Overview
The NTMD6P02R2G is a dual P-Channel power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is packaged in a miniature dual SOIC-8 surface mount package, making it ideal for space-constrained designs. It features ultra-low RDS(on) and logic level gate drive, which enhance its performance and efficiency.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage - Continuous | VGS | -12 | V |
| Thermal Resistance - Junction-to-Ambient | RJA | 166 | °C/W |
| Total Power Dissipation @ TA = 25°C | PD | 0.75 | W |
| Continuous Drain Current @ TA = 25°C | ID | -4.8 | A |
| Continuous Drain Current @ TA = 70°C | ID | -3.5 | A |
| Pulsed Drain Current | IDM | -30 | A |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 500 | mJ |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(th) | -0.6 to -1.20 | Vdc |
| Static Drain-to-Source On-State Resistance | RDS(on) | 0.027 to 0.050 | Ω |
Key Features
- Ultra Low RDS(on) for higher efficiency and extended battery life.
- Logic Level Gate Drive for easier integration with logic circuits.
- Miniature dual SOIC-8 surface mount package for compact designs.
- Diode exhibits high speed, soft recovery characteristics.
- Avalanche energy specified for robust operation.
- Pb-Free and RoHS compliant.
- NVMD prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
Applications
The NTMD6P02R2G is suitable for power management in various portable and battery-powered products, including:
- Cellular and cordless telephones.
- PCMCIA cards.
Q & A
- What is the maximum drain-to-source voltage of the NTMD6P02R2G?
The maximum drain-to-source voltage (VDSS) is -20 V.
- What is the continuous drain current at 25°C?
The continuous drain current at 25°C is -4.8 A.
- What is the thermal resistance from junction to ambient?
The thermal resistance from junction to ambient (RJA) is 166 °C/W.
- Is the NTMD6P02R2G Pb-Free and RoHS compliant?
- What are the typical applications of the NTMD6P02R2G?
The NTMD6P02R2G is typically used in power management for portable and battery-powered products such as cellular and cordless telephones, and PCMCIA cards.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(th)) range is from -0.6 to -1.20 Vdc.
- What is the static drain-to-source on-state resistance?
The static drain-to-source on-state resistance (RDS(on)) ranges from 0.027 to 0.050 Ω.
- Does the NTMD6P02R2G have any special certifications for automotive applications?
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C for 10 seconds.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 500 mJ.
