Overview
The 2N7002KDW-HF is a high-performance N-Channel Enhancement Mode MOSFET produced by Comchip Technology. This device is packaged in the SOT-363 package, making it suitable for a variety of applications where space is limited. The MOSFET is designed using advanced trench process technology, which ensures ultra-low on-resistance and high density cell design. It is particularly suited for battery-operated systems and other applications requiring low power consumption and high reliability.
Key Specifications
| Parameter | Symbol | Limit | Units |
|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | +20 | V |
| Continuous Drain Current | ID | 115 mA | mA |
| Pulsed Drain Current | IDM | 800 mA | mA |
| Maximum Power Dissipation (TA=25°C) | PD | 200 mW | mW |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +150°C | °C |
| Junction-to Ambient Thermal Resistance (PCB mounted) | RθJA | 625 °C/W | °C/W |
| Gate Threshold Voltage | VGS(th) | 1 - 2.5 V | V |
| Drain-Source On-State Resistance (VGS=4.5V, ID=200mA) | RDS(ON) | 4.0 Ω | Ω |
| Drain-Source On-State Resistance (VGS=10V, ID=500mA) | RDS(ON) | 3.0 Ω | Ω |
Key Features
- Advanced Trench Process Technology: Ensures ultra-low on-resistance and high density cell design.
- Low On-Resistance: RDS(ON) of 3Ω at VGS=10V, ID=500mA and 4Ω at VGS=4.5V, ID=200mA.
- Very Low Leakage Current: In the off condition, making it suitable for battery-operated systems.
- ESD Protected: 2KV HBM (Human Body Model) protection.
- Lead-Free and Halogen-Free: Compliant with EU RoHS 2011/65/EU directive and IEC61249 standard.
- SOT-363 Package: Compact package suitable for space-constrained applications.
Applications
- Battery Operated Systems: Ideal for devices that require low power consumption.
- Solid-State Relays and Drivers: For relays, displays, lamps, solenoids, and memories.
- General Switching Applications: Suitable for various switching roles due to its low on-resistance and high current handling capabilities.
Q & A
- What is the maximum drain-source voltage of the 2N7002KDW-HF MOSFET?
The maximum drain-source voltage is 60V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current is 115 mA.
- What is the typical on-resistance of the 2N7002KDW-HF at VGS=10V and ID=500mA?
The typical on-resistance is 3Ω.
- Is the 2N7002KDW-HF ESD protected?
Yes, it is ESD protected up to 2KV HBM.
- What package type is the 2N7002KDW-HF available in?
The MOSFET is packaged in the SOT-363 package.
- Is the 2N7002KDW-HF compliant with RoHS and halogen-free standards?
Yes, it is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard.
- What are the operating junction and storage temperature ranges for this MOSFET?
The operating junction and storage temperature ranges are -55 to +150°C.
- What is the junction-to-ambient thermal resistance for the 2N7002KDW-HF when PCB mounted?
The junction-to-ambient thermal resistance is 625 °C/W.
- What are some typical applications for the 2N7002KDW-HF MOSFET?
Typical applications include battery-operated systems, solid-state relays, and general switching applications.
- What is the gate threshold voltage range for the 2N7002KDW-HF?
The gate threshold voltage range is 1 to 2.5 V.
