Overview
The NVMFD5C680NLWFT1G is a dual N-Channel power MOSFET produced by onsemi, designed for high-performance applications requiring low on-state resistance. This device is packaged in an 8-PowerTDFN (5x6) with dual flag (SO8FL-Dual) configuration, making it suitable for surface mount applications. It is lead-free and features wettable flanks, ensuring high reliability and ease of use in various electronic systems.
Key Specifications
Parameter | Value |
---|---|
V(BR)DSS Min (V) | 60 |
VGS Max (V) | ±20 |
VGS(th) Max (V) | 2.2 |
ID Max (A) | 26 (Tc), 7.5 (Ta) |
PD Max (W) | 19 (Tc), 3 (Ta) |
RDS(on) Max @ VGS = 4.5 V (mΩ) | 41 |
RDS(on) Max @ VGS = 10 V (mΩ) | 28 |
Qg Typ @ VGS = 4.5 V (nC) | 11.5 |
Qg Typ @ VGS = 10 V (nC) | 5 |
Ciss Typ (pF) | 350 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | +175 |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Package | 8-PowerTDFN, 5 Leads |
Mounting Style | SMD/SMT |
Key Features
- Dual N-Channel configuration for enhanced performance in high-power applications.
- Low on-state resistance (RDS(on)) of 28 mΩ at VGS = 10 V.
- High drain-source breakdown voltage (V(BR)DSS) of 60 V.
- High continuous drain current (ID) of up to 26 A (Tc) and 7.5 A (Ta).
- Surface mount package (8-PowerTDFN, 5 Leads) with dual flag (SO8FL-Dual) for easy integration.
- Lead-free and wettable flanks for high reliability.
- AEC-Q101 qualified, making it suitable for automotive applications.
Applications
The NVMFD5C680NLWFT1G is ideal for various high-power applications, including:
- Automotive systems: Suitable for use in automotive electronics due to its AEC-Q101 qualification.
- Power supplies: High efficiency and low on-state resistance make it suitable for power supply designs.
- Motor control: Used in motor control circuits due to its high current handling capability.
- Industrial control: Applicable in industrial control systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source breakdown voltage of the NVMFD5C680NLWFT1G?
The maximum drain-source breakdown voltage is 60 V. - What is the typical on-state resistance at VGS = 10 V?
The typical on-state resistance at VGS = 10 V is 28 mΩ. - What is the maximum continuous drain current?
The maximum continuous drain current is up to 26 A (Tc) and 7.5 A (Ta). - What is the package type of the NVMFD5C680NLWFT1G?
The package type is 8-PowerTDFN with 5 leads and dual flag (SO8FL-Dual). - Is the NVMFD5C680NLWFT1G lead-free?
Yes, the device is lead-free and features wettable flanks. - What is the operating temperature range of the NVMFD5C680NLWFT1G?
The operating temperature range is from -55°C to +175°C. - Is the NVMFD5C680NLWFT1G qualified for automotive use?
Yes, it is AEC-Q101 qualified. - What is the typical gate charge at VGS = 4.5 V?
The typical gate charge at VGS = 4.5 V is 11.5 nC. - What is the maximum power dissipation?
The maximum power dissipation is 19 W (Tc) and 3 W (Ta). - How many devices are packaged in a reel?
1500 devices are packaged in a reel.