Overview
The NTMD4N03R2G is a dual N-Channel power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This device is packaged in a miniature SO-8 surface mount package, which saves board space and is Pb-Free and RoHS compliant. It is particularly suited for applications requiring high efficiency and extended battery life due to its ultra-low on-resistance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Drain Current - Continuous @ TA = 25°C | ID | 4.0 | A |
| Single Pulse Drain Current (tp ≤ 10 μs) | IDM | 12 | A |
| Total Power Dissipation @ TA = 25°C | PD | 2.0 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Static Drain-to-Source On-State Resistance (VGS = 10 V, ID = 4 A) | RDS(on) | 0.048 Ω | |
| Gate Threshold Voltage (VDS = VGS, ID = 250 μA) | VGS(th) | 1.0 - 1.9 V | |
| Thermal Resistance - Junction-to-Ambient | RθJA | 62.5 °C/W | |
| Maximum Lead Temperature for Soldering Purposes for 10 seconds | TL | 260 °C |
Key Features
- Designed for use in low voltage, high speed switching applications.
- Ultra Low On-Resistance (RDS(on) = 0.048 Ω @ VGS = 10 V, ID = 4 A) for higher efficiency and extended battery life.
- Miniature SO-8 surface mount package to save board space.
- Diode characterized for use in bridge circuits with high speed and soft recovery.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS compliant.
Applications
- DC-DC Converters.
- Computers.
- Printers.
- Cellular and Cordless Phones.
- Disk Drives and Tape Drives.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMD4N03R2G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current (ID) rating at TA = 25°C?
The continuous drain current (ID) rating is 4.0 A.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 4 A?
The typical on-resistance (RDS(on)) is 0.048 Ω.
- What is the operating and storage temperature range for this MOSFET?
The operating and storage temperature range is -55 to +150 °C.
- Is the NTMD4N03R2G Pb-Free and RoHS compliant?
- What are some common applications for the NTMD4N03R2G?
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260 °C for 10 seconds.
- Is the NTMD4N03R2G qualified for automotive applications?
- What is the thermal resistance - junction-to-ambient (RθJA) for this device?
The thermal resistance - junction-to-ambient (RθJA) is 62.5 °C/W.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 1.0 to 1.9 V.
