NX3008NBKV,115
  • Share:

Nexperia USA Inc. NX3008NBKV,115

Manufacturer No:
NX3008NBKV,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 400MA SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKV,115 is a dual N-channel Trench MOSFET produced by Nexperia. This component is designed for high-performance applications, particularly in automotive and industrial sectors. It features advanced Trench MOSFET technology, which ensures very fast switching times and low on-resistance. The device is packaged in a SOT666 surface mount package, making it suitable for a variety of modern electronic designs.

Key Specifications

Attribute Value
FET Type Dual N-Channel
No of Channels 2
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max [Rds(on)] 1.4Ω @ Vgs = 4.5V, 2.1Ω @ Vgs = 2.5V
Rated Power Dissipation 0.5W
Gate Charge [Qg] 0.52nC
Gate-Source Voltage-Max [Vgss] 8V
Drain Current [Id] 0.4A
Turn-on Delay Time 15ns
Turn-off Delay Time 69ns
Rise Time 11ns
Fall Time 19ns
Operating Temperature Range -55°C to +150°C
Gate Source Threshold [Vgs(th)] 0.9V
Input Capacitance [Ciss] 34pF
Package Style SOT666
Mounting Method Surface Mount

Key Features

  • Fast Switching Times: The NX3008NBKV,115 features very fast switching times, making it suitable for high-frequency applications.
  • Low Threshold Voltage: With a low gate-source threshold voltage of 0.9V, this MOSFET is easy to drive and efficient in operation.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and reduced on-resistance.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the device's reliability in harsh environments.
  • Compact Package: Packaged in a SOT666 surface mount package, which is compact and suitable for modern PCB designs.

Applications

The NX3008NBKV,115 is versatile and can be used in various applications across different industries, including:

  • Automotive Systems: Despite not being automotive qualified, it can be used in non-automotive specific applications within the automotive sector.
  • Industrial Control Systems: Suitable for use in industrial control systems due to its robust performance and reliability.
  • Power Management: Can be used in power management circuits requiring fast switching and low on-resistance.
  • Consumer Electronics: Applicable in consumer electronics where compact, efficient, and reliable MOSFETs are required.

Q & A

  1. What is the drain-to-source voltage rating of the NX3008NBKV,115?

    The drain-to-source voltage rating is 30V.

  2. How many channels does the NX3008NBKV,115 have?

    The NX3008NBKV,115 is a dual N-channel MOSFET, meaning it has 2 channels.

  3. What is the maximum drain current of the NX3008NBKV,115?

    The maximum drain current is 0.4A.

  4. What is the gate-source threshold voltage of the NX3008NBKV,115?

    The gate-source threshold voltage is 0.9V.

  5. What is the operating temperature range of the NX3008NBKV,115?

    The operating temperature range is -55°C to +150°C.

  6. Is the NX3008NBKV,115 automotive qualified?

    No, the NX3008NBKV,115 is not automotive qualified.

  7. What type of package does the NX3008NBKV,115 use?

    The NX3008NBKV,115 is packaged in a SOT666 surface mount package.

  8. What is the maximum gate-source voltage of the NX3008NBKV,115?

    The maximum gate-source voltage is 8V.

  9. What is the typical gate charge of the NX3008NBKV,115?

    The typical gate charge is 0.52nC.

  10. Does the NX3008NBKV,115 offer ESD protection?

    Yes, the NX3008NBKV,115 offers ESD protection up to 2 kV.

  11. How many devices are in a reel of NX3008NBKV,115?

    A reel of NX3008NBKV,115 contains 4000 devices.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:400mA
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 15V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
0 Remaining View Similar

In Stock

$0.44
1,065

Please send RFQ , we will respond immediately.

Same Series
SIHS90N65E-E3
SIHS90N65E-E3
MOSFET N-CH 650V 87A SUPER247

Similar Products

Part Number NX3008NBKV,115 NX3008PBKV,115 NX3008CBKV,115 NX3008NBKS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Active
FET Type 2 N-Channel (Dual) 2 P-Channel (Dual) N and P-Channel 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 400mA 220mA 400mA, 220mA 350mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V 0.72nC @ 4.5V 0.68nC @ 4.5V 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 15V 46pF @ 15V 50pF @ 15V 50pF @ 15V
Power - Max 500mW 500mW 500mW 445mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-666 SOT-666 SOT-666 6-TSSOP

Related Product By Categories

BSS138DW-7-F
BSS138DW-7-F
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
NTJD1155LT1G
NTJD1155LT1G
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
NX1029X,115
NX1029X,115
Nexperia USA Inc.
MOSFET N/P-CH 60V/50V SOT666
BSS138BKS,115
BSS138BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
NDC7001C
NDC7001C
onsemi
MOSFET N/P-CH 60V SSOT6
NX3008NBKSH
NX3008NBKSH
Nexperia USA Inc.
MOSFET 2 N-CH 30V 350MA 6TSSOP
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
NTMFD5C674NLT1G
NTMFD5C674NLT1G
onsemi
T6 60V LL S08FL DS
STL64DN4F7AG
STL64DN4F7AG
STMicroelectronics
MOSFET N-CH 40V 40A POWERFLAT
NTJD4001NT1
NTJD4001NT1
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
AO3415B
AO3415B
Alpha & Omega Semiconductor Inc.
MOSFET 2P-CH 30V 6A 8-SOIC
FDC6333C-G
FDC6333C-G
onsemi
MOSFET N-CH 60V SUPERSOT6

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HC11PW,118
74HC11PW,118
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14TSSOP
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP