NVMFD5C674NLT1G
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onsemi NVMFD5C674NLT1G

Manufacturer No:
NVMFD5C674NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 42A S08FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFD5C674NLT1G is a dual N-Channel MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and compact packaging. This device is part of onsemi's portfolio of power MOSFETs, known for their reliability and efficiency. The NVMFD5C674NLT1G is housed in an 8-pin DFN (Dual Flat No-Lead) package, measuring 5x6 mm, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Continuous Drain Current)42 A
RDS(on) (On-Resistance)14.4 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage)2.0 - 4.0 V
QG (Total Gate Charge)43 nC (typical at VDS = 40 V, VGS = 10 V)
Ciss (Input Capacitance)1340 pF (typical at VDS = 40 V, VGS = 0 V)
Package8-Pin DFN (5x6 mm)

Key Features

  • Small Footprint: The device is packaged in a compact 5x6 mm DFN package, making it suitable for designs where space is limited.
  • Low RDS(on): With a typical on-resistance of 14.4 mΩ, this MOSFET minimizes conduction losses and enhances overall efficiency.
  • Low QG and Capacitance: The low total gate charge and input capacitance reduce driver losses, making the device more efficient in high-frequency applications.

Applications

The NVMFD5C674NLT1G is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems (e.g., battery management, power steering)
  • Industrial control and automation
  • Renewable energy systems (e.g., solar, wind power)

Q & A

  1. What is the maximum drain-source voltage of the NVMFD5C674NLT1G?
    The maximum drain-source voltage is 60 V.
  2. What is the typical on-resistance of the NVMFD5C674NLT1G?
    The typical on-resistance is 14.4 mΩ at VGS = 10 V.
  3. What is the package type and size of the NVMFD5C674NLT1G?
    The device is packaged in an 8-pin DFN package measuring 5x6 mm.
  4. What are the key features of the NVMFD5C674NLT1G?
    The key features include a small footprint, low RDS(on), and low QG and capacitance.
  5. What are some typical applications for the NVMFD5C674NLT1G?
    Typical applications include power supplies, motor control systems, automotive systems, industrial control, and renewable energy systems.
  6. What is the continuous drain current rating of the NVMFD5C674NLT1G?
    The continuous drain current rating is 42 A.
  7. How does the low QG benefit the performance of the NVMFD5C674NLT1G?
    The low total gate charge reduces driver losses, making the device more efficient in high-frequency applications.
  8. Is the NVMFD5C674NLT1G suitable for use in life support systems or FDA Class 3 medical devices?
    No, the NVMFD5C674NLT1G is not designed or intended for use in life support systems or FDA Class 3 medical devices.
  9. What is the threshold voltage range of the NVMFD5C674NLT1G?
    The threshold voltage range is 2.0 - 4.0 V.
  10. Where can I find detailed specifications and datasheets for the NVMFD5C674NLT1G?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser and RS Components.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs:14.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:640pF @ 25V
Power - Max:3W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Same Series
NVMFD5C674NLWFT1G
NVMFD5C674NLWFT1G
MOSFET 2N-CH 60V 42A S08FL

Similar Products

Part Number NVMFD5C674NLT1G NVMFD5C672NLT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 42A (Tc) 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs 14.4mOhm @ 10A, 10V 11.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 25µA 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V 793pF @ 25V
Power - Max 3W (Ta), 37W (Tc) 3.1W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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