Overview
The NVJD5121NT1G-M06 is a dual N-channel power MOSFET produced by onsemi, designed for low power applications. This device is particularly suited for automotive use, as it is AEC-Q101 qualified, ensuring it meets the stringent standards required for automotive electronics. The MOSFET features a drain-to-source voltage (Vdss) of 60V and a maximum continuous drain current of 295mA. It also includes ESD protection and operates at logic level, making it versatile for various circuit designs.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-to-Source Voltage (Vdss) | 60V |
| Maximum Continuous Drain Current | 295mA |
| On-Resistance (RDS(on)) | 1.6 Ω |
| Package Type | SC−88 |
| ESD Protection | Yes |
| Gate Threshold Voltage | Logic Level |
| Maximum Power Dissipation | 250mW (Ta) |
Key Features
- Dual N-channel configuration for enhanced functionality.
- Low on-resistance (RDS(on)) of 1.6 Ω for efficient power handling.
- Logic level gate threshold voltage for easy integration with digital circuits.
- ESD protection to safeguard against electrostatic discharge.
- AEC-Q101 qualified, ensuring reliability and compliance with automotive standards.
- Compact SC−88 package, ideal for space-constrained designs.
Applications
The NVJD5121NT1G-M06 is primarily used in automotive applications due to its AEC-Q101 qualification. It is suitable for various low power applications, including:
- Automotive electronics such as body control modules, lighting systems, and infotainment systems.
- Industrial control systems requiring reliable and efficient power switching.
- Consumer electronics where compact, low-power MOSFETs are needed.
Q & A
- What is the maximum drain-to-source voltage of the NVJD5121NT1G-M06?
The maximum drain-to-source voltage (Vdss) is 60V.
- What is the maximum continuous drain current of this MOSFET?
The maximum continuous drain current is 295mA.
- Does the NVJD5121NT1G-M06 have ESD protection?
Yes, it includes ESD protection.
- What is the on-resistance (RDS(on)) of this MOSFET?
The on-resistance (RDS(on)) is 1.6 Ω.
- What package type is used for the NVJD5121NT1G-M06?
The package type is SC−88.
- Is the NVJD5121NT1G-M06 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified.
- What is the maximum power dissipation of this MOSFET?
The maximum power dissipation is 250mW (Ta).
- What are the typical applications for the NVJD5121NT1G-M06?
It is typically used in automotive electronics, industrial control systems, and consumer electronics requiring low power MOSFETs.
- Does the NVJD5121NT1G-M06 operate at logic level?
Yes, it operates at logic level.
- What is the configuration of the NVJD5121NT1G-M06?
It is a dual N-channel MOSFET.
