English
2N7002KDW_R1_00001
  • Share:

Panjit International Inc. 2N7002KDW_R1_00001

Manufacturer No:
2N7002KDW_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
60V N-CHANNEL ENHANCEMENT MODE M
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KDW_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET produced by Panjit International Inc. This component is designed using advanced trench process technology, which ensures high density cell design for ultra-low on-resistance. It is packaged in the SOT-363 (SC-70-6) package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Drain Current) 115 mA
PD (Power Dissipation) 200 mW
RDS(ON) (On-Resistance) 3 Ω @ VGS = 10V, ID = 500mA Ω
VGS(TH) (Gate-Source Threshold Voltage) 2.5V @ ID = 250μA V
Package SOT-363 (SC-70-6)

Key Features

  • Advanced trench process technology for ultra-low on-resistance.
  • High density cell design.
  • Very low leakage current in off condition.
  • ESD protected.
  • Compact SOT-363 (SC-70-6) package for space-saving designs.

Applications

  • General purpose switching applications.
  • Low power DC-DC converters.
  • Power management circuits.
  • Automotive and industrial control systems.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KDW_R1_00001 MOSFET?

    The maximum drain-source voltage is 60V.

  2. What is the typical on-resistance of the 2N7002KDW_R1_00001?

    The typical on-resistance is 3 Ω at VGS = 10V and ID = 500mA.

  3. What package type is used for the 2N7002KDW_R1_00001?

    The component is packaged in SOT-363 (SC-70-6).

  4. Is the 2N7002KDW_R1_00001 ESD protected?
  5. What are some common applications for the 2N7002KDW_R1_00001?
  6. What is the maximum drain current of the 2N7002KDW_R1_00001?

    The maximum drain current is 115mA.

  7. What is the gate-source threshold voltage of the 2N7002KDW_R1_00001?

    The gate-source threshold voltage is typically 2.5V at ID = 250μA.

  8. Is the 2N7002KDW_R1_00001 suitable for high power applications?

    No, it is more suited for low to medium power applications due to its power dissipation limit of 200mW.

  9. Can the 2N7002KDW_R1_00001 be used in automotive applications?
  10. What is the typical leakage current in the off condition for the 2N7002KDW_R1_00001?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:35pF @ 25V
Power - Max:200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.25
2,797

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

PMGD280UN,115
PMGD280UN,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.87A 6TSSOP
EFC2J013NUZTDG
EFC2J013NUZTDG
onsemi
MOSFET N-CH 12V 17A WLCSP6 DUAL
FDMC8200S
FDMC8200S
onsemi
MOSFET 2N-CH 30V 6A/8.5A 8MLP
NDC7001C
NDC7001C
onsemi
MOSFET N/P-CH 60V SSOT6
FDS4935BZ
FDS4935BZ
onsemi
MOSFET 2P-CH 30V 6.9A 8SOIC
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
NVMFD5C462NT1G
NVMFD5C462NT1G
onsemi
40V 5.4 MOHM T8 S08FL DUA
PSMN4R8-100BSE,118
PSMN4R8-100BSE,118
Nexperia USA Inc.
N CHANNEL 100V 4.8 MOHM STANDAR
NX138BKSF
NX138BKSF
Nexperia USA Inc.
MOSFET 2 N-CH 60V 330MA SOT363
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
2N7002DW-13-G
2N7002DW-13-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
BSS138DW-7-F-79
BSS138DW-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

1.5KE120A_R2_00001
1.5KE120A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
BAT54CW_R1_00001
BAT54CW_R1_00001
Panjit International Inc.
SOT-323, SKY
BAS16TW-AU_R1_000A1
BAS16TW-AU_R1_000A1
Panjit International Inc.
SOT-363, SWITCHING
BAT54CTB_R1_00001
BAT54CTB_R1_00001
Panjit International Inc.
SOT-523, SKY
RB751S40-AU_R1_000A1
RB751S40-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BZX84C56TW_R1_00001
BZX84C56TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C43_R1_00001
BZX84C43_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B2V7_R1_00001
BZX84B2V7_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B18_R1_00001
BZX84B18_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B3V6W_R1_00001
BZX84B3V6W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1N5343B_R2_00001
1N5343B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
BC848B-AU_R1_000A1
BC848B-AU_R1_000A1
Panjit International Inc.
TRANS NPN 30V 0.1A SOT23