Overview
The FDG6303N-F169 is a dual N-Channel logic level enhancement mode field effect transistor (MOSFET) produced by onsemi. This device is part of onsemi's high cell density DMOS technology, designed to minimize on-state resistance and optimize performance in low voltage applications. It serves as a replacement for bipolar digital transistors and small signal MOSFETs, making it versatile for various electronic circuits.
Key Specifications
| Parameter | Description |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current | 500mA (Ta), 1.5A (Peak) |
| Drain to Source Voltage (Vdss) | 25V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Power | 300mW (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Supplier Device Package | SC-88 (SC-70-6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Key Features
- Low on-state resistance (Rds(ON) = 0.45Ω @ Vgs = 4.5V and Rds(ON) = 0.60Ω @ Vgs = 2.7V)
- Very low level gate drive requirements, allowing direct operation in 3V circuits (Vgs(th) < 1.5V)
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model)
- Compact industry standard SC70-6 surface mount package
- Pb-free and RoHS compliant
Applications
The FDG6303N-F169 is designed for low voltage applications and can be used as a replacement for bipolar digital transistors and small signal MOSFETs. It is suitable for various electronic circuits, including but not limited to:
- Digital logic circuits
- Power management systems
- Switching applications
- General-purpose switching and amplification
Q & A
- What is the configuration of the FDG6303N-F169 MOSFET?
The FDG6303N-F169 is a dual N-Channel MOSFET.
- What is the maximum drain to source voltage (Vdss) of the FDG6303N-F169?
The maximum drain to source voltage (Vdss) is 25V.
- What is the continuous drain current (Id) of the FDG6303N-F169?
The continuous drain current (Id) is 500mA, with a peak current of 1.5A.
- What is the on-state resistance (Rds(ON)) of the FDG6303N-F169?
The on-state resistance (Rds(ON)) is 450mΩ @ 500mA, 4.5V and 600mΩ @ 500mA, 2.7V.
- What is the operating temperature range of the FDG6303N-F169?
The operating temperature range is -55°C to 150°C (TJ).
- What package types are available for the FDG6303N-F169?
The FDG6303N-F169 is available in 6-TSSOP, SC-88, and SOT-363 packages.
- Is the FDG6303N-F169 RoHS compliant?
Yes, the FDG6303N-F169 is Pb-free and RoHS compliant.
- What is the gate-source threshold voltage (Vgs(th)) of the FDG6303N-F169?
The gate-source threshold voltage (Vgs(th)) is 1.5V @ 250µA.
- What is the maximum power dissipation of the FDG6303N-F169?
The maximum power dissipation is 300mW (Ta).
- Does the FDG6303N-F169 have ESD protection?
Yes, it has a gate-source Zener for ESD ruggedness (>6 kV Human Body Model).
