VEC2315-TL-W
  • Share:

onsemi VEC2315-TL-W

Manufacturer No:
VEC2315-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 60V 2.5A VEC8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The VEC2315-TL-W is a P-Channel Silicon MOSFET produced by ON Semiconductor. This device is designed using ON Semiconductor's trench technology, which minimizes gate charge and reduces on-resistance, making it suitable for general-purpose switching applications.

Key Specifications

Parameter Value Unit
Channel Type P-Channel
Drain-Source Voltage (Vds) -30 V
Gate-Source Voltage (Vgs) ±20 V
Continuous Drain Current (Id) -3.5 A
Pulse Drain Current (Idm) -7 A
On-Resistance (Rds(on)) 0.18 Ω
Gate Charge (Qg) 12 nC
Operating Temperature Range -55 to 150 °C

Key Features

  • Low on-resistance (Rds(on)) of 0.18 Ω, enhancing efficiency in switching applications.
  • Low gate charge (Qg) of 12 nC, reducing switching losses.
  • Trench technology for improved performance and reliability.
  • Suitable for general-purpose switching applications.
  • Compact TO-220 package for efficient heat dissipation.

Applications

  • General-purpose switching in various electronic devices.
  • Power management systems.
  • Motor control and drive systems.
  • Automotive and industrial control systems.
  • Consumer electronics requiring efficient power switching.

Q & A

  1. What is the VEC2315-TL-W MOSFET used for?

    The VEC2315-TL-W is used for general-purpose switching applications, particularly where low on-resistance and gate charge are critical.

  2. What is the maximum drain-source voltage (Vds) of the VEC2315-TL-W?

    The maximum drain-source voltage (Vds) is -30 V.

  3. What is the continuous drain current (Id) of the VEC2315-TL-W?

    The continuous drain current (Id) is -3.5 A.

  4. What is the on-resistance (Rds(on)) of the VEC2315-TL-W?

    The on-resistance (Rds(on)) is 0.18 Ω.

  5. Is the VEC2315-TL-W still in production?

    No, the VEC2315-TL-W has been discontinued by ON Semiconductor as part of their product portfolio renewal process.

  6. What are some potential replacement devices for the VEC2315-TL-W?

    ON Semiconductor recommends checking their product discontinuance notice for suggested replacement devices, such as those from Rohm Semiconductor.

  7. What is the operating temperature range of the VEC2315-TL-W?

    The operating temperature range is -55 to 150 °C.

  8. What technology is used in the VEC2315-TL-W MOSFET?

    The VEC2315-TL-W uses ON Semiconductor's trench technology.

  9. What package type is the VEC2315-TL-W available in?

    The VEC2315-TL-W is available in the TO-220 package.

  10. Where can I find detailed specifications for the VEC2315-TL-W?

    Detailed specifications can be found in the datasheet available on ON Semiconductor's website or through distributors like Farnell.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:2.5A
Rds On (Max) @ Id, Vgs:137mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:420pF @ 20V
Power - Max:1W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:SOT-28FL/VEC8
0 Remaining View Similar

In Stock

-
477

Please send RFQ , we will respond immediately.

Same Series
VEC2315-TL-H
VEC2315-TL-H
MOSFET 2P-CH 60V 2.5A VEC8

Similar Products

Part Number VEC2315-TL-W VEC2415-TL-W VEC2315-TL-H
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type 2 P-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate, 4V Drive Logic Level Gate, 4V Drive Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 2.5A 3A 2.5A
Rds On (Max) @ Id, Vgs 137mOhm @ 1.5A, 10V 80mOhm @ 1.5A, 10V 137mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V 10nC @ 10V 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 20V 505pF @ 20V 420pF @ 20V
Power - Max 1W 1W 1W
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package SOT-28FL/VEC8 SOT-28FL/VEC8 SOT-28FL/VEC8

Related Product By Categories

FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
BUK7K17-60EX
BUK7K17-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 30A 56LFPAK
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
NTMD6N02R2G
NTMD6N02R2G
onsemi
MOSFET 2N-CH 20V 3.92A 8SOIC
NX3008NBKV,115
NX3008NBKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 400MA SOT666
2N7002DWAQ-7
2N7002DWAQ-7
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 3K
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
NTZD3154NT1H
NTZD3154NT1H
onsemi
MOSFET 2N-CH 20V 540MA SOT563-6
NVMFD5852NLT1G
NVMFD5852NLT1G
onsemi
MOSFET 2N-CH 40V 15A SO8FL
2N7002DWKX-13
2N7002DWKX-13
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
FDC6333C-G
FDC6333C-G
onsemi
MOSFET N-CH 60V SUPERSOT6

Related Product By Brand

SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK