Overview
The NTJD4105CT2G is a small signal, complementary MOSFET produced by onsemi. This device is packaged in the SC-88 (SOT-363) package, which is a compact 2 x 2 mm footprint, making it ideal for space-constrained applications. The NTJD4105CT2G features both N-channel and P-channel MOSFETs, providing a complementary pair that can be used in a variety of switching and power management circuits.
Key Specifications
| Parameter | N-Channel | P-Channel | Unit |
|---|---|---|---|
| Drain-to-Source Voltage (VDSS) | 20 | -8.0 | V |
| Gate-to-Source Voltage (VGS) | ±12 | ±8.0 | V |
| Operating Junction and Storage Temperature (TJ, TSTG) | -55 to 150 | -55 to 150 | °C |
| Source Current (IS) | 0.63 | -0.775 | A |
| Lead Temperature for Soldering Purposes | 260 | 260 | °C |
| Junction-to-Ambient Thermal Resistance (RθJA) | 400 (Typ), 460 (Max) | 400 (Typ), 460 (Max) | °C/W |
| Junction-to-Lead Thermal Resistance (RθJL) | 194 (Typ), 226 (Max) | 194 (Typ), 226 (Max) | °C/W |
| Drain-to-Source On Resistance (RDS(on)) | 0.29 Ω @ VGS = 4.5 V, ID = 0.63 A | 0.22 Ω @ VGS = -4.5 V, ID = -0.57 A | Ω |
| Gate Threshold Voltage (VGS(TH)) | 0.6 to 1.5 | -0.45 to -1.0 | V |
Key Features
- Complementary N and P Channel Device for balanced performance.
- Leading -8.0 V Trench for low RDS(on) performance, enhancing switching efficiency.
- ESD Protected Gate with an ESD Rating of Class 1, ensuring robustness against electrostatic discharge.
- Compact SC-88 package with a small footprint of 2 x 2 mm, suitable for space-constrained designs.
- Pb-Free packages available, adhering to environmental standards.
Applications
- DC-DC Conversion: Suitable for power conversion applications due to its low RDS(on) and high efficiency.
- Load/Power Switching: Ideal for switching applications requiring low on-resistance and high current handling.
- Single or Dual Cell Li-Ion Battery Supplied Devices: Used in battery-powered devices such as cell phones, MP3 players, digital cameras, and PDAs.
Q & A
- What is the NTJD4105CT2G MOSFET package type? The NTJD4105CT2G is packaged in the SC-88 (SOT-363) package.
- What are the drain-to-source voltage ratings for the N and P channels? The N-channel has a VDSS of 20 V, and the P-channel has a VDSS of -8.0 V.
- What is the operating junction and storage temperature range for this MOSFET? The operating junction and storage temperature range is -55 to 150 °C.
- What is the maximum source current for the N and P channels? The maximum source current for the N-channel is 0.63 A, and for the P-channel, it is -0.775 A.
- Is the NTJD4105CT2G ESD protected? Yes, the NTJD4105CT2G has ESD protection with an ESD Rating of Class 1.
- What are some common applications of the NTJD4105CT2G? Common applications include DC-DC conversion, load/power switching, and single or dual cell Li-Ion battery supplied devices.
- What is the thermal resistance of the NTJD4105CT2G? The junction-to-ambient thermal resistance (RθJA) is 400 °C/W (Typ) and 460 °C/W (Max), and the junction-to-lead thermal resistance (RθJL) is 194 °C/W (Typ) and 226 °C/W (Max).
- Is the NTJD4105CT2G Pb-Free? Yes, Pb-Free packages are available for the NTJD4105CT2G.
- What is the gate threshold voltage range for the N and P channels? The gate threshold voltage range for the N-channel is 0.6 to 1.5 V, and for the P-channel, it is -0.45 to -1.0 V.
- What is the typical drain-to-source on resistance for the N and P channels? The typical RDS(on) for the N-channel is 0.29 Ω @ VGS = 4.5 V, ID = 0.63 A, and for the P-channel, it is 0.22 Ω @ VGS = -4.5 V, ID = -0.57 A.
