NTZD3154NT1H
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onsemi NTZD3154NT1H

Manufacturer No:
NTZD3154NT1H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 540MA SOT563-6
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTZD3154NT1H is a single N-Channel MOSFET produced by onsemi. This component is part of the small signal MOSFET family and is designed for various applications requiring low power consumption and high efficiency. The device is housed in a 6-pin SOT-563 package, which is Pb-free, halogen-free, and RoHS compliant. It was introduced on July 8, 2004, and is manufactured in China.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGS ±7.0 V
Continuous Drain Current (TA = 25°C) ID 540 mA
Power Dissipation (Steady State) PD 250 mW
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C
Gate Threshold Voltage VGS(TH) 0.45 - 1.0 V
Drain-to-Source On Resistance RDS(on) 0.4 - 0.55 Ω @ VGS = 4.5 V, ID = 540 mA
Input Capacitance CISS 80 - 150 pF @ VGS = 0 V, f = 1.0 MHz, VDS = 16 V
Turn-On Delay Time td(ON) 6.0 ns @ VGS = 4.5 V, VDD = 10 V, ID = 540 mA, RG = 10 Ω

Key Features

  • Low RDS(on) improving system efficiency
  • Low threshold voltage
  • Small footprint: 1.6 x 1.6 mm in SOT-563 package
  • ESD protected gate
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Load/Power switches
  • Power supply converter circuits
  • Battery management
  • Cell phones, digital cameras, PDAs, pagers, etc.

Q & A

  1. What is the maximum drain-to-source voltage of the NTZD3154NT1H?

    The maximum drain-to-source voltage is 20 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is 540 mA.

  3. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150°C.

  4. Is the NTZD3154NT1H RoHS compliant?
  5. What are the typical applications of the NTZD3154NT1H?
  6. What is the gate threshold voltage range?
  7. What is the maximum power dissipation at steady state?
  8. What is the input capacitance range? GS = 0 V, f = 1.0 MHz, and VDS = 16 V.

  9. What is the turn-on delay time? GS = 4.5 V, VDD = 10 V, ID = 540 mA, and RG = 10 Ω.

  10. Is the NTZD3154NT1H ESD protected?

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:540mA
Rds On (Max) @ Id, Vgs:550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:150pF @ 16V
Power - Max:250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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In Stock

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Same Series
NTZD3154NT1G
NTZD3154NT1G
MOSFET 2N-CH 20V 540MA SOT563
NTZD3154NT2G
NTZD3154NT2G
MOSFET 2N-CH 20V 0.54A SOT563
NTZD3154NT1H
NTZD3154NT1H
MOSFET 2N-CH 20V 540MA SOT563-6

Similar Products

Part Number NTZD3154NT1H NTZD3154NT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 540mA 540mA
Rds On (Max) @ Id, Vgs 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V 150pF @ 16V
Power - Max 250mW 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563

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