NTLUD3A50PZTAGHW
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onsemi NTLUD3A50PZTAGHW

Manufacturer No:
NTLUD3A50PZTAGHW
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 2.8A UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUD3A50PZTAGHW is a dual P-channel MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET features a 6-UDFN exposed pad package, which enhances thermal conduction and saves board space. It is RoHS compliant, Pb-free, and halogen-free, making it suitable for a wide range of modern electronic devices.

Key Specifications

Configuration 2 P-Channel (Dual)
Current 2.8A (Ta)
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 15V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package 6-UDFN Exposed Pad
Power 500mW (Ta)
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 4.5V
Supplier Device Package 6-UDFN (2x2)
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 1V @ 250µA

Key Features

  • Low on-resistance (Rds On) of 50mOhm @ 4A, 4.5V, ensuring efficient power management.
  • UDFN package with exposed drain pads for excellent thermal conduction and board space saving.
  • Logic level gate feature for easy integration with digital circuits.
  • RoHS compliant, Pb-free, and halogen-free, making it environmentally friendly.
  • Wide operating temperature range of -55°C to 150°C (TJ).

Applications

  • High side load switch.
  • Reverse current protection.
  • Battery switch.
  • Power management applications for portable products such as cell phones, portable media players (PMP), digital still cameras (DSC), GPS, and others.

Q & A

  1. What is the configuration of the NTLUD3A50PZTAGHW MOSFET?

    The NTLUD3A50PZTAGHW is configured as a dual P-channel MOSFET.

  2. What is the maximum continuous drain current of the NTLUD3A50PZTAGHW?

    The maximum continuous drain current is 2.8A (Ta).

  3. What is the drain to source voltage (Vdss) rating of the NTLUD3A50PZTAGHW?

    The drain to source voltage (Vdss) rating is 20V.

  4. What is the gate charge (Qg) of the NTLUD3A50PZTAGHW at Vgs = 4.5V?

    The gate charge (Qg) is 10.4nC at Vgs = 4.5V.

  5. What is the input capacitance (Ciss) of the NTLUD3A50PZTAGHW at Vds = 15V?

    The input capacitance (Ciss) is 920pF at Vds = 15V.

  6. What is the operating temperature range of the NTLUD3A50PZTAGHW?

    The operating temperature range is -55°C to 150°C (TJ).

  7. What package type is used for the NTLUD3A50PZTAGHW?

    The package type is 6-UDFN with an exposed pad.

  8. Is the NTLUD3A50PZTAGHW RoHS compliant?

    Yes, the NTLUD3A50PZTAGHW is RoHS compliant, Pb-free, and halogen-free.

  9. What are some typical applications of the NTLUD3A50PZTAGHW?

    Typical applications include high side load switch, reverse current protection, battery switch, and power management in portable products.

  10. What is the maximum power rating of the NTLUD3A50PZTAGHW?

    The maximum power rating is 500mW (Ta).

  11. What is the threshold voltage (Vgs(th)) of the NTLUD3A50PZTAGHW?

    The threshold voltage (Vgs(th)) is 1V at Id = 250µA.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:920pF @ 15V
Power - Max:500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:6-UDFN (2x2)
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