BSS138DWK-13
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Diodes Incorporated BSS138DWK-13

Manufacturer No:
BSS138DWK-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET BVDSS: 41V~60V SOT363 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138DWK-13 is a 50V N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET features low on-resistance, low input capacitance, and fast switching speed, which are crucial for various electronic systems requiring efficient power handling.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 50 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 310 mA
Maximum Continuous Body Diode Forward Current IS 310 mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 0.9 A
On-State Resistance (VGS = 10V, ID = 200mA) RDS(ON) 2.6 Ω
Package SOT363
Package Material Molded Plastic, “Green” Molding Compound
Moisture Sensitivity Level 1 per J-STD-020
Terminals Matte Tin Finish Annealed over Alloy 42 Leadframe

Key Features

  • Low On-Resistance: Minimized on-state resistance for efficient power handling.
  • Low Input Capacitance: Reduces the capacitance at the input, enhancing switching performance.
  • Fast Switching Speed: Ensures rapid switching times, ideal for high-frequency applications.
  • ESD Protected Gate: Provides protection against electrostatic discharge.
  • Totally Lead-Free & Fully RoHS Compliant: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
  • Halogen and Antimony Free: “Green” device, environmentally friendly.

Applications

  • High Efficiency Power Management: Suitable for applications requiring low on-state resistance and fast switching.
  • Load Switching: Ideal for load switching applications due to its low on-resistance and fast switching speed.
  • Automotive Applications: Qualified to AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.
  • Small Servo Motor Control: Can be used in controlling small servo motors due to its low voltage and current handling capabilities.
  • Power MOSFET Gate Drivers: Suitable for driving power MOSFET gates in various electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the BSS138DWK-13 MOSFET?

    The maximum drain-source voltage (VDSS) is 50V.

  2. What is the continuous drain current at VGS = 10V and TA = +25°C?

    The continuous drain current (ID) is 310mA.

  3. What is the on-state resistance at VGS = 10V and ID = 200mA?

    The on-state resistance (RDS(ON)) is 2.6Ω.

  4. Is the BSS138DWK-13 MOSFET RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  5. What is the package type of the BSS138DWK-13?

    The package type is SOT363.

  6. What are the key features of the BSS138DWK-13 MOSFET?

    Key features include low on-resistance, low input capacitance, fast switching speed, and ESD protected gate.

  7. What are some common applications of the BSS138DWK-13 MOSFET?

    Common applications include high efficiency power management, load switching, automotive applications, small servo motor control, and power MOSFET gate drivers.

  8. Is the BSS138DWK-13 suitable for automotive applications?

    Yes, it is qualified to AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

  9. What is the moisture sensitivity level of the BSS138DWK-13?

    The moisture sensitivity level is Level 1 per J-STD-020.

  10. What is the thermal resistance, junction to ambient, of the BSS138DWK-13?

    The thermal resistance, junction to ambient (RθJA), is 371°C/W.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Rds On (Max) @ Id, Vgs:2.6Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:22pF @ 25V
Power - Max:330mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Similar Products

Part Number BSS138DWK-13 BSS138DWQ-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 50V 50V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 200mA
Rds On (Max) @ Id, Vgs 2.6Ohm @ 200mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 10V -
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V 50pF @ 10V
Power - Max 330mW 200mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

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