Overview
The PMGD780SN,115 is a dual N-channel enhancement mode field-effect transistor (FET) produced by Nexperia USA Inc. This component utilizes TrenchMOS technology and is packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for high efficiency and reliability, making it suitable for a wide range of applications.
Key Specifications
| FET Type | Drain-to-Source Voltage [Vdss] | Drain-Source On Resistance-Max | Rated Power Dissipation | Qg Gate Charge | Package Style | Mounting Method | Maximum Junction Temperature [Tj] | Maximum Drain Current [Id] |
|---|---|---|---|---|---|---|---|---|
| Dual N-Ch | 60 V | 0.92 Ω | 410 mW | 1.05 nC | SOT363 (SC-70-6, SC-88) | Surface Mount | 150 °C | 0.49 A |
Key Features
- Dual N-channel enhancement mode field-effect transistor
- Utilizes TrenchMOS technology for high efficiency
- Small SOT363 (SC-88) package, 40% smaller footprint than SOT23
- Low on-state resistance (Rds(on))
- Standard level threshold voltage
- Fast switching capabilities
- Surface-mounted package for easy integration
Applications
The PMGD780SN,115 is versatile and can be used in various applications across different industries, including:
- Automotive systems
- Industrial control systems
- Portable appliances and consumer electronics
- Power management and switching circuits
- Driver circuits
Q & A
- What is the maximum drain-to-source voltage of the PMGD780SN,115?
The maximum drain-to-source voltage is 60 V. - What is the package style of the PMGD780SN,115?
The package style is SOT363 (SC-70-6, SC-88). - What is the mounting method for this component?
The mounting method is surface mount. - What is the maximum drain current of the PMGD780SN,115?
The maximum drain current is 0.49 A. - What technology does the PMGD780SN,115 use?
The PMGD780SN,115 uses TrenchMOS technology. - What are some typical applications for the PMGD780SN,115?
Typical applications include automotive systems, industrial control systems, portable appliances, and power management circuits. - What is the rated power dissipation of the PMGD780SN,115?
The rated power dissipation is 410 mW. - What is the maximum junction temperature for the PMGD780SN,115?
The maximum junction temperature is 150 °C. - How many transistors are in the PMGD780SN,115 package?
The package contains two N-channel transistors. - Is the PMGD780SN,115 automotive qualified?
No, it is not specifically listed as automotive qualified in the provided sources.
