Overview
The NTZD3152PT1G is a dual P-Channel small signal MOSFET produced by onsemi. This device is designed for low-power applications and features ESD protection, making it suitable for a variety of electronic systems. It operates with a maximum drain-to-source voltage of -20 V and a maximum continuous drain current of -430 mA at 25°C. The MOSFET is packaged in a small footprint SOT-563 package, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Channel Type | - | P | - |
| Maximum Continuous Drain Current | ID | -430 mA (at 25°C), -310 mA (at 85°C) | mA |
| Maximum Drain Source Voltage | VDSS | -20 V | V |
| Package Type | - | SOT-563 | - |
| Mounting Type | - | Surface Mount | - |
| Pin Count | - | 6 | - |
| Maximum Drain Source Resistance | RDS(on) | 0.5 Ω (at VGS = -4.5 V), 0.9 Ω (at VGS = -2.5 V) | Ω |
| Channel Mode | - | Enhancement | - |
| Maximum Gate Threshold Voltage | VGS(TH) | -0.45 to -1.0 V | V |
| Maximum Gate Source Voltage | VGS | ±6.0 V | V |
| Maximum Power Dissipation | PD | 250 mW (steady state), 280 mW (pulsed) | mW |
| Maximum Operating Temperature | TJ | -55 to 150 °C | °C |
| Typical Gate Charge @ Vgs | QG(TOT) | 1.7 nC @ VGS = -4.5 V | nC |
| Dimensions | - | Length: 1.7 mm, Width: 1.3 mm, Height: 0.6 mm | mm |
Key Features
- Low RDS(on) improving system efficiency
- Low threshold voltage
- ESD protected gate
- Small footprint (1.6 x 1.6 mm) in SOT-563 package
- Pb-free, halogen-free, and RoHS compliant
Applications
- Load/Power Switches
- Power Supply Converter Circuits
- Battery Management
- Cell Phones, Digital Cameras, PDAs, Pagers, etc.
Q & A
- What is the maximum continuous drain current of the NTZD3152PT1G MOSFET?
The maximum continuous drain current is -430 mA at 25°C and -310 mA at 85°C.
- What is the maximum drain-to-source voltage for this MOSFET?
The maximum drain-to-source voltage is -20 V.
- What package type is used for the NTZD3152PT1G?
The package type is SOT-563.
- Is the NTZD3152PT1G MOSFET RoHS compliant?
- What are the typical applications of the NTZD3152PT1G MOSFET?
The typical applications include load/power switches, power supply converter circuits, battery management, and use in cell phones, digital cameras, PDAs, and pagers.
- What is the maximum gate threshold voltage for this MOSFET?
The maximum gate threshold voltage is -0.45 to -1.0 V.
- What is the maximum power dissipation for the NTZD3152PT1G?
The maximum power dissipation is 250 mW (steady state) and 280 mW (pulsed).
- What are the dimensions of the NTZD3152PT1G package?
The dimensions are 1.7 mm in length, 1.3 mm in width, and 0.6 mm in height.
- Does the NTZD3152PT1G have ESD protection?
- What is the typical gate charge at Vgs = -4.5 V for this MOSFET?
The typical gate charge is 1.7 nC at VGS = -4.5 V.
