Overview
The NTMD6N02R2G is a power MOSFET array designed by onsemi, featuring an N-channel enhancement mode configuration. This device is packaged in a dual SO-8 (SOIC-8) surface mount package, making it ideal for space-saving designs. The MOSFET array is rated for 20V and can handle a maximum continuous drain current of 6.5A, with an ultra-low RDS(on) for high efficiency. It is particularly suited for applications requiring rapid on-state response and soft recovery characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 20 | V |
| Drain-to-Gate Voltage (VDGR) | 20 | V |
| Gate-to-Source Voltage (VGS) - Continuous | ±12 | V |
| Maximum Continuous Drain Current (ID) | 6.5 | A |
| On-State Resistance (RDS(on)) | [email protected] | mΩ |
| Operating and Storage Temperature Range | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy (EAS) | 360 | mJ |
| Maximum Lead Temperature for Soldering | 260 | °C |
| Typical Rise Time | 35-50 ns | ns |
| Typical Fall Time | 60-80 ns | ns |
| Reverse Recovery Time (trr) | 30 ns | ns |
| Reverse Recovery Stored Charge (QRR) | 0.02 μC | μC |
Key Features
- Ultra low RDS(on) for high efficiency and extended battery life.
- Logic level gate drive for easy integration with digital circuits.
- Miniature dual SOIC-8 surface mount package for space-saving designs.
- Diode exhibits high speed, soft recovery characteristics.
- Avalanche energy specified for robust operation.
- Pb-free package available, compliant with RoHS standards.
- Rapid on-state response and soft recovery for fast switching applications.
Applications
- DC-DC converters.
- Low voltage motor control.
- Power management in portable and battery-powered products, such as computers, printers, cellular and cordless telephones, and PCMCIA cards.
- Smart power management.
- Low standby current applications.
Q & A
- Q: What is the maximum drain-to-source voltage of the NTMD6N02R2G?
A: The maximum drain-to-source voltage (VDSS) is 20V.
- Q: What is the maximum continuous drain current of the NTMD6N02R2G?
A: The maximum continuous drain current (ID) is 6.5A.
- Q: What is the typical on-state resistance (RDS(on)) of the NTMD6N02R2G?
A: The typical on-state resistance (RDS(on)) is [email protected]
- Q: What are the operating and storage temperature ranges for the NTMD6N02R2G?
A: The operating and storage temperature range is -55°C to +150°C.
- Q: Is the NTMD6N02R2G RoHS compliant?
A: Yes, the NTMD6N02R2G is RoHS compliant and Pb-free.
- Q: What are the typical rise and fall times of the NTMD6N02R2G?
A: The typical rise time is 35-50 ns, and the typical fall time is 60-80 ns.
- Q: What is the reverse recovery time (trr) of the NTMD6N02R2G?
A: The reverse recovery time (trr) is 30 ns.
- Q: How can I obtain detailed information about the NTMD6N02R2G, such as application notes and datasheets?
A: You can find comprehensive details, including application notes and datasheets, on the onsemi website or through authorized distributors like Ovaga.
- Q: What is the warranty period for the NTMD6N02R2G purchased from Ovaga?
A: Ovaga offers a 1-year warranty on the NTMD6N02R2G.
- Q: How can I contact Ovaga for support or technical inquiries about the NTMD6N02R2G?
A: You can contact Ovaga via email at [email protected] for any after-sales support or technical inquiries.
