Overview
The PMCPB5530X,115 is a 20 V, complementary Trench MOSFET produced by Nexperia USA Inc. This dual MOSFET features both N and P channels, making it suitable for a variety of applications requiring high efficiency and reliability. The device is packaged in a small and leadless ultra-thin SMD plastic package (DFN2020-6 or SOT1118), which enhances thermal performance and reduces space requirements. With its fast switching capabilities and trench MOSFET technology, the PMCPB5530X,115 is an excellent choice for designs needing low on-resistance and high current handling.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS [max] | 20 | V |
| VGS [max] | 12 | V |
| RDSon [max] @ VGS = 4.5 V; @25°C | 34 | mΩ |
| RDSon [max] @ VGS = 2.5 V | 46 | mΩ |
| Tj [max] | 150 | °C |
| ID [max] | 5.3 | A |
| QGD [typ] | 1.5 | nC |
| QG(tot) [typ] @ VGS = 4.5 V | 14.4 | nC |
| Ptot [max] | 0.49 | W |
| VGSth [typ] | 0.65 | V |
| Automotive qualified | No | |
| Ciss [typ] | 660 | pF |
| Coss [typ] | 63 | pF |
Key Features
- Fast Switching: The PMCPB5530X,115 features very fast switching, making it ideal for high-frequency applications.
- Trench MOSFET Technology: Utilizes trench MOSFET technology for low on-resistance and high current handling.
- Compact Package: Packaged in a small and leadless ultra-thin SMD plastic package (DFN2020-6 or SOT1118), enhancing thermal performance and reducing space requirements.
- Exposed Drain Pad: Includes an exposed drain pad for improved thermal dissipation.
Applications
The PMCPB5530X,115 is versatile and can be used in various applications across different industries, including:
- Automotive: Suitable for automotive systems requiring high reliability and efficiency.
- Industrial: Used in industrial power management and control systems.
- Power Management: Ideal for power management in computing, consumer electronics, and mobile devices.
- Wearables and IoT Devices: Due to its compact size and low power consumption, it is also suitable for wearables and IoT devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the PMCPB5530X,115?
The maximum drain-source voltage (VDS) is 20 V.
- What is the maximum gate-source voltage (VGS) of the PMCPB5530X,115?
The maximum gate-source voltage (VGS) is 12 V.
- What is the on-resistance (RDSon) of the PMCPB5530X,115 at VGS = 4.5 V?
The on-resistance (RDSon) at VGS = 4.5 V is 34 mΩ.
- What is the maximum junction temperature (Tj) of the PMCPB5530X,115?
The maximum junction temperature (Tj) is 150°C.
- What is the maximum drain current (ID) of the PMCPB5530X,115?
The maximum drain current (ID) is 5.3 A.
- Is the PMCPB5530X,115 automotive qualified?
No, the PMCPB5530X,115 is not automotive qualified.
- What is the typical gate-source threshold voltage (VGSth) of the PMCPB5530X,115?
The typical gate-source threshold voltage (VGSth) is 0.65 V.
- What is the package type of the PMCPB5530X,115?
The package type is DFN2020-6 or SOT1118.
- What are the typical input capacitance (Ciss) and output capacitance (Coss) values of the PMCPB5530X,115?
The typical input capacitance (Ciss) is 660 pF, and the typical output capacitance (Coss) is 63 pF.
- Where can I purchase the PMCPB5530X,115?
The PMCPB5530X,115 can be purchased from various distributors such as Newark, Mouser Electronics, Digi-Key, and others listed on the Nexperia website.
- What are some application notes available for the PMCPB5530X,115?
Application notes such as 'Power MOSFET single-shot and repetitive avalanche ruggedness rating' and 'LFPAK MOSFET thermal design guide' are available on the Nexperia website.
