FDG6335N
  • Share:

onsemi FDG6335N

Manufacturer No:
FDG6335N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.7A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6335N is a PowerTrench® N-Channel MOSFET designed and manufactured by onsemi. This component is specifically engineered to enhance the efficiency of DC/DC converters, whether using synchronous or conventional switching PWM controllers. The FDG6335N is optimized for compact switching regulators, featuring extremely low RDS(ON) and gate charge (QG) in a small, industry-standard SC70-6 surface mount package.

Key Specifications

Parameter Ratings Units
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±12 V
Continuous Drain Current (ID) 0.7 A
Pulsed Drain Current (ID) 2.1 A
Power Dissipation (PD) 300 mW
On-Resistance (RDS(ON)) @ VGS = 4.5V 300 mΩ
On-Resistance (RDS(ON)) @ VGS = 2.5V 400 mΩ
Gate Charge (QG) @ VGS = 4.5V 1.4 nC nC
Threshold Voltage (VGS(th)) @ ID = 250μA 1.5 V V
Input Capacitance (Ciss) @ VDS = 10V 113 pF pF
Turn On Delay Time 5 ns ns
Turn Off Delay Time 9 ns ns
Rise Time 7 ns ns
Fall Time 7 ns ns
Operating Temperature -55 to 150°C °C
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (1.1 nC typical)
  • Compact industry standard SC70-6 surface mount package
  • Logic level gate
  • Low on-resistance: 300 mΩ @ VGS = 4.5V and 400 mΩ @ VGS = 2.5V
  • High efficiency in DC/DC converters using synchronous or conventional switching PWM controllers

Applications

  • DC/DC converters
  • Power management
  • Load switches

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDG6335N MOSFET?

    The maximum drain-source voltage (VDSS) of the FDG6335N MOSFET is 20 V.

  2. What is the continuous drain current (ID) rating of the FDG6335N?

    The continuous drain current (ID) rating of the FDG6335N is 0.7 A.

  3. What is the typical gate charge (QG) of the FDG6335N?

    The typical gate charge (QG) of the FDG6335N is 1.4 nC at VGS = 4.5V.

  4. What is the on-resistance (RDS(ON)) of the FDG6335N at VGS = 4.5V?

    The on-resistance (RDS(ON)) of the FDG6335N at VGS = 4.5V is 300 mΩ.

  5. What is the threshold voltage (VGS(th)) of the FDG6335N?

    The threshold voltage (VGS(th)) of the FDG6335N is 1.5 V at ID = 250μA.

  6. What is the input capacitance (Ciss) of the FDG6335N at VDS = 10V?

    The input capacitance (Ciss) of the FDG6335N at VDS = 10V is 113 pF.

  7. What are the typical turn-on and turn-off delay times of the FDG6335N?

    The typical turn-on delay time is 5 ns, and the turn-off delay time is 9 ns.

  8. What is the operating temperature range of the FDG6335N?

    The operating temperature range of the FDG6335N is -55 to 150°C.

  9. What is the moisture sensitivity level (MSL) of the FDG6335N?

    The moisture sensitivity level (MSL) of the FDG6335N is 1 (Unlimited).

  10. In what package is the FDG6335N available?

    The FDG6335N is available in a compact industry standard SC70-6 surface mount package.

  11. What are some common applications of the FDG6335N MOSFET?

    The FDG6335N is commonly used in DC/DC converters, power management, and load switches.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:700mA
Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
0 Remaining View Similar

In Stock

$0.55
517

Please send RFQ , we will respond immediately.

Related Product By Categories

NX3020NAKS,115
NX3020NAKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 180MA 6TSSOP
FDME1024NZT
FDME1024NZT
onsemi
MOSFET 2N-CH 20V 3.8A 6-MICROFET
FDMC8200S
FDMC8200S
onsemi
MOSFET 2N-CH 30V 6A/8.5A 8MLP
CSD88537ND
CSD88537ND
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
2N7002VC-7
2N7002VC-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
CSD88537NDT
CSD88537NDT
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
BUK7K6R2-40EX
BUK7K6R2-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
2N7002DWK-13
2N7002DWK-13
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
NTZD3154NT2G
NTZD3154NT2G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
NDC7002N_SB9G007
NDC7002N_SB9G007
onsemi
MOSFET 2N-CH 50V 0.51A 6-SSOT

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN