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2N7002KDW_R1_00001
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Panjit International Inc. 2N7002KDW_R1_00001

Manufacturer No:
2N7002KDW_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
60V N-CHANNEL ENHANCEMENT MODE M
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KDW_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET produced by Panjit International Inc. This component is designed using advanced trench process technology, which ensures high density cell design for ultra-low on-resistance. It is packaged in the SOT-363 (SC-70-6) package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Drain Current) 115 mA
PD (Power Dissipation) 200 mW
RDS(ON) (On-Resistance) 3 Ω @ VGS = 10V, ID = 500mA Ω
VGS(TH) (Gate-Source Threshold Voltage) 2.5V @ ID = 250μA V
Package SOT-363 (SC-70-6)

Key Features

  • Advanced trench process technology for ultra-low on-resistance.
  • High density cell design.
  • Very low leakage current in off condition.
  • ESD protected.
  • Compact SOT-363 (SC-70-6) package for space-saving designs.

Applications

  • General purpose switching applications.
  • Low power DC-DC converters.
  • Power management circuits.
  • Automotive and industrial control systems.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KDW_R1_00001 MOSFET?

    The maximum drain-source voltage is 60V.

  2. What is the typical on-resistance of the 2N7002KDW_R1_00001?

    The typical on-resistance is 3 Ω at VGS = 10V and ID = 500mA.

  3. What package type is used for the 2N7002KDW_R1_00001?

    The component is packaged in SOT-363 (SC-70-6).

  4. Is the 2N7002KDW_R1_00001 ESD protected?
  5. What are some common applications for the 2N7002KDW_R1_00001?
  6. What is the maximum drain current of the 2N7002KDW_R1_00001?

    The maximum drain current is 115mA.

  7. What is the gate-source threshold voltage of the 2N7002KDW_R1_00001?

    The gate-source threshold voltage is typically 2.5V at ID = 250μA.

  8. Is the 2N7002KDW_R1_00001 suitable for high power applications?

    No, it is more suited for low to medium power applications due to its power dissipation limit of 200mW.

  9. Can the 2N7002KDW_R1_00001 be used in automotive applications?
  10. What is the typical leakage current in the off condition for the 2N7002KDW_R1_00001?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:35pF @ 25V
Power - Max:200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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In Stock

$0.25
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