Overview
The NTJD1155LT1G is a dual P-Channel High Side Load Switch with Level-Shift Power MOSFET produced by ON Semiconductor. This device integrates both P and N-Channel MOSFETs in a single package, making it particularly suited for portable electronic equipment where low control signals, low battery voltages, and high load currents are required. The P-Channel device is designed as a load switch using ON Semiconductor's state-of-the-art trench technology, while the N-Channel functions as a level-shift to drive the P-Channel with internal ESD protection and the ability to be driven by logic signals as low as 1.5 V.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Input Voltage (VIN) | 1.8 to 8.0 | V |
| ON/OFF Voltage (VON/OFF) | 1.5 to 8.0 | V |
| Continuous Load Current (IL) | ±1.3 A (at TA = 25°C), ±0.9 A (at TA = 85°C) | A |
| Power Dissipation (PD) | 0.40 W (at TA = 25°C), 0.20 W (at TA = 85°C) | W |
| Pulsed Load Current (ILM) | ±3.9 A (tp = 10 μs) | A |
| Operating Junction and Storage Temperature (TJ, TSTG) | −55 to 150 | °C |
| Source Current (Body Diode) (IS) | −0.4 | A |
| Lead Temperature for Soldering Purposes | 260 | °C |
| Drain-to-Source On Resistance (RDS(on)) | 130 to 175 mΩ (at VGS = 4.5 V, IL = 1.2 A) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 0.4 to 1.0 | V |
Key Features
- Integrated High Side Load Switch with built-in Level Shift
- Extremely Low RDS(on) P-Channel Load Switch MOSFET
- Level Shift MOSFET is ESD Protected
- Low Profile, Small Footprint Package (SC-88, SC-70-6, SOT-363-6)
- Pb-Free and RoHS Compliant
- Operates on supply lines from 1.8 to 8.0 V
- Can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF
Applications
- Portable electronic equipment
- Cell Phones
- Digital Cameras
- PDAs
- Media Players
Q & A
- What is the NTJD1155LT1G used for?
The NTJD1155LT1G is used as a high side load switch with level shift in portable electronic equipment where low control signals, low battery voltages, and high load currents are required.
- What are the input voltage and ON/OFF voltage ranges for the NTJD1155LT1G?
The input voltage (VIN) range is from 1.8 to 8.0 V, and the ON/OFF voltage (VON/OFF) range is from 1.5 to 8.0 V.
- What is the maximum continuous load current for the NTJD1155LT1G?
The maximum continuous load current is ±1.3 A at TA = 25°C and ±0.9 A at TA = 85°C.
- Is the NTJD1155LT1G ESD protected?
- What package types are available for the NTJD1155LT1G?
The NTJD1155LT1G is available in SC-88, SC-70-6, and SOT-363-6 packages.
- Is the NTJD1155LT1G Pb-Free and RoHS compliant?
- What is the typical drain-to-source on resistance (RDS(on)) for the NTJD1155LT1G?
The typical drain-to-source on resistance (RDS(on)) is 130 to 175 mΩ at VGS = 4.5 V and IL = 1.2 A.
- What is the gate threshold voltage (VGS(th)) for the NTJD1155LT1G?
The gate threshold voltage (VGS(th)) is between 0.4 and 1.0 V.
- What are some common applications of the NTJD1155LT1G?
- What is the operating junction and storage temperature range for the NTJD1155LT1G?
The operating junction and storage temperature range is from −55 to 150 °C.
