FDG6335N
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onsemi FDG6335N

Manufacturer No:
FDG6335N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.7A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6335N is a PowerTrench® N-Channel MOSFET designed and manufactured by onsemi. This component is specifically engineered to enhance the efficiency of DC/DC converters, whether using synchronous or conventional switching PWM controllers. The FDG6335N is optimized for compact switching regulators, featuring extremely low RDS(ON) and gate charge (QG) in a small, industry-standard SC70-6 surface mount package.

Key Specifications

Parameter Ratings Units
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±12 V
Continuous Drain Current (ID) 0.7 A
Pulsed Drain Current (ID) 2.1 A
Power Dissipation (PD) 300 mW
On-Resistance (RDS(ON)) @ VGS = 4.5V 300 mΩ
On-Resistance (RDS(ON)) @ VGS = 2.5V 400 mΩ
Gate Charge (QG) @ VGS = 4.5V 1.4 nC nC
Threshold Voltage (VGS(th)) @ ID = 250μA 1.5 V V
Input Capacitance (Ciss) @ VDS = 10V 113 pF pF
Turn On Delay Time 5 ns ns
Turn Off Delay Time 9 ns ns
Rise Time 7 ns ns
Fall Time 7 ns ns
Operating Temperature -55 to 150°C °C
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (1.1 nC typical)
  • Compact industry standard SC70-6 surface mount package
  • Logic level gate
  • Low on-resistance: 300 mΩ @ VGS = 4.5V and 400 mΩ @ VGS = 2.5V
  • High efficiency in DC/DC converters using synchronous or conventional switching PWM controllers

Applications

  • DC/DC converters
  • Power management
  • Load switches

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDG6335N MOSFET?

    The maximum drain-source voltage (VDSS) of the FDG6335N MOSFET is 20 V.

  2. What is the continuous drain current (ID) rating of the FDG6335N?

    The continuous drain current (ID) rating of the FDG6335N is 0.7 A.

  3. What is the typical gate charge (QG) of the FDG6335N?

    The typical gate charge (QG) of the FDG6335N is 1.4 nC at VGS = 4.5V.

  4. What is the on-resistance (RDS(ON)) of the FDG6335N at VGS = 4.5V?

    The on-resistance (RDS(ON)) of the FDG6335N at VGS = 4.5V is 300 mΩ.

  5. What is the threshold voltage (VGS(th)) of the FDG6335N?

    The threshold voltage (VGS(th)) of the FDG6335N is 1.5 V at ID = 250μA.

  6. What is the input capacitance (Ciss) of the FDG6335N at VDS = 10V?

    The input capacitance (Ciss) of the FDG6335N at VDS = 10V is 113 pF.

  7. What are the typical turn-on and turn-off delay times of the FDG6335N?

    The typical turn-on delay time is 5 ns, and the turn-off delay time is 9 ns.

  8. What is the operating temperature range of the FDG6335N?

    The operating temperature range of the FDG6335N is -55 to 150°C.

  9. What is the moisture sensitivity level (MSL) of the FDG6335N?

    The moisture sensitivity level (MSL) of the FDG6335N is 1 (Unlimited).

  10. In what package is the FDG6335N available?

    The FDG6335N is available in a compact industry standard SC70-6 surface mount package.

  11. What are some common applications of the FDG6335N MOSFET?

    The FDG6335N is commonly used in DC/DC converters, power management, and load switches.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:700mA
Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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