Overview
The STL40DN3LLH5 is a dual N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ H5 technology. This device is designed to achieve very low on-state resistance, contributing to a Figure of Merit (FOM) that is among the best in its class. It is packaged in a PowerFLAT™ 5x6 double island configuration, which enhances thermal performance and reduces package size. The STL40DN3LLH5 is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Fet Type | Dual N-Ch | |
| No of Channels | 1 | |
| Drain-to-Source Voltage [Vdss] | 30 | V |
| Drain-Source On Resistance-Max [RDS(on)] | 0.018 | Ω |
| Rated Power Dissipation [PTOT] | 60 | W |
| Gate Charge [Qg] | 4.5 | nC |
| Gate-Source Voltage-Max [Vgss] | ±22 | V |
| Drain Current [ID] | 40 | A |
| Turn-on Delay Time [td(on)] | 4 | ns |
| Turn-off Delay Time [td(off)] | 13 | ns |
| Rise Time [tr] | 22 | ns |
| Fall Time [tf] | 2.8 | ns |
| Operating Temp Range [TJ] | -55°C to +175°C | |
| Gate Source Threshold [VGS(th)] | 1.5 | V |
| Input Capacitance [Ciss] | 475 | pF |
| Package Style | POWER FLAT | |
| Mounting Method | Surface Mount |
Key Features
- Extremely low on-resistance (RDS(on)) of 0.016 Ω typical, contributing to a high Figure of Merit (FOM).
- Very low switching gate charge (Qg) of 4.5 nC, reducing gate drive power losses.
- High avalanche ruggedness, enhancing reliability in demanding applications.
- Low gate drive power losses, improving overall system efficiency.
- AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
- Wettable flank package, facilitating automated optical inspection and improving manufacturing process reliability.
Applications
The STL40DN3LLH5 is primarily used in switching applications, particularly in the automotive sector due to its AEC-Q101 qualification. It is suitable for various high-power switching roles where low on-resistance, high avalanche ruggedness, and low gate drive power losses are critical. Other potential applications include industrial power supplies, motor control systems, and high-efficiency power conversion systems.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the STL40DN3LLH5? The maximum drain-to-source voltage (Vdss) is 30 V.
- What is the typical on-resistance (RDS(on)) of the STL40DN3LLH5? The typical on-resistance (RDS(on)) is 0.016 Ω.
- What is the maximum drain current (ID) of the STL40DN3LLH5? The maximum continuous drain current (ID) at 25°C is 40 A, and at 100°C it is 26 A.
- What is the gate-source voltage threshold (VGS(th)) of the STL40DN3LLH5? The gate-source voltage threshold (VGS(th)) is 1.5 V.
- What is the operating temperature range of the STL40DN3LLH5? The operating temperature range is -55°C to +175°C.
- Is the STL40DN3LLH5 AEC-Q101 qualified? Yes, the STL40DN3LLH5 is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the package style of the STL40DN3LLH5? The package style is PowerFLAT™ 5x6 double island.
- What are the key features of the STL40DN3LLH5? Key features include extremely low on-resistance, very low switching gate charge, high avalanche ruggedness, and low gate drive power losses.
- What are the typical applications of the STL40DN3LLH5? Typical applications include automotive switching, industrial power supplies, motor control systems, and high-efficiency power conversion systems.
- What is the turn-on delay time (td(on)) of the STL40DN3LLH5? The turn-on delay time (td(on)) is 4 ns.
