Overview
The NTZD3155CT1G is a Complementary Small Signal MOSFET produced by onsemi. This component is designed to operate at 20V and is housed in a compact SOT-563, 6-lead package. It features dual N-Channel and P-Channel FETs, each with a distinct built-in diode, enabling efficient bidirectional current flow and switching capabilities. The MOSFET is equipped with ESD protection and utilizes metal-oxide semiconductor technology, making it suitable for various electronic switching needs. The part is lead-free, halogen-free, and compliant with RoHS, REACH, and ECCN codes, ensuring its suitability for global distribution and use in sensitive applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 20 | V |
| Gate-Source Voltage (VGS) | ±6 | V |
| Maximum Continuous Drain Current (ID) | 540 mA (N-Channel), 430 mA (P-Channel) | A |
| Maximum Drain-Source On Resistance (RDS(on)) | 550 mΩ @ 540 mA, 4.5 V (N-Channel), 900 mΩ @ 430 mA, 4.5 V (P-Channel) | mΩ |
| Maximum Gate-Source Threshold Voltage (VGS(th)) | 1 V @ 250 µA | V |
| Maximum Junction Temperature (TJ) | 150°C | °C |
| Maximum Power Dissipation (PD) | 250 mW | mW |
| Maximum Pulse Drain Current (ID(pulse)) | 1.5 A, 750 mA | A |
| Input Capacitance (Ciss) | 150 pF, 175 pF | pF |
| Total Gate Charge (QG(TOT)) | 2.5 nC | nC |
| Package Type | SOT-563 |
Key Features
- Complementary N and P-Channel FETs: Dual FETs with built-in diodes for efficient bidirectional current flow and switching capabilities.
- ESD Protection: Equipped with ESD protection to enhance reliability in sensitive applications.
- Low On-Resistance: Features low drain-source on resistance (RDS(on)) of 550 mΩ and 900 mΩ for N and P channels, respectively.
- High Efficiency: Utilizes leading trench technology for high efficiency system performance.
- Compact Packaging: Housed in a small SOT-563 package, facilitating surface mounting and integration into various electronic assemblies.
- Environmental Compliance: Lead-free, halogen-free, and compliant with RoHS, REACH, and ECCN codes.
Applications
- Automotive: Suitable for vehicle electronics, sensor interfaces, control modules, and power management systems due to its reliability and compact size.
- Telecommunications: Used in network equipment such as switches, routers, and modems for signal switching and compact circuit designs.
- Computing and Data Storage: Applied in computing hardware, including motherboards and storage systems, to enhance energy efficiency and thermal performance.
- Internet of Things (IoT): Ideal for IoT devices due to its small footprint and efficiency.
- Healthcare: Used in medical devices requiring precise control and high reliability.
- DC-DC Conversion Circuits: Suitable for DC-DC conversion circuits, load/power switching, and single or dual cell Li-Ion battery operated systems.
Q & A
- What is the NTZD3155CT1G?
The NTZD3155CT1G is a Complementary Small Signal MOSFET produced by onsemi, featuring dual N and P-Channel FETs with ESD protection and a compact SOT-563 package.
- What is the maximum drain-source voltage of the NTZD3155CT1G?
The maximum drain-source voltage (VDSS) is 20V.
- What are the maximum continuous drain currents for the N and P channels?
The maximum continuous drain currents are 540 mA for the N-Channel and 430 mA for the P-Channel.
- What is the maximum junction temperature for the NTZD3155CT1G?
The maximum junction temperature (TJ) is 150°C.
- Is the NTZD3155CT1G environmentally compliant?
Yes, it is lead-free, halogen-free, and compliant with RoHS, REACH, and ECCN codes.
- What are some typical applications of the NTZD3155CT1G?
It is used in automotive electronics, telecommunications, computing and data storage, IoT devices, and healthcare applications.
- What is the package type of the NTZD3155CT1G?
The package type is SOT-563.
- Does the NTZD3155CT1G have built-in ESD protection?
Yes, it is equipped with ESD protection.
- What is the maximum power dissipation of the NTZD3155CT1G?
The maximum power dissipation (PD) is 250 mW.
- What are the typical gate-source and gate-drain charges for the NTZD3155CT1G?
The typical gate-source charge (QGS) is 200 pC to 300 pC, and the typical gate-drain charge (QGD) is 350 pC to 400 pC.
