NX3008NBKV,115
  • Share:

Nexperia USA Inc. NX3008NBKV,115

Manufacturer No:
NX3008NBKV,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 400MA SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKV,115 is a dual N-channel Trench MOSFET produced by Nexperia. This component is designed for high-performance applications, particularly in automotive and industrial sectors. It features advanced Trench MOSFET technology, which ensures very fast switching times and low on-resistance. The device is packaged in a SOT666 surface mount package, making it suitable for a variety of modern electronic designs.

Key Specifications

Attribute Value
FET Type Dual N-Channel
No of Channels 2
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max [Rds(on)] 1.4Ω @ Vgs = 4.5V, 2.1Ω @ Vgs = 2.5V
Rated Power Dissipation 0.5W
Gate Charge [Qg] 0.52nC
Gate-Source Voltage-Max [Vgss] 8V
Drain Current [Id] 0.4A
Turn-on Delay Time 15ns
Turn-off Delay Time 69ns
Rise Time 11ns
Fall Time 19ns
Operating Temperature Range -55°C to +150°C
Gate Source Threshold [Vgs(th)] 0.9V
Input Capacitance [Ciss] 34pF
Package Style SOT666
Mounting Method Surface Mount

Key Features

  • Fast Switching Times: The NX3008NBKV,115 features very fast switching times, making it suitable for high-frequency applications.
  • Low Threshold Voltage: With a low gate-source threshold voltage of 0.9V, this MOSFET is easy to drive and efficient in operation.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and reduced on-resistance.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the device's reliability in harsh environments.
  • Compact Package: Packaged in a SOT666 surface mount package, which is compact and suitable for modern PCB designs.

Applications

The NX3008NBKV,115 is versatile and can be used in various applications across different industries, including:

  • Automotive Systems: Despite not being automotive qualified, it can be used in non-automotive specific applications within the automotive sector.
  • Industrial Control Systems: Suitable for use in industrial control systems due to its robust performance and reliability.
  • Power Management: Can be used in power management circuits requiring fast switching and low on-resistance.
  • Consumer Electronics: Applicable in consumer electronics where compact, efficient, and reliable MOSFETs are required.

Q & A

  1. What is the drain-to-source voltage rating of the NX3008NBKV,115?

    The drain-to-source voltage rating is 30V.

  2. How many channels does the NX3008NBKV,115 have?

    The NX3008NBKV,115 is a dual N-channel MOSFET, meaning it has 2 channels.

  3. What is the maximum drain current of the NX3008NBKV,115?

    The maximum drain current is 0.4A.

  4. What is the gate-source threshold voltage of the NX3008NBKV,115?

    The gate-source threshold voltage is 0.9V.

  5. What is the operating temperature range of the NX3008NBKV,115?

    The operating temperature range is -55°C to +150°C.

  6. Is the NX3008NBKV,115 automotive qualified?

    No, the NX3008NBKV,115 is not automotive qualified.

  7. What type of package does the NX3008NBKV,115 use?

    The NX3008NBKV,115 is packaged in a SOT666 surface mount package.

  8. What is the maximum gate-source voltage of the NX3008NBKV,115?

    The maximum gate-source voltage is 8V.

  9. What is the typical gate charge of the NX3008NBKV,115?

    The typical gate charge is 0.52nC.

  10. Does the NX3008NBKV,115 offer ESD protection?

    Yes, the NX3008NBKV,115 offers ESD protection up to 2 kV.

  11. How many devices are in a reel of NX3008NBKV,115?

    A reel of NX3008NBKV,115 contains 4000 devices.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:400mA
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 15V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
0 Remaining View Similar

In Stock

$0.44
1,065

Please send RFQ , we will respond immediately.

Same Series
SIHS90N65E-E3
SIHS90N65E-E3
MOSFET N-CH 650V 87A SUPER247

Similar Products

Part Number NX3008NBKV,115 NX3008PBKV,115 NX3008CBKV,115 NX3008NBKS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Active
FET Type 2 N-Channel (Dual) 2 P-Channel (Dual) N and P-Channel 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 400mA 220mA 400mA, 220mA 350mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V 0.72nC @ 4.5V 0.68nC @ 4.5V 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 15V 46pF @ 15V 50pF @ 15V 50pF @ 15V
Power - Max 500mW 500mW 500mW 445mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-666 SOT-666 SOT-666 6-TSSOP

Related Product By Categories

NTHC5513T1G
NTHC5513T1G
onsemi
MOSFET N/P-CH 20V CHIPFET
2N7002PS/ZLX
2N7002PS/ZLX
NXP Semiconductors
NEXPERIA 2N7002PS - 60 V, 320 MA
BSS84AKS,115
BSS84AKS,115
Nexperia USA Inc.
MOSFET 2P-CH 50V 0.16A 6TSSOP
CSD88599Q5DCT
CSD88599Q5DCT
Texas Instruments
MOSFET 2N-CH 60V 22-VSON-CLIP
FDMC7208S
FDMC7208S
onsemi
MOSFET 2N-CH 30V 12A/16A PWR33
FDPC5030SG
FDPC5030SG
onsemi
MOSFET 2N-CH 30V PWRCLIP56
2N7002KDW-HF
2N7002KDW-HF
Comchip Technology
MOSFET N-CH 60VDS 20VGS 340MA SO
NX3020NAKVYL
NX3020NAKVYL
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.2A SOT666
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
BSS8402DWQ-13
BSS8402DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
NTZD3154NT2G
NTZD3154NT2G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8

Related Product By Brand

BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
PCMF3USB30Z
PCMF3USB30Z
Nexperia USA Inc.
CMC 6LN SMD ESD
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74HC595PW,118
74HC595PW,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP