FDG6335N
  • Share:

onsemi FDG6335N

Manufacturer No:
FDG6335N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.7A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6335N is a PowerTrench® N-Channel MOSFET designed and manufactured by onsemi. This component is specifically engineered to enhance the efficiency of DC/DC converters, whether using synchronous or conventional switching PWM controllers. The FDG6335N is optimized for compact switching regulators, featuring extremely low RDS(ON) and gate charge (QG) in a small, industry-standard SC70-6 surface mount package.

Key Specifications

Parameter Ratings Units
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±12 V
Continuous Drain Current (ID) 0.7 A
Pulsed Drain Current (ID) 2.1 A
Power Dissipation (PD) 300 mW
On-Resistance (RDS(ON)) @ VGS = 4.5V 300 mΩ
On-Resistance (RDS(ON)) @ VGS = 2.5V 400 mΩ
Gate Charge (QG) @ VGS = 4.5V 1.4 nC nC
Threshold Voltage (VGS(th)) @ ID = 250μA 1.5 V V
Input Capacitance (Ciss) @ VDS = 10V 113 pF pF
Turn On Delay Time 5 ns ns
Turn Off Delay Time 9 ns ns
Rise Time 7 ns ns
Fall Time 7 ns ns
Operating Temperature -55 to 150°C °C
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (1.1 nC typical)
  • Compact industry standard SC70-6 surface mount package
  • Logic level gate
  • Low on-resistance: 300 mΩ @ VGS = 4.5V and 400 mΩ @ VGS = 2.5V
  • High efficiency in DC/DC converters using synchronous or conventional switching PWM controllers

Applications

  • DC/DC converters
  • Power management
  • Load switches

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDG6335N MOSFET?

    The maximum drain-source voltage (VDSS) of the FDG6335N MOSFET is 20 V.

  2. What is the continuous drain current (ID) rating of the FDG6335N?

    The continuous drain current (ID) rating of the FDG6335N is 0.7 A.

  3. What is the typical gate charge (QG) of the FDG6335N?

    The typical gate charge (QG) of the FDG6335N is 1.4 nC at VGS = 4.5V.

  4. What is the on-resistance (RDS(ON)) of the FDG6335N at VGS = 4.5V?

    The on-resistance (RDS(ON)) of the FDG6335N at VGS = 4.5V is 300 mΩ.

  5. What is the threshold voltage (VGS(th)) of the FDG6335N?

    The threshold voltage (VGS(th)) of the FDG6335N is 1.5 V at ID = 250μA.

  6. What is the input capacitance (Ciss) of the FDG6335N at VDS = 10V?

    The input capacitance (Ciss) of the FDG6335N at VDS = 10V is 113 pF.

  7. What are the typical turn-on and turn-off delay times of the FDG6335N?

    The typical turn-on delay time is 5 ns, and the turn-off delay time is 9 ns.

  8. What is the operating temperature range of the FDG6335N?

    The operating temperature range of the FDG6335N is -55 to 150°C.

  9. What is the moisture sensitivity level (MSL) of the FDG6335N?

    The moisture sensitivity level (MSL) of the FDG6335N is 1 (Unlimited).

  10. In what package is the FDG6335N available?

    The FDG6335N is available in a compact industry standard SC70-6 surface mount package.

  11. What are some common applications of the FDG6335N MOSFET?

    The FDG6335N is commonly used in DC/DC converters, power management, and load switches.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:700mA
Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
0 Remaining View Similar

In Stock

$0.55
517

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS138PS,115
BSS138PS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
NTZD3152PT1G
NTZD3152PT1G
onsemi
MOSFET 2P-CH 20V 430MA SOT563
IRF7341TRPBF
IRF7341TRPBF
Infineon Technologies
MOSFET 2N-CH 55V 4.7A 8-SOIC
2N7002PS,125
2N7002PS,125
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
BSS138BKS,115
BSS138BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
NVMFD5C466NLWFT1G
NVMFD5C466NLWFT1G
onsemi
MOSFET 2N-CH 40V 52A S08FL
STL15DN4F5
STL15DN4F5
STMicroelectronics
MOSFET 2N-CH 40V 60A POWERFLAT
PSMN035-150B
PSMN035-150B
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR, 5
2N7002DWK-13
2N7002DWK-13
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
NVMFD5873NLT1G
NVMFD5873NLT1G
onsemi
MOSFET 2N-CH 60V 10A SO8FL
EFC6604R-TR
EFC6604R-TR
onsemi
MOSFET 2N-CH 6EFCP
AO3415B
AO3415B
Alpha & Omega Semiconductor Inc.
MOSFET 2P-CH 30V 6A 8-SOIC

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5