable for a variety of power management and switching tasks. The device is housed in the LFPAK56D package, which is known for its thermal performance and compact size.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)60V
Continuous Drain Current (Id) @ 25°C16A
Maximum Power Dissipation32W
Threshold Voltage (Vgs(th)) @ Id2.1V @ 1mA
On-Resistance (Rds On) @ Id, Vgs32 mOhm @ 5A, 10V
Package TypeLFPAK56D (SOT-1205, 8-LFPAK56)
Operating Temperature Range-55°C to 175°C (TJ)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) @ Vds1081pF @ 25V
Gate Charge (Qg) @ Vgs14.2nC @ 10V

Key Features

  • Dual 2 N-channel MOSFET configuration in a single LFPAK56D package, enhancing thermal performance and reducing board space.
  • High continuous drain current of 16A and maximum power dissipation of 32W, making it suitable for high-power applications.
  • Low on-resistance (Rds On) of 32 mOhm at 5A and 10V, reducing energy losses and improving efficiency.
  • Logic level gate, allowing for easy control from standard logic circuits.
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
  • Operating temperature range from -55°C to 175°C, suitable for thermally demanding environments.

Applications

The BUK9K52-60E,115 is designed for use in various high-power and thermally demanding applications, including:

  • Automotive systems: Such as power steering, braking systems, and other high-current applications.
  • Industrial power management: Including motor control, power supplies, and DC-DC converters.
  • Renewable energy systems: Solar and wind power systems that require high reliability and efficiency.
  • Consumer electronics: High-power devices such as gaming consoles, servers, and other high-performance electronics.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9K52-60E,115?
    The maximum drain to source voltage (Vdss) is 60V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 16A.
  3. What is the maximum power dissipation of the BUK9K52-60E,115?
    The maximum power dissipation is 32W.
  4. What is the threshold voltage (Vgs(th)) of the MOSFET?
    The threshold voltage (Vgs(th)) is 2.1V at 1mA.
  5. What is the on-resistance (Rds On) of the MOSFET?
    The on-resistance (Rds On) is 32 mOhm at 5A and 10V.
  6. What package type is used for the BUK9K52-60E,115?
    The package type is LFPAK56D (SOT-1205, 8-LFPAK56).
  7. What is the operating temperature range of the BUK9K52-60E,115?
    The operating temperature range is from -55°C to 175°C (TJ).
  8. Is the BUK9K52-60E,115 lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  9. What is the input capacitance (Ciss) of the MOSFET?
    The input capacitance (Ciss) is 1081pF at 25V.
  10. What is the gate charge (Qg) of the MOSFET?
    The gate charge (Qg) is 14.2nC at 10V.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:16A
Rds On (Max) @ Id, Vgs:49mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:725pF @ 25V
Power - Max:32W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-1205, 8-LFPAK56
Supplier Device Package:LFPAK56D
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