Overview
The NTMD6N03R2G is a dual N-Channel power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This device is packaged in a miniature SOIC-8 surface mount package, which saves board space and is ideal for compact designs. The MOSFET features ultra-low on-resistance, providing higher efficiency and extending battery life in various electronic systems.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | Volts |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Volts |
| Drain Current - Continuous | ID | 6.0 | Amps |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | 30 | Amps |
| Total Power Dissipation @ TA = 25°C | PD | 2.0 | Watts |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Static Drain-to-Source On-State Resistance (VGS = 10 Vdc, ID = 6 Adc) | RDS(on) | 0.024 | Ω |
| Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) | VGS(th) | 1.0 - 1.8 | Vdc |
| Thermal Resistance - Junction-to-Ambient | RθJA | 62.5 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- Designed for use in low voltage, high speed switching applications.
- Ultra-low on-resistance (RDS(on) = 0.024 Ω at VGS = 10 V, ID = 6 A) for higher efficiency and extended battery life.
- Miniature SOIC-8 surface mount package to save board space.
- Diode characterized for use in bridge circuits with high speed and soft recovery.
- AEC Q101 qualified for automotive applications.
- Pb-free and RoHS compliant.
Applications
- DC-DC converters.
- Computers.
- Printers.
- Cellular and cordless phones.
- Disk drives and tape drives.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMD6N03R2G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 volts.
- What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) rating is 6.0 amps.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 6 A?
The typical on-state resistance (RDS(on)) is 0.024 Ω.
- Is the NTMD6N03R2G MOSFET Pb-free and RoHS compliant?
Yes, the NTMD6N03R2G MOSFET is Pb-free and RoHS compliant.
- What are some common applications for the NTMD6N03R2G MOSFET?
Common applications include DC-DC converters, computers, printers, cellular and cordless phones, and disk drives and tape drives.
- What is the operating and storage temperature range for this MOSFET?
The operating and storage temperature range is -55°C to +150°C.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C.
- Is the NTMD6N03R2G AEC Q101 qualified?
Yes, the NTMD6N03R2G (specifically the NVMD6N03R2G) is AEC Q101 qualified for automotive applications.
- What is the thermal resistance - junction-to-ambient (RθJA) for this MOSFET?
The thermal resistance - junction-to-ambient (RθJA) is 62.5 °C/W.
- What package type is the NTMD6N03R2G MOSFET available in?
The NTMD6N03R2G MOSFET is available in a SOIC-8 surface mount package.
