Overview
The STS8DN3LLH5 is a dual N-channel power MOSFET produced by STMicroelectronics. This device is part of ST's STripFET F8 technology, which features an enhanced trench gate structure. It is packaged in a SO-8 format, making it suitable for a variety of power management applications. The MOSFET is characterized by its low on-resistance (RDS(on)) and high current handling capabilities, making it an efficient choice for power electronics.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 30 V |
| On-Resistance (RDS(on)) | 0.0155 Ω (typical) |
| Drain Current (Id) | 10 A |
| Package | SO-8 |
| Gate Charge (Qg) | See datasheet for detailed values |
| Avalanche Testing | 100% avalanche tested |
| Zener Protection | Zener-protected |
Key Features
The STS8DN3LLH5 features several key advantages that make it a robust choice for power electronics applications:
- Low On-Resistance (RDS(on)): With a typical RDS(on) of 0.0155 Ω, this MOSFET minimizes power losses and enhances efficiency.
- High Current Handling: Capable of handling up to 10 A of drain current, making it suitable for high-power applications.
- Enhanced Trench Gate Structure: Utilizes ST's STripFET F8 technology for improved performance and reliability.
- Zener Protection and Avalanche Testing: The device is Zener-protected and 100% avalanche tested, ensuring robustness against transient conditions.
Applications
The STS8DN3LLH5 is ideal for various power management and conversion applications, including:
- Flyback Converters: Its low on-resistance and high current handling make it suitable for flyback converter designs.
- LED Lighting: The MOSFET's efficiency and robustness are beneficial for LED lighting systems.
- General Power Electronics: It can be used in a wide range of power electronics applications requiring high efficiency and reliability.
Q & A
- What is the voltage rating of the STS8DN3LLH5?
The voltage rating (Vds) of the STS8DN3LLH5 is 30 V. - What is the typical on-resistance (RDS(on)) of the STS8DN3LLH5?
The typical on-resistance (RDS(on)) is 0.0155 Ω. - What is the maximum drain current (Id) of the STS8DN3LLH5?
The maximum drain current (Id) is 10 A. - In what package is the STS8DN3LLH5 available?
The STS8DN3LLH5 is available in a SO-8 package. - Is the STS8DN3LLH5 Zener-protected and avalanche tested?
Yes, the STS8DN3LLH5 is Zener-protected and 100% avalanche tested. - What technology does the STS8DN3LLH5 use?
The STS8DN3LLH5 uses ST's STripFET F8 technology. - What are some typical applications of the STS8DN3LLH5?
The STS8DN3LLH5 is typically used in flyback converters, LED lighting, and general power electronics applications. - Where can I find detailed specifications for the STS8DN3LLH5?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website, Digi-Key, Mouser Electronics, and other authorized distributors. - What are the benefits of using the STS8DN3LLH5 in power electronics?
The benefits include low on-resistance, high current handling, enhanced trench gate structure, and robust protection against transient conditions. - Is the STS8DN3LLH5 suitable for high-power applications?
Yes, the STS8DN3LLH5 is suitable for high-power applications due to its high current handling and low on-resistance.
