NTJD4001NT1G
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onsemi NTJD4001NT1G

Manufacturer No:
NTJD4001NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.25A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTJD4001NT1G is a small signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by onsemi. This component is designed for use in a variety of electronic circuits where low power consumption and high efficiency are required. The NTJD4001NT1G is packaged in a SOT-363 (SC-70) package, which is a small, surface-mount package suitable for compact and high-density circuit designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)350 mA
RDS(ON) (On-Resistance)1.5 Ω (Typical at VGS = 4.5 V)
PD (Power Dissipation)350 mW
TJ (Junction Temperature)-55 to 150 °C
PackageSOT-363 (SC-70)

Key Features

  • Low On-Resistance: The NTJD4001NT1G features a low RDS(ON) of 1.5 Ω, which minimizes power losses and enhances efficiency.
  • High Current Capability: With a continuous drain current of 350 mA, this MOSFET is suitable for applications requiring moderate current handling.
  • Compact Package: The SOT-363 package is ideal for space-constrained designs, offering a small footprint without compromising performance.
  • Wide Operating Temperature Range: The device operates over a junction temperature range of -55 to 150 °C, making it versatile for various environmental conditions.

Applications

The NTJD4001NT1G is suitable for a range of applications including:

  • Switching and Linear Amplifier Circuits
  • Power Management and Regulation
  • Audio and Video Switching
  • General Purpose Analog and Digital Circuits

Q & A

  1. What is the maximum drain-source voltage of the NTJD4001NT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance of the NTJD4001NT1G?
    The typical on-resistance (RDS(ON)) is 1.5 Ω at VGS = 4.5 V.
  3. What is the continuous drain current rating of the NTJD4001NT1G?
    The continuous drain current (ID) is 350 mA.
  4. What is the package type of the NTJD4001NT1G?
    The package type is SOT-363 (SC-70).
  5. What is the operating junction temperature range of the NTJD4001NT1G?
    The operating junction temperature range is -55 to 150 °C.
  6. Is the NTJD4001NT1G suitable for high-power applications?
    No, it is designed for low to moderate power applications due to its power dissipation limit of 350 mW.
  7. Can the NTJD4001NT1G be used in audio circuits?
    Yes, it can be used in audio and video switching applications.
  8. What is the gate-source voltage rating of the NTJD4001NT1G?
    The gate-source voltage (VGS) rating is ±20 V.
  9. Is the NTJD4001NT1G lead-free?
    Yes, the NTJD4001NT1G is a lead-free component.
  10. Where can I find detailed specifications for the NTJD4001NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Future Electronics.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:250mA
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:33pF @ 5V
Power - Max:272mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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In Stock

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Same Series
NTJD4001NT1G
NTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SOT-363
NVTJD4001NT1G
NVTJD4001NT1G
MOSFET 2N-CH 30V 0.25A SC-88
NTJD4001NT2G
NTJD4001NT2G
MOSFET 2N-CH 30V 0.25A SOT363
NVTJD4001NT2G
NVTJD4001NT2G
MOSFET 2N-CH 30V 0.25A SC-88

Similar Products

Part Number NTJD4001NT1G NTJD4401NT1G NTJD4001NT2G NTJD4001NT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate Standard Standard
Drain to Source Voltage (Vdss) 30V 20V 30V 30V
Current - Continuous Drain (Id) @ 25°C 250mA 630mA 250mA 250mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V 375mOhm @ 630mA, 4.5V 1.5Ohm @ 10mA, 4V 1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 250µA 1.5V @ 100µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V 3nC @ 4.5V 1.3nC @ 5V 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V 46pF @ 20V 33pF @ 5V 33pF @ 5V
Power - Max 272mW 270mW 272mW 272mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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